This product complies with the RoHS Directive (EU
2002/95/EC).
Photo IC
PNA4701M
Photodiode with amplifier functions
For infrared remote control systems
0.3 max.
Unit: mm
7.0
±0.2
Not soldered 1.5
1.5max.
(3.5)
(2.25)
5.25
±0.3
Features
Center frequency f
O
: 36.7 kHz
Operating supply voltage V
CC
: 3.3 V(typ.)
Adoption of visible light cutoff resin
M
ain
Di
sc te
on na
tin nc
ue e/
d
(2.3)
(0.8)
8.0
±0.2
(5.2)
R2.25
±0.1
(5
°)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Operating supply voltage
Power dissipation
2.0
±0.15
3-1.5
±0.2
3-0.5
-0.15
+0.25
22.0 min.
V
CC
P
D
T
opr
T
stg
T
sol
– 0.5 to +5
200
Operating ambient temperature
Storage temperature
Soldering temperature
*
–15 to +70
260
–40 to +100
Note) *: Less than 5 s
Electrical Characteristics
T
a
= 25°C±3°C, V
CC
= 3.3 V
Parameter
*2
Symbol
V
CC
V
OL
I
CC
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V
mW
°C
°C
°C
1
2
3
(2-2.54)
Symbol
Rating
Unit
(5
°)
1.0
±0.15
3-0.45
-0.15
+0.25
1: V
O
2: GND
3: V
CC
Conditions
Min
2.7
Typ
3.3
0.1
3.3
0.8
Max
3.6
0.3
1.0
(5
°)
0.3 max.
Operating supply voltage
Output voltage low-level
Supply current
tin
ue
Output voltage high-level
V
OH
di
L ≤ 7 m, I
OL
= 400 µA
No signal condition, I
OH
= –2 µA
2.86
0.6
7.0
Center frequency
Ma
int
en
an
Pulse width high-level
*1
ce
Pulse width low-level
*1
/D
isc
Maximum reception distance
on
L
max
T
WL
f
O
T
WH
L = 0.1 m to 7 m, 16 pulse
200
400
36.7
Carrier frequency
: f
O
Pl
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: Burst wave form Figure 1
*2: Constant wave form Figure 2
Carrier frequency
: f
O
400
µs
400
µs
Figure 1
Figure 2
Publication date : August 2007
SHE00052BED
(5
°
)
Unit
V
V
V
mA
m
ms
kHz
600
1
This product complies with the RoHS Directive (EU
2002/95/EC).
PNA4701M
Block Diagram
V
CC
(100 kΩ)
Amplifier
AGC
BPF
Demodulator
Comparator
R
L
V
O
P
D
Controler
Integrator
Panasonic Transmitter Specifications
LED transmitter unit
V
O
55 mV
1. The output of the LED transmitter unit is adjusted so that the output standard receiver unit, V
O
may be 55 mV when transmitting
waves (duty = 50%) are output from the transmitter unit, where the sensitivity to infrared emitters (SIR) of PNZ323B is 0.53 mA when
the irradiance H is 12.45 mW/cm
2
.
Ma
int
en
an
ce
/D
isc
(The maximum detection distance is measured in the darkness without disturbing noises.)
on
are transmitted with the output of the transmitter unit corresponded to the maximum detection distance in the system above.
tin
2. The maximum detection distance of this specification is guaranteed by T
WH
and T
WL
being within the limits when constant 16 pulses
2
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Standard receiver unit
10 kΩ
PNZ323B
10 V
20 cm
10
µF
10 kΩ
V
O
10 kΩ
GND
SHE00052BED
M
ain
Di
sc te
on na
tin nc
ue e/
d
GND
ue
di
This product complies with the RoHS Directive (EU
2002/95/EC).
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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/ ion
.
Ma
int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
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