STGB10NB60S
STGP10NB60S
16 A, 600 V, low drop IGBT
Features
■
■
Low on-voltage drop (V
CE(sat)
)
High current capability
TAB
TAB
Applications
■
■
■
Light dimmer
Static relays
Motor drive
1
3
3
2
1
TO-220
D
2
PAK
Description
This IGBT utilizes the advanced PowerMESH™
process featuring extremely low on-state voltage
drop in low-frequency working conditions (up to 1
kHz).
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking
GB10NB60S
GP10NB60S
Package
D
2
PAK
TO-220
Packaging
Tape and reel
Tube
Order codes
STGB10NB60ST4
STGP10NB60S
September 2011
Doc ID 10985 Rev 4
1/19
www.st.com
19
Contents
STGB10NB60S, STGP10NB60S
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
6
Test circuits
............................................... 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
Doc ID 10985 Rev 4
STGB10NB60S, STGP10NB60S
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
CES
I
C (1)
I
C (1)
I
CL (2)
I
CP (3)
V
GE
P
TOT
T
j
1.
Absolute maximum ratings
Parameter
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at
T
C
= 25 °C
Continuous collector current at
T
C
= 100 °C
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
Total dissipation at T
C
= 25 °C
Operating junction temperature
Value
600
29
16
20
80
± 20
80
– 55 to 150
Unit
V
A
A
A
A
V
W
°C
Calculated according to the iterative formula
T
j
(
max
)
–
T
C
I
C
(
T
C
)
= -------------------------------------------------------------------------------------------------------
R
thj
–
c
×
V
CE
(
sat
) (
max
)
(
T
j
(
max
)
,
I
C
(
T
C
) )
2. Vclamp = 80% of V
CES
, T
j
=150 °C, R
G
=1kΩ, V
GE
=15 V
3.
Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3.
Symbol
R
thj-case
R
thj-amb
Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
1.56
62.5
Unit
°C/W
°C/W
Doc ID 10985 Rev 4
3/19
Electrical characteristics
STGB10NB60S, STGP10NB60S
2
Electrical characteristics
(T
j
=25 °C unless otherwise specified)
Table 4.
Symbol
V
(BR)CES
V
(BR)ECS
I
GES
I
CES
V
GE(th)
Static
Parameter
Test conditions
Min.
600
20
±100
10
100
2.5
1.15
1.35
1.25
5
S
5
Typ. Max. Unit
V
V
nA
µA
µA
V
Collector-emitter breakdown
I
C
= 250 µA
voltage (V
GE
= 0)
Emitter-collector breakdown
I
C
= 1 mA
voltage (V
GE
= 0)
Gate-emitter leakage
current (V
CE
= 0)
Collector cut-off current
(V
GE
= 0)
Gate threshold voltage
V
GE
= ±20 V
V
CE
= 600 V
V
CE
= 600 V, T
j
= 125 °C
V
CE
= V
GE
, I
C
= 250 µA
V
GE
= 15 V, I
C
= 5 A
V
GE
= 15 V, I
C
= 10 A
V
GE
= 15 V, I
C
= 10 A,
T
j
= 125 °C
V
CE
= 15 V
,
I
C
= 10 A
V
CE(sat)
Collector-emitter saturation
voltage
1.75
V
g
fs (1)
Forward transconductance
1. Pulsed: Pulse duration =
300
µs, duty cycle 1.5%
Table 5.
Symbol
C
ies
C
oes
C
res
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Test conditions
Min.
Typ.
610
65
12
Max.
Unit
pF
pF
pF
V
CE
= 25 V, f = 1 MHz, V
GE
= 0
-
-
Q
g
V
CE
= 400 V, I
C
= 10 A,
V
GE
= 15 V
(see Figure 17)
-
33
-
nC
4/19
Doc ID 10985 Rev 4
STGB10NB60S, STGP10NB60S
Electrical characteristics
Table 6.
Symbol
t
d(on)
t
r
(di/dt)
on
t
r
(V
off
)
t
d
(
off
)
t
f
t
r
(V
off
)
t
d
(
off
)
t
f
Switching on/off (inductive load)
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Test conditions
V
CC
= 480 V, I
C
= 10 A
R
G
= 1 kΩ, V
GE
= 15 V
(see Figure 16)
V
CC
= 480 V, I
C
= 10 A
R
G
= 1 kΩ, V
GE
= 15 V
(see Figure 16)
V
CC
= 480 V, I
C
= 10 A
R
G
= 1 kΩ, V
GE
= 15 V,
T
j
= 125 °C
(see Figure 16)
Min.
Typ.
0.7
0.46
8
2.2
1.2
1.2
3.8
1.2
1.9
Max. Unit
µs
µs
A/µs
µs
-
-
-
-
-
-
µs
Table 7.
Symbol
Eon
(1)
E
off (2)
E
ts
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test conditions
V
CC
= 480 V, I
C
= 10 A
R
G
= 1 kΩ, V
GE
= 15 V
(see Figure 16)
V
CC
= 480 V, I
C
= 10 A
R
G
= 1 kΩ, V
GE
= 15 V,
T
j
= 125 °C
(see Figure 16)
Min.
Typ. Max.
0.6
5
5.6
Unit
mJ
mJ
mJ
-
-
E
off (2)
Turn-off switching losses
-
8
-
mJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package
with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same
temperature (25°C and 125°C).
2. Turn-off losses include also the tail of the collector current.
Doc ID 10985 Rev 4
5/19
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