STGP3NB60K - STGD3NB60K
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
N-CHANNEL 3A - 600V - TO-220/DPAK/D
2
PAK
PowerMESH™ IGBT
TYPE
STGP3NB60K
STGD3NB60K
STGP3NB60KD
STGP3NB60KDFP
STGB3NB60KD
s
s
s
s
s
s
s
V
CES
600
600
600
600
600
V
V
V
V
V
V
CE(sat)
(Typ) @125°C
<
<
<
<
<
2V
2V
2V
2V
2V
I
C
@125°C
3A
3A
3A
3A
3A
3
1
2
1
3
2
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP (V
cesat
)
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
HIGH FREQUENCY OPERATION
SHORT CIRCUIT RATED
TO-220
TO-220FP
3
3
1
1
D
2
PAK
DPAK
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH
™
IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control applications with short cir-
cuit withstand capability.
Std. Version
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
SMPS AND PFC IN BOTH HARD SWITCHING
AND RESONANT TOPOLOGIES
“D” Version
ORDERING INFORMATION
SALES TYPE
STGP3NB60K
STGD3NB60KT4
STGP3NB60KD
STGP3NB60KDFP
STGB3NB60KDT4
MARKING
GP3NB60K
GD3NB60K
GP3NB60KD
GP3NB60KDFP
GB3NB60KD
PACKAGE
TO-220
DPAK
TO-220
TO-220FP
D
2
PAK
PACKAGING
TUBE
TAPE & REEL
TUBE
TUBE
TAPE & REEL
May 2002
1/14
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TO-220
D
2
PAK
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
(
n
)
I
f
(1)
I
fm
(1)
P
TOT
V
ISO
T
stg
T
j
Collector-Emitter Voltage (V
GS
= 0)
Emitter-Collector Voltage
Gate-Emitter Voltage
Collector Current (continuos) at T
C
= 25°C
Collector Current (continuos) at T
C
= 100°C
Collector Current (pulsed)
Forward Current
Forward Current Pulsed
Total Dissipation at T
C
= 25°C
Derating Factor
Insulation Withstand Voltage A.C.
Storage Temperature
Max. Operating Junction Temperature
--
68
6
3
24
3
24
25
0.75
2500
– 55 to 150
150
--
60
Value
TO-220FP
600
20
±20
6
3
24
6
3
24
DPAK
V
V
V
A
A
A
A
A
W
W/°C
V
°C
Unit
(
n
) Pulse width limited by safe opera ting area
(1) For “D” ve rsion only
THERMAL DATA
TO-220
D
2
PAK
Rthj-case
Rthj-amb
Rthc-h
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-heatsink Typ
1.8
62.5
0.5
TO-220FP
5
DPAK
2.1
100
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TCASE = 25
°C
UNLESS OTHERWISE SPECIFIED)
MAIN PARAMETERS
Symbol
V
BR(CES)
I
CES
I
GES
V
GE(th)
V
CE(sat)
Parameter
Collector-Emitter Breakdown
Voltage
Collector cut-off
(V
GE
= 0)
Gate-Emitter Leakage
Current (V
CE
= 0)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Test Conditions
I
C
= 250
µA,
V
GE
= 0
V
CE
= Max Rating, T
C
= 25
°C
V
CE
= Max Rating, T
C
= 125
°C
V
GE
=
±20V
, V
CE
= 0
V
CE
= V
GE
, I
C
= 250µA
V
GE
= 15V, I
C
= 3 A
V
GE
= 15V, I
C
= 3 A, Tj =125°C
5
2.3
1.9
Min.
600
50
500
±100
7
2.8
Typ.
Max.
Unit
V
µA
µA
nA
V
V
V
2/14
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
SWITCHING PARAMETERS
Symbol
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
tscw
t
d(on)
t
r
(di/dt)
on
Eon
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(**)
E
ts
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(**)
E
ts
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Short Circuit Withstand Time
Turn-on Delay Time
Rise Time
Turn-on Current Slope
Turn-on Switching Losses
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
Test Condition s
V
CE
= 25V, Ic = 3 A
V
CE
= 25V, f = 1 MHz, V
GE
= 0
Min.
Typ.
2.4
218
33
5.8
14
3.3
7.5
10
14
5
520
30
122
26.5
33
100
58
85
210
66
100
120
165
195
18
Max.
Unit
S
pF
pF
pF
nC
nC
nC
µs
ns
ns
A/µs
µ
J
ns
ns
ns
ns
µ
J
µ
J
ns
ns
ns
ns
µ
J
µ
J
V
CE
= 480V, I
C
= 3 A,
V
GE
= 15V
V
ce
= 0.5 V
BR(CES)
, V
GE
=15V,
Tj = 125°C , R
G
= 10
Ω
V
CC
= 480 V, I
C
= 3 A
R
G
= 10Ω, V
GE
= 15 V
V
CC
= 480 V, I
C
= 3 A R
G
=10Ω
V
GE
= 15 V,Tj = 125°C
V
cc
= 480 V, I
C
= 3 A,
R
GE
= 10
Ω
, V
GE
= 15 V
Tj = 25
°C
V
cc
= 480 V, I
C
= 3 A,
R
GE
= 10
Ω
, V
GE
= 15 V
Tj = 125
°C
COLLECTOR-EMITTER DIODE (“D” VERSION)
Symbol
V
f
t
rr
Q
rr
I
rrm
Parameter
Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Test Condition s
I
f
= 1.5 A
I
f
= 1.5 A, Tj = 125
°C
I
f
= 3 A ,V
R
= 35 V,
Tj =125°C, di/dt = 100A/µs
Min.
Typ.
1.31
0.95
45
70
2.7
Max.
1.8
Unit
V
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
3/14
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
Output Characteristics
Transfer Characteristics
Transconductance
Normalized Collector-Emitter On Voltage vs Temp.
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
4/14
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
Emitter-collector Diode Characteristics
5/14
微控制器 MCU
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