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1N5619GPHE3/54

产品描述DIODE GEN PURP 600V 1A DO204AC
产品类别分立半导体    二极管   
文件大小75KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

1N5619GPHE3/54概述

DIODE GEN PURP 600V 1A DO204AC

1N5619GPHE3/54规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码DO-15
包装说明O-PALF-W2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性FREE WHEELING DIODE, HIGH RELIABILITY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.2 V
JEDEC-95代码DO-204AC
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值正向电流50 A
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压600 V
最大反向恢复时间0.25 µs
表面贴装NO
端子面层Matte Tin (Sn)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

下载PDF文档
1N5615GP, 1N5617GP, 1N5619GP, 1N5621GP, 1N5623GP
www.vishay.com
Vishay General Semiconductor
Glass Passivated Junction Fast Switching Plastic Rectifier
FEATURES
• Superectifier structure for high reliability condition
SUPERECTIFIER
®
• Cavity-free glass-passivated junction
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DO-204AC (DO-15)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
I
R
V
F
T
J
max.
Package
Diode variation
1.0 A
200 V, 400 V, 600 V, 800 V, 1000 V
50 A
150 ns, 250 ns, 300 ns, 500 ns
0.5 μA
1.2 V
175 °C
DO-204AC (DO-15)
Single die
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
MECHANICAL DATA
Case:
DO-204AC, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 55 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Operating junction and
storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
1N5615GP
200
140
200
1N5617GP
400
280
400
1N5619GP
600
420
600
1.0
50
-65 to +175
1N5621GP
800
560
800
1N5623GP
1000
700
1000
UNIT
V
V
A
A
A
°C
Revision: 07-Nov-16
Document Number: 88522
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
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