2GB, 4GB (x72, DR) 244-Pin DDR2 VLP Mini-RDIMM
Features
DDR2 SDRAM VLP Mini-RDIMM
MT18HVS25672(P)K – 2GB
MT18HVS51272(P)K – 4GB
For component data sheets, refer to Micron’s Web site:
www.micron.com
Features
• 244-pin, very low profile mini registered dual in-line
memory module (VLP Mini-RDIMM)
• Fast data transfer rates: PC2-4200, PC2-5300,
or PC2-6400
• 2GB (256 Meg x 8), 4GB (512 Meg x 8)
• Supports ECC error detection and correction
• V
DD
= V
DD
Q = +1.8V
• V
DDSPD
= +1.7V to +3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
operation
• Supports redundant output strobe (RDQS/RDQS#)
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
t
CK
• Programmable burst lengths (BL) 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank, TwinDie
TM
(2COB) DRAM devices
Figure 1:
244-Pin VLP Mini-RDIMM
PCB height: 18.2mm (0.72in)
Options
• Parity
• Operating temperature
1
–
Commercial (0°C
≤
T
A
≤
+70°C)
–
Industrial (–40°C
≤
T
A
≤
+85°C)
• Package
–
244-pin DIMM (Pb-free)
• Frequency/CAS latency
2
–
2.5ns @ CL = 5 (DDR2-800)
3
–
3.0ns @ CL = 5 (DDR2-667)
–
3.75ns @ CL = 4 (DDR2-533)
Marking
P
None
I
Y
-80E
-667
-53E
Notes: 1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
3. Not available in 4GB module density.
Table 1:
Speed
Grade
-80E
-667
-53E
Key Timing Parameters
Data Rate (MT/s)
Industry Nomenclature
PC2-6400
PC2-5300
PC2-4200
CL = 5
800
667
–
CL = 4
533
533
533
CL = 3
–
400
400
t
RCD
t
RP
t
RC
(ns)
12.5
15
15
(ns)
12.5
15
15
(ns)
55
55
55
PDF: 09005aef8281e0a3/Source: 09005aef8281d7ea
HVS18C256_512x72PK.fm - Rev. A 8/07 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
2GB, 4GB (x72, DR) 244-Pin DDR2 VLP Mini-RDIMM
Features
Table 2:
Parameter
Refresh count
Row address
Device bank address
Device page size per bank
Device configuration
Column address
Module rank address
Addressing
2GB
8K
16K (A0–A13)
8 (BA0, BA1)
1KB
2Gb TwinDie (256 Meg x 8)
1K (A0–A9)
2 (S0#, S1#)
4GB
8K
32K (A0–A14)
8 (BA0–BA2)
1KB
4Gb TwinDie (512 Meg x 8)
1K (A0–A9)
2 (S0#, S1#)
Table 3:
Part Numbers and Timing Parameters – 2GB Modules
Base device: MT47H256M8THN,
1
2Gb TwinDie DDR2 SDRAM
Module
Density
2GB
2GB
2GB
Module
Bandwidth
6.4 GB/s
5.3 GB/s
4.3 GB/s
Memory Clock/
Data Rate
2.5ns/800 MT/s
3.0ns/667 MT/s
3.75ns/533 MT/s
Clock Cycles
(CL-
t
RCD-
t
RP)
5-5-5
5-5-5
4-4-4
Part Number
2
MT18HVS25672(P)KY-80E__
MT18HVS25672(P)KY-667__
MT18HVS25672(P)KY-53E__
Configuration
256 Meg x 8
256 Meg x 8
256 Meg x 8
Table 4:
Part Numbers and Timing Parameters – 4GB Modules
Base device: MT47H512M8THM,
1
4Gb TwinDie DDR2 SDRAM
Module
Density
4GB
4GB
Module
Bandwidth
5.3 GB/s
4.3 GB/s
Memory Clock/
Data Rate
3.0ns/667 MT/s
3.75ns/533 MT/s
Clock Cycles
(CL-
t
RCD-
t
RP)
5-5-5
4-4-4
Part Number
2
MT18HVS51272(P)KY-667__
MT18HVS51272(P)KY-53E__
Notes:
Configuration
512 Meg x 8
512 Meg x 8
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes.
Example: MT18HVS51272PKY-53EA1.
PDF: 09005aef8281e0a3/Source: 09005aef8281d7ea
HVS18C256_512x72PK.fm - Rev. A 8/07 EN
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
2GB, 4GB (x72, DR) 244-Pin DDR2 VLP Mini-RDIMM
Pin Assignments and Descriptions
Pin Assignments and Descriptions
Table 5:
Pin Assignments
244-Pin VLP Mini-RDIMM Front
Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
V
REF
V
SS
DQ0
DQ1
V
SS
DQS0#
DQS0
V
SS
DQ2
DQ3
V
SS
DQ8
DQ9
V
SS
DQS1#
DQS1
V
SS
RESET#
NC
V
SS
DQ10
DQ11
V
SS
DQ16
DQ17
V
SS
DQS2#
DQS2
V
SS
DQ18
DQ19
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
1
57
58
59
60
61
62
V
SS
DQ24
DQ25
V
SS
DQS3#
DQS3
V
SS
DQ26
DQ27
V
SS
CB0
CB1
V
SS
DQS8#
DQS8
V
SS
CB2
CB3
V
SS
NC
V
DD
Q
CKE0
V
DD
BA2
NF/
E
RR
_O
UT
V
DD
Q
A11
A7
V
DD
A5
A4
Notes:
1.
2.
3.
4.
63
64
65
66
67
68
2
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
V
DD
Q
A2
V
DD
V
SS
V
SS
NF/
P
AR
_I
N
V
DD
A10
BA0
V
DD
WE#
V
DD
Q
CAS#
V
DD
Q
S1#
ODT1
V
DD
Q
NC
V
SS
DQ32
DQ33
V
SS
DQS4#
DQS4
V
SS
DQ34
DQ35
V
SS
DQ40
DQ41
V
SS
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
DQS5#
DQS5
V
SS
DQ42
DQ43
V
SS
DQ48
DQ49
V
SS
SA2
NC
V
SS
DQS6#
DQS6
V
SS
DQ50
DQ51
V
SS
DQ56
DQ57
V
SS
DQS7#
DQS7
V
SS
DQ58
DQ59
V
SS
SA0
SA1
Pin Symbol
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
V
SS
DQ4
DQ5
V
SS
DM0/
RDQS0
NF/
RDQS0#
V
SS
DQ6
DQ7
V
SS
DQ12
DQ13
V
SS
DM1/
RDQS1
NF/
RDQS1#
V
SS
NC
NC
V
SS
DQ14
DQ15
V
SS
DQ20
DQ21
V
SS
DM2/
RDQS2
NF/
RDQS2#
V
SS
DQ22
DQ23
V
SS
244-Pin VLP Mini-RDIMM Back
Pin
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
3
177
4
178
179
180
181
182
183
184
Symbol Pin Symbol Pin Symbol
DQ28
DQ29
V
SS
DM3/
RDQS3
NF/
RDQS3#
V
SS
DQ30
DQ31
V
SS
CB4
CB5
V
SS
185
186
187
188
189
190
191
192
193
194
195
196
A3
A1
V
DD
CK0
CK0#
V
DD
A0
BA1
V
DD
RAS#
V
DD
Q
S0#
V
DD
Q
ODT0
A13
V
DD
NC
V
SS
DQ36
DQ37
V
SS
NF/
RDQS5#
217
V
SS
218 DQ46
219 DQ47
220
221
222
223
224
225
226
227
V
SS
DQ52
216
DM8/ 197
RDQS8
NF/
198
RDQS8#
V
SS
199
CB6
CB7
V
SS
NC
V
DD
Q
CKE1
V
DD
200
201
202
203
204
205
206
DQ53
V
SS
NC
NC
V
SS
DM6/
RDQS6
228
NF/
RDQS6#
229
V
SS
230
DQ54
231
232
233
234
235
236
DM4/
RDQS4
NF/A15 207
NF/
RDQS4#
NF/A14 208
V
SS
239
V
DD
Q 209 DQ38 240
A12
A9
V
DD
A8
A6
V
DD
Q
210
211
212
213
214
215
DQ39
V
SS
DQ44
DQ45
V
SS
DM5/
RDQS5
241
DQ55
V
SS
DQ60
DQ61
V
SS
DM7/
RDQS7
237
NF/
RDQS7#
238
V
SS
DQ62
DQ63
V
SS
SDA
SCL
V
DDSPD
242
243
244
Pin 56 is NF for non-parity and E
RR
_O
UT
for parity.
Pin 68 is NF for non-parity and P
AR
_I
N
for parity.
Pin 176 is NF for non-parity and A15 for parity.
Pin 177 is NF for 2GB, non-parity and A14 for 2GB, parity; 4GB, non-parity and parity.
PDF: 09005aef8281e0a3/Source: 09005aef8281d7ea
HVS18C256_512x72PK.fm - Rev. A 8/07 EN
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
2GB, 4GB (x72, DR) 244-Pin DDR2 VLP Mini-RDIMM
Pin Assignments and Descriptions
Figure 2:
.
Symbol
A0–A15
Pin Descriptions
Type
Input
(SSTL_18)
Description
Address inputs:
Provide the row address for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one
location out of the memory array in the respective bank. A10 sampled during a
PRECHARGE command determines whether the PRECHARGE applies to one device
bank (A10 LOW, device bank selected by BA0–BA1/BA2) or all device banks (A10
HIGH). The address inputs also provide the op-code during a LM command.
A0–A13 (2GB) and A0–A14 (4GB). A0–A15 are connected for parity.
Bank address inputs:
BA0–BA1/BA2 define to which device bank an ACTIVE, READ,
WRITE, or PRECHARGE command is being applied. BA0–BA1/BA2 define which mode
register, including MR, EMR, EMR(2), and EMR(3), is loaded during the LOAD MODE
command.
Clock:
CK and CK# are differential clock inputs. All address and control input signals
are sampled on the crossing of the positive edge of CK and the negative edge of CK#.
Output data (DQs and DQS/DQS#) is referenced to the crossings of CK and CK#.
Clock enable:
CKE (registered HIGH) activates and CKE (registered LOW) deactivates
clocking circuitry on the DDR2 SDRAM.
On-die termination:
ODT (registered HIGH) enables termination resistance internal
to the DDR2 SDRAM. When enabled ODT is only applied to each of the following pins:
DQ, DQS, DQS#, RDQS, RDQS#, CB, and DM. The ODT input will be ignored if disabled
via the LOAD MODE (LM) command.
Parity bit for the address and control bus. The non-parity version is not used.
Command inputs:
RAS#, CAS#, and WE# (along with S#) define the command being
entered.
Asynchronously forces all registered outputs LOW when RESET# is LOW. This signal can
be used during power up to ensure that CKE is LOW and DQs are High-Z.
Chip select:
S# enables (registered LOW) and disables (registered HIGH) the command
decoder. All commands are masked when S# is registered HIGH. S# provides for
external rank selection on systems with multiple ranks. S# is considered part of the
command code.
Presence-detect address inputs:
These pins are used to configure the presence-
detect device.
Serial clock for presence-detect:
SCL is used to synchronize the presence-detect
data transfer to and from the module.
Check bits.
Data input mask:
DM is an input mask signal for write data. Input data is masked
when DM is sampled HIGH along with that input data during a WRITE access. DM is
sampled on both edges of DQS. Although DM pins are input-only, the DM loading is
designed to match that of DQ and DQS pins. If RDQS is enabled, RDQS0#–RDQS8# are
used only during the READ command. If RDQS is disabled, RDQS0–RDQS8 become
DM0–DM8 and RDQS0#–RDQS8 are not used.
Data input/output:
Bidirectional data bus.
Data strobe:
Output with read data, input with write data for source synchronous
operation. Edge-aligned with read data, center-aligned with write data. DQS# is only
used when differential data strobe mode is enabled via the LM command.
Serial presence-detect data:
SDA is a bidirectional pin used to transfer addresses
and data into and out of the presence-detect portion of the module.
Parity error found on the address and control bus. The non-parity version is not used.
BA0–BA2
Input
(SSTL_18)
CK0, CK0#
Input
(SSTL_18)
Input
(SSTL_18)
Input
(SSTL_18)
CKE0, CKE1#
ODT0, ODT1
P
AR
_I
N
RAS#, CAS#, WE#
RESET#
S0#, S1#
Input
(SSTL_18)
Input
(SSTL_18)
Input
(LVCMOS)
Input
(SSTL_18)
SA0–SA2
SCL
CB0–CB7
DM0–DM8
(RDQS0–RDQS8)
Input
(SSTL_18)
Input
(SSTL_18)
I/O
(SSTL_18)
I/O
(SSTL_18)
DQ0–DQ63
DQS0–DQS8,
DQS0#–DQS8#
SDA
E
RR
_O
UT
I/O
(SSTL_18)
I/O
(SSTL_18)
I/O
(SSTL_18)
Output
(open drain)
PDF: 09005aef8281e0a3/Source: 09005aef8281d7ea
HVS18C256_512x72PK.fm - Rev. A 8/07 EN
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
2GB, 4GB (x72, DR) 244-Pin DDR2 VLP Mini-RDIMM
Pin Assignments and Descriptions
Figure 2:
Symbol
V
DD
/V
DD
Q
V
DDSPD
V
REF
V
SS
NC
NF
Pin Descriptions (continued)
Type
Supply
Supply
Supply
Supply
–
–
Description
Power supply:
1.8V ±0.1V.
Serial EEPROM positive power supply:
+1.7V to +3.6V.
SSTL_18 reference voltage (V
DD
/2).
Ground.
No connect:
These pins are not connected on the module.
No function:
Connected within the module but provides no functionality.
PDF: 09005aef8281e0a3/Source: 09005aef8281d7ea
HVS18C256_512x72PK.fm - Rev. A 8/07 EN
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
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