PD - 95951A
Features
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IRFR1010ZPbF
IRFU1010ZPbF
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
V
DSS
= 55V
R
DS(on)
= 7.5mΩ
G
S
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
I
D
= 42A
D-Pak
IRFR1010ZPbF
I-Pak
IRFU1010ZPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
I
DM
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Max.
91
65
42
360
140
0.9
± 20
Units
A
P
D
@T
C
= 25°C Power Dissipation
V
GS
Linear Derating Factor
Gate-to-Source Voltage
W
W/°C
V
mJ
A
mJ
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Avalanche Current
d
Ã
h
110
220
See Fig.12a, 12b, 15, 16
-55 to + 175
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
y
y
j
Parameter
Typ.
Max.
1.11
40
110
Units
°C/W
j
ij
–––
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
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1
09/16/10
IRFR/U1010ZPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
55
–––
–––
2.0
31
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.051
5.8
–––
–––
–––
–––
–––
–––
63
17
23
17
76
42
48
4.5
7.5
2840
470
250
1630
360
560
–––
–––
7.5
4.0
–––
20
250
200
-200
95
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
nA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 42A
V
S
µA
V
DS
= 25V, I
D
= 42A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 42A
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 42A
R
G
= 7.6
Ω
V
GS
= 10V
V
DS
= V
GS
, I
D
= 100µA
e
e
e
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
G
D
S
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
24
20
42
A
360
1.3
36
30
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 42A, V
GS
= 0V
T
J
= 25°C, I
F
= 42A, V
DD
= 28V
di/dt = 100A/µs
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFR/U1010ZPbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
BOTTOM
10
10
4.5V
4.5V
1
0.1
1
≤60µs
PULSE WIDTH
Tj = 25°C
≤60µs
PULSE WIDTH
1
Tj = 175°C
0.1
1
10
100
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
120
Gfs , Forward Transconductance (S)
ID, Drain-to-Source Current
(Α)
100
80
60
40
20
0
0
20
40
60
TJ = 25°C
100
TJ = 175°C
10
TJ = 175°C
1
TJ = 25°C
VDS = 25V
VDS = 10V
380µs PULSE WIDTH
80
100
0.1
2
4
≤60µs
PULSE WIDTH
6
8
10
VGS, Gate-to-Source Voltage (V)
ID,Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
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3
IRFR/U1010ZPbF
5000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
VGS, Gate-to-Source Voltage (V)
ID= 42A
VDS = 44V
VDS= 28V
VDS= 11V
4000
16
C, Capacitance(pF)
3000
Ciss
12
2000
8
1000
Coss
Crss
4
0
10
100
0
1
0
20
40
60
80
100
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
10000
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
TJ = 175°C
10.00
1000
100
100µsec
1msec
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
VDS , Drain-toSource Voltage (V)
10
1.00
TJ = 25°C
VGS = 0V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
1
0.10
0.1
DC
100
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFR/U1010ZPbF
100
LIMITED BY PACKAGE
80
ID , Drain Current (A)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
ID = 42A
2.0
VGS = 10V
60
1.5
40
20
1.0
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
10
Thermal Response ( ZthJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
Ri (°C/W)
τi
(sec)
0.3854 0.000251
0.3138
0.4102
0.001092
0.015307
τ
1
τ
2
0.01
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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