SMP3V3 thru SMP36A
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
eSMP
®
Series
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Available in uni-directional
• 400 W peak pulse power capability with a
10/1000 μs waveform
• Excellent clamping capability
• Very fast response time
DO-220AA (SMP)
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
BR
uni-directional
V
WM
P
PPM
I
FSM
T
J
max.
Polarity
Package
4.10 V to 44.2 V
3.3 V to 36 V
400 W
40 A
150 °C
Uni-directional
DO-220AA (SMP)
MECHANICAL DATA
Case:
DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
per
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)
(1)(2)
Peak pulse current with a 10/1000 μs waveform
(1)
Peak forward surge current 10 ms single half sine-wave
(2)
Maximum instantaneous forward voltage at 25 A
(3)
SYMBOL
P
PPM
I
PPM
I
FSM
V
F
T
J
, T
STG
VALUE
400
See table next page
40
2.5
- 55 to + 150
UNIT
W
A
A
V
°C
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(3)
Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 11-Dec-12
Document Number: 88481
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMP3V3 thru SMP36A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE TYPE
DEVICE
MARKING
CODE
AC
AE
AG
AK
AM
AN
AR
AZ
BE
BG
BK
BM
BP
BR
BT
BV
BX
BZ
CE
CG
CK
CM
CP
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
SMP3V3
SMP5.0A
SMP6.0A
SMP6.5A
SMP7.0A
SMP7.5A
SMP8.0A
SMP11A
SMP12A
SMP13A
SMP14A
SMP15A
SMP16A
SMP17A
SMP18A
SMP20A
SMP22A
SMP24A
SMP26A
SMP28A
SMP30A
SMP33A
SMP36A
4.10
6.40
6.67
7.22
7.78
8.33
8.89
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
MAX.
5.10
7.07
7.37
7.98
8.60
9.21
9.83
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
TEST
CURRENT
I
T
(mA)
1.0
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE V
WM
(V)
3.3
5.0
6.0
6.5
7.0
7.5
8.0
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
(3)
200
150
600
100
50
50
20
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(2)
54.8
43.5
38.8
35.7
33.3
31.0
29.4
22.0
20.1
18.6
17.2
16.4
15.4
14.5
13.7
12.3
11.3
10.3
9.5
8.8
8.3
7.5
6.9
MAXIMUM
CLAMPING
VOLTAGE AT
I
PPM
V
C
(V)
7.3
9.2
10.3
11.2
12.0
12.9
13.6
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
Notes
(1)
V
BR
measured after I
T
applied for 300 μs, I
T
= square wave pulse or equivalent
(2)
Surge current waveform per fig. 3 and derate per fig. 2
(3)
All terms and symbols are consistent with ANSI/IEEE C62.35
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to lead
(1)
(2)
SYMBOL
R
JL
R
JA
LIMIT
50
250
UNIT
°C/W
°C/W
Typical thermal resistance, junction to ambient
(1)
Notes
Mounted on PCB with 5.0 mm x 5.0 mm copper pad areas attached to each terminal
(2)
Mounted on minimum recommended pad layout
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMP3V3-M3/84A
SMP3V3-M3/85A
SMP11A-M3/84A
SMP11A-M3/85A
UNIT WEIGHT (g)
0.024
0.024
0.024
0.024
PREFERRED PACKAGE CODE
84A
85A
84A
85A
BASE QUANTITY
3000
10 000
3000
10 000
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 11-Dec-12
Document Number: 88481
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMP3V3 thru SMP36A
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Vishay General Semiconductor
10
10 000
C
J
- Junction Capacitance (pF)
P
PPM
- Peak Pulse Power (kW)
Non-Repetitive
Pulse
Waveform shown in Fig. 3
T
A
= 25 °C
1000
Measured at
Stand-Off
Voltage, V
WM
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
10
1
10
Measured at
Zero Bias
1
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0.1
0.1
1
10
100
1000
10 000
100
t
d
- Pulse Width (µs)
Fig. 1 - Peak Pulse Power Rating Curve
V
WM
- Reverse Stand-Off
Voltage
(V)
Fig. 4 - Typical Junction Capacitance
Peak Pulse Power (P
PP
) of Current (I
PP
)
Derating in Percentage (%)
Transient Thermal Impedance (°C/W)
100
1000
75
100
50
10
25
1
0
0
25
50
75
100
125
150
175
200
0.1
0.001
0.01
0.1
1
10
100
1000
T
J
- Initial Temperature (°C)
Fig. 2 - Pulse Derating Curve
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
150
I
PPM
- Peak Pulse Current, % I
RSM
t
r
= 10 µs
Peak
Value
I
PPM
100
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
Half
Value
- I
PP
I
PPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 3 - Pulse Waveform
Revision: 11-Dec-12
Document Number: 88481
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMP3V3 thru SMP36A
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-220AA (SMP)
Cathode Band
0.012 (0.30) REF.
Vishay General Semiconductor
0.086 (2.18)
0.074 (1.88)
0.053 (1.35)
0.041 (1.05)
0.036 (0.91)
0.024 (0.61)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.103 (2.60)
0.087 (2.20)
0.032 (0.80)
0.016 (0.40)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30)
0.000 (0.00)
0.100
(2.54)
0.018 (0.45)
0.006 (0.15)
0.105
(2.67)
0.025
(0.635)
0.030
(0.762)
0.050
(1.27)
Revision: 11-Dec-12
Document Number: 88481
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12
1
Document Number: 91000