PESD18VV1BBSF
Rev. 1 — 20 December 2017
Very symmetrical bidirectional ESD protection diode
Product data sheet
1
Product profile
1.1 General description
Very symmetrical bidirectional ElectroStatic Discharge (ESD) protection diode. This
device is housed in a DSN0603-2 (SOD962) leadless ultra small Surface-Mounted
Device (SMD) package designed to protect one signal line from the damage caused by
ESD and other transients.
1.2 Features and benefits
•
•
•
•
•
•
•
Bidirectional ESD protection of one line
Extremely symmetrical layout
Very low diode capacitance C
d
= 5.5 pF max.
Low clamping to protect sensitive I/Os
Extremely low inductance protection path to ground
ESD protection up to ± 25 kV contact according to IEC 61000-4-2
Ultra small SMD package
1.3 Applications
•
•
•
•
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
1.4 Quick reference data
Table 1. Quick reference data
T
amb
= 25 °C unless otherwise specified.
Symbol
V
RWM
C
d
Parameter
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
Conditions
Min
-18
-
Typ
-
4.1
Max
18
5.5
Unit
V
pF
Nexperia
Very symmetrical bidirectional ESD protection diode
PESD18VV1BBSF
2
Pin
1
2
Pinning information
Symbol
K
K
Description
cathode (diode 1)
cathode (diode 2)
1
2
Table 2. Pinning
Simplified outline
Graphic symbol
1
sym045
2
Transparent
top view
3
Ordering information
Package
Name
Description
leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm
Version
SOD962
DSN0603-2
Table 3. Ordering information
Type number
PESD18VV1BBSF
4
Marking
Marking code
b
Table 4. Marking
Type number
PESD18VV1BBSF
PESD18VV1BBSF
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2017
2 / 11
Nexperia
Very symmetrical bidirectional ESD protection diode
PESD18VV1BBSF
5
Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
-40
-65
Max
150
125
150
Unit
°C
°C
°C
Table 6. Maximum ratings
Symbol
V
ESD
Parameter
electrostatic discharge voltage
Conditions
IEC 61000-4-2 (contact discharge)
[1]
Min
-25
Max
25
Unit
kV
[1] Device stressed with ten non-repetitive ESD pulses.
Table 7. ESD standards compliance
Standard
IEC 61000-4-2; level 4 (ESD)
Conditions
> 8 kV (contact)
120
I
PP
(%)
80
100 % I
PP
; 8 µs
001aaa630
001aaa631
I
PP
100 %
90 %
e
-t
50 % I
PP
; 20 µs
40
10 %
0
0
10
20
30
40
t (µs)
t
r
= 0.6 ns to 1 ns
30 ns
60 ns
t
Figure 1. 8/20 µs pulse waveform according to IEC
61000-4-5
Figure 2. ESD pulse waveform according to IEC
61000-4-2
PESD18VV1BBSF
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2017
3 / 11
Nexperia
Very symmetrical bidirectional ESD protection diode
PESD18VV1BBSF
6
Characteristics
Table 8. Characteristics
T
amb
= 25 °C unless otherwise specified.
Symbol
V
RWM
C
d
I
PPM
I
RM
r
dyn
r
dyn
V
CL
Parameter
reverse standoff
voltage
diode capacitance
rated peak pulse
current
reverse leakage
current
dynamic resistance
dynamic resistance
clamping voltage
f = 1 MHz; V
R
= 0 V
t
p
= 8/20 µs
V
RWM
= 18 V
I
R
= 10 A
I
R
= -10 A
I
PP
= 3 A; t
p
= 8/20 μs
[1]
[1]
Conditions
Min
-18
-
-
-
-
-
-
Typ
-
4.1
-
1
0.37
0.37
22.8
Max
18
5.5
3
100
-
-
26.5
Unit
V
pF
A
nA
Ω
Ω
V
[1] Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse; ANS/IESD STM5.1-2008.
S21
(dB)
0
-2
-4
-6
-8
aaa-027529
8
C
d
(pF)
6
aaa-027530
-10
-12
-14
-16
-18
-20
10
7
10
8
10
9
10
10
4
2
f (Hz)
0
-20
-10
0
10
V (V)
20
Figure 3. Insertion loss; typical values
Figure 4. Capacitance as a function of reverse standoff
voltage; typical values
PESD18VV1BBSF
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2017
4 / 11
Nexperia
Very symmetrical bidirectional ESD protection diode
aaa-027531
aaa-027532
PESD18VV1BBSF
I
(A)
30
25
20
15
10
I
(A)
0
-5
-10
-15
-20
5
0
-25
-30
-30
0
5
10
15
20
25
V (V)
30
-25
-20
-15
-10
-5
V (V)
0
Figure 5. Dynamic resistance with positive clamping;
typical values. Transmission Line Pulse (TLP) t
p
= 100
ns; rise time = 1 ns
Figure 6. Dynamic resistance with negative clamping;
typical values. Transmission Line Pulse (TLP) t
p
= 100
ns; rise time = 1 ns
The device uses an advanced clamping structure showing a negative dynamic
resistance. This snap-back behaviour strongly reduces the clamping voltage to the
system behind the ESD protection during an ESD event. Do not connect unlimited DC
current sources to the data lines to avoid keeping the ESD protection device in snap-
back state after exceeding breakdown voltage (due to an ESD pulse for instance).
3
aaa-027533
I
PP
(A)
2.5
I
PP
(A)
-0.5
0
aaa-027534
2
1.5
1
0.5
0
-1
-1.5
-2
-2.5
-3
-30
0
5
10
15
20
25
30
V
CL
(V)
-25
-20
-15
-10
-5
0
V
CL
(V)
Figure 7. Dynamic resistance with positive clamping;
Figure 8. Dynamic resistance with negative clamping;
typical values, IEC 61000-4-5; t
p
= 8/20 µs; positive pulse typical values; IEC 61000-4-5; t
p
= 8/20 µs; positive pulse
PESD18VV1BBSF
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2017
5 / 11
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