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SI3134KL-TP

产品描述N-CHANNEL MOSFET, SOT-883 PACKAG
产品类别半导体    分立半导体   
文件大小661KB,共3页
制造商Micro_Commercial_Co
标准
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SI3134KL-TP概述

N-CHANNEL MOSFET, SOT-883 PACKAG

SI3134KL-TP规格参数

参数名称属性值
安装类型表面贴装
供应商器件封装SOT-883
封装/外壳SC-101,SOT-883

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MCC
Micro Commercial Components
R
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
SI3134KL
Features
Lead Free Product is Acquired
Halogen
free available upon request by adding suffix "-HF"
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Equivalent
Operated at Low Logic Level Gate Drive
N-Channel Switch with Low RDS(on)
Surface Mount Package
N-Channel MOSFET
Circuit
Marking :34
Parameter
Drain-source Voltage
Gate-source Voltage
Continuous Drain Current
(1)
Pulsed Drain Current
Total Power Dissipation
(2)
Operating Junction Temperature
Value
20
f12
0.75
1.8
100
-55 to +150
Unit
V
V
A
A
mW
Absolute maximum ratings @ 25
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
D
SOT-883
A
B
C
N
E
L
T
STG
T
L
R
thJA
Storage Temperature
Lead Temperature for Soldering Purposes
Thermal Resistance fromJunction to Ambient
Min
-55 to +150
260
1250
Typ
---
---
---
---
---
---
---
---
1.6
79
13
9
6.7
17.3
4.8
---
Max
---
M
M
/W
Units
Vdc
Vdc
INCHES
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
STATIC PARAMETERS
V
(BR)DSS
Drain-Source Breakdown Voltage
(V
GS
=0Vdc, I
D
=250
µAdc)
V
GS(th)
Gate-Threshold Voltage
(V
DS
=V
GS
, I
D
=250uAdc)
I
GSS
Gate-body Leakage
(V
DS
=0Vdc, V
GS
=f10Vdc)
I
DSS
Zero Gate Voltage Drain Current
(V
DS
=20Vdc, V
GS
=0Vdc)
V
SD
Diode Forward Voltage
(I
S
=0.15A,V
GS
=0V
r
DS(on)
Drain-Source On-Resistance
(V
GS
=4.5Vdc, I
D
=0.65Adc)
(V
GS
=2.5Vdc, I
D
=0.55Adc)
(V
GS
=1.8Vdc, I
D
=0.45Adc)
Forward transconductance
(V
DS
=10Vdc, I
D
=0.8Adc)
DYNAMIC PARAMETERS
(4)
Input Capacitance
C
iss
V
DS
=16Vdc,
C
OSS
Output Capacitance
V
GS
=0Vdc
C
rSS
Reverse Transfer
f=1MHz
capacitance
g
FS
20
0.35
---
---
---
---
---
---
---
---
---
---
F G
K
1.
GATE
J
H
2.
SOURCE
3.
DRAIN
1.1
f
20
1
1.2
0.38
0.45
0.80
---
120
20
15
---
---
DIMENSIONS
MM
MIN
MAX
uA
uAdc
Vdc
DIM
MIN
MAX
NOTE
S
A
B
C
D
E
F
G
H
J
K
L
M
N
0.018
0.022
0.000
0.004
0.037
0.041
0.022
0.026
0.018REF.
0.018REF.
0.011
0.015
0.004
0.008
0.025REF.
0.012
0.016
0.008
0.012
0.002REF.
0.011
0.015
0.450
0.550
0.010
0.100
0.950
1.050
0.550
0.650
0.450REF.
0.450REF.
0.270
0.370
0.100
0.200
0.635REF.
0.300
0.400
0.200
0.300
0.050REF.
0.270
0.370
pF
SWITCHING PARAMETERS
(4)
t
d(on)
t
d(off)
t
r
Turn-on Time
(3)
Turn-off
Rise
Time
(3)
Time
(3)
V
GS
=4.5V,
V
DS
=10V,
---
---
I
D
=500mA
R
GEN
=10Ω
---
ns
ns
t
r
---
7.4
---
Fall Time
(3)
Notes :
1.Surface mounted on FR4 board using the minimum recommended pad size.
2.Pulse est : Pulse width=300μs, duty cycle≤2%.
3.
Switching
characteristics are independent of operating junction temperatures.
4. Graranted y design,not subject to producting.
Revision: A
www.mccsemi.com
1
of
3
2016/01/30

 
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