Datasheet> 器件分类 > 分立半导体> 晶体管> PMBFJ309,215

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PMBFJ309,215: 产品描述JFET N-CH 25V 250MW SOT23; 产品类别分立半导体晶体管; 文件大小121KB，共15页; 制造商NXP(恩智浦); 官网地址https://www.nxp.com; 标准

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PMBFJ309,215概述

JFET N-CH 25V 250MW SOT23

PMBFJ309,215规格参数

参数名称	属性值
Brand Name	NXP Semiconductor
是否Rohs认证	符合
厂商名称	NXP(恩智浦)
零件包装代码	TO-236
包装说明	SMALL OUTLINE, R-PDSO-G3
针数	3
制造商包装代码	SOT23
Reach Compliance Code	compliant
其他特性	LOW NOISE
配置	SINGLE
最小漏源击穿电压	25 V
FET 技术	JUNCTION
最大反馈电容 (Crss)	2.5 pF
最高频带	VERY HIGH FREQUENCY BAND
JEDEC-95代码	TO-236AB
JESD-30 代码	R-PDSO-G3
JESD-609代码	e3
湿度敏感等级	1
元件数量	1
端子数量	3
工作模式	DEPLETION MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	0.25 W
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin (Sn)
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON

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PMBFJ308; PMBFJ309;

PMBFJ310

N-channel silicon field-effect transistors

Rev. 4 — 20 September 2011

Product data sheet

1. Product profile

1.1 General description

Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits



Low noise



Interchangeability of drain and source connections



High gain.

1.3 Applications



AM input stage in car radios



VHF amplifiers



Oscillators and mixers.

1.4 Quick reference data

Table 1.

GSoff

Quick reference data

Conditions

Min

= 10 V; I

= 1

A

= 10 V; I

= 1

A

= 10 V; I

= 1

A

1

2

Typ

Max Unit

25

drain-source voltage

gate-source cut-off voltage

PMBFJ308

PMBFJ309

PMBFJ310

6.5

4

6.5

Symbol Parameter

PMBFJ309,215相似产品对比

	PMBFJ309,215	PMBFJ310,215	PMBFJ308,215	PMBFJ309T/R	PMBFJ310T/R	PMBFJ309-T	PMBFJ308-T	PMBFJ310-T	PMBFJ308T/R
描述	JFET N-CH 25V 250MW SOT23	JFET N-CH 25V 250MW SOT23	JFET N-CH 25V 250MW SOT23	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal
厂商名称	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)
零件包装代码	TO-236	TO-236	TO-236	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23
包装说明	SMALL OUTLINE, R-PDSO-G3	PLASTIC PACKAGE-3	SMALL OUTLINE, R-PDSO-G3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	PLASTIC PACKAGE-3
针数	3	3	3	3	3	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	unknown	unknown	unknown	unknown	unknown	unknow
其他特性	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	25 V	25 V	25 V	25 V	25 V	25 V	25 V	25 V	25 V
FET 技术	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION
最大反馈电容 (Crss)	2.5 pF	2.5 pF	2.5 pF	2.5 pF	2.5 pF	2.5 pF	2.5 pF	2.5 pF	2.5 pF
最高频带	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JEDEC-95代码	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
元件数量	1	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3	3
工作模式	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
是否Rohs认证	符合	符合	符合	符合	符合	-	-	-	符合
JESD-609代码	e3	e3	e3	e3	e3	-	-	-	e3
峰值回流温度（摄氏度）	260	260	260	260	260	-	-	-	260
最大功率耗散 (Abs)	0.25 W	0.25 W	0.25 W	0.25 W	0.25 W	-	-	-	0.25 W
端子面层	Tin (Sn)	Tin (Sn)	Tin (Sn)	TIN	Matte Tin (Sn)	-	-	-	TIN
处于峰值回流温度下的最长时间	NOT SPECIFIED	40	NOT SPECIFIED	40	40	-	-	-	40

PMBFJ309,215

PMBFJ309,215概述

PMBFJ309,215规格参数

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PMBFJ309,215相似产品对比

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