PESD5V0X1ULD
Ultra low capacitance unidirectional ESD protection diode
Rev. 1 — 15 February 2011
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode
designed to protect one signal line from the damage caused by ESD and other transients.
The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD)
plastic package with visible and solderable side pads.
The combination of extremely low capacitance and ultra low clamping voltage makes the
device ideal for high-speed data line protection applications.
1.2 Features and benefits
ESD protection of one line
Ultra low diode capacitance
C
d
= 0.95 pF
Ultra low clamping voltage: V
CL
= 8 V
Ultra low leakage current: I
RM
= 1 nA
ESD protection up to 8 kV
IEC 61000-4-2; level 4 (ESD)
Ultra small SMD plastic package
Solderable tin-plated side pads
AEC-Q101 qualified
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
10/100/1000 Mbit/s Ethernet
Communication systems
Portable electronics
Subscriber Identity Module (SIM) card
protection
USB, High-Definition Multimedia
Interface (HDMI), FireWire
High-speed data lines
1.4 Quick reference data
Table 1.
Symbol
V
RWM
C
d
Quick reference data
Parameter
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
Conditions
Min
-
-
Typ
-
0.95
Max
5.5
1.1
Unit
V
pF
Nexperia
PESD5V0X1ULD
Ultra low capacitance unidirectional ESD protection diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
1
2
006aaa152
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD5V0X1ULD
-
Description
leadless ultra small plastic package; 2 terminals;
body 1
0.6
0.4 mm
Version
SOD882D
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
1111 0000
Type number
PESD5V0X1ULD
[1]
For SOD882D binary marking code description, see
Figure 1.
4.1 Binary marking code description
CATHODE BAR
READING DIRECTION
VENDOR CODE
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac477
Fig 1.
SOD882D binary marking code description
PESD5V0X1ULD
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 15 February 2011
2 of 12
Nexperia
PESD5V0X1ULD
Ultra low capacitance unidirectional ESD protection diode
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
PP
T
j
T
amb
T
stg
[1]
[2]
Parameter
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
s
[1][2]
Min
-
-
55
65
Max
1.5
150
+150
+150
Unit
A
C
C
C
Non-repetitive current pulse 8/20
s
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 2.
Table 6.
ESD maximum ratings
T
amb
= 25
C unless otherwise specified.
Symbol
V
ESD
Parameter
electrostatic
discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
machine model
MIL-STD-883
(human body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to 2.
[2]
[1][2]
Min
-
-
-
Max
8
400
10
Unit
kV
V
kV
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
PESD5V0X1ULD
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 15 February 2011
3 of 12
Nexperia
PESD5V0X1ULD
Ultra low capacitance unidirectional ESD protection diode
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 2.
8/20
s
pulse waveform according to
IEC 61000-4-5
Fig 3.
ESD pulse waveform according to
IEC 61000-4-2
PESD5V0X1ULD
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 15 February 2011
4 of 12
Nexperia
PESD5V0X1ULD
Ultra low capacitance unidirectional ESD protection diode
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter
V
RWM
I
RM
V
BR
C
d
V
CL
r
dyn
[1]
[2]
[3]
Conditions
Min
-
-
5.8
-
[1][2]
[3]
Typ
-
1
7.5
0.95
8
0.25
Max
5.5
100
10
1.1
-
-
Unit
V
nA
V
pF
V
reverse standoff
voltage
reverse leakage current V
RWM
= 5 V
breakdown voltage
diode capacitance
clamping voltage
dynamic resistance
I
R
= 10 mA
f = 1 MHz; V
R
= 0 V
I
PP
= 1.5 A
I
R
= 10 A
-
-
Non-repetitive current pulse 8/20
s
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 2.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse;
ANS/IESD STM5-1-2008.
I
1.2
C
d
(pF)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.0
−I
PP
006aaa407
006aac511
−V
CL
−V
BR
−V
RWM
−I
RM
−I
R
−
P-N
V
+
1.0
2.0
3.0
4.0
V
R
(V)
5.0
f = 1 MHz; T
amb
= 25
C
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
Fig 5.
V-I characteristics for a unidirectional
ESD protection diode
PESD5V0X1ULD
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 15 February 2011
5 of 12
stm32/stm8
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