Dual, Low-Noise, Rail-To-Rail Operational Amplifier 8-SOIC 0 to 70
参数名称 | 属性值 |
Brand Name | Texas Instruments |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | Texas Instruments(德州仪器) |
零件包装代码 | SOIC |
包装说明 | SOP, SOP8,.25 |
针数 | 8 |
Reach Compliance Code | compli |
ECCN代码 | EAR99 |
Factory Lead Time | 12 weeks |
放大器类型 | OPERATIONAL AMPLIFIER |
架构 | VOLTAGE-FEEDBACK |
最大平均偏置电流 (IIB) | 0.00006 µA |
25C 时的最大偏置电流 (IIB) | 0.00006 µA |
最小共模抑制比 | 70 dB |
标称共模抑制比 | 75 dB |
频率补偿 | YES |
最大输入失调电流 (IIO) | 0.00006 µA |
最大输入失调电压 | 2500 µV |
JESD-30 代码 | R-PDSO-G8 |
JESD-609代码 | e4 |
长度 | 4.9 mm |
低-偏置 | YES |
低-失调 | NO |
微功率 | NO |
湿度敏感等级 | 1 |
负供电电压上限 | -8 V |
标称负供电电压 (Vsup) | -5 V |
功能数量 | 2 |
端子数量 | 8 |
最高工作温度 | 70 °C |
最低工作温度 | |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | SOP |
封装等效代码 | SOP8,.25 |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
包装方法 | TR |
峰值回流温度(摄氏度) | 260 |
功率 | NO |
电源 | +-2.2/+-8/4.4/16 V |
可编程功率 | NO |
认证状态 | Not Qualified |
座面最大高度 | 1.75 mm |
最小摆率 | 1.7 V/us |
标称压摆率 | 3.6 V/us |
最大压摆率 | 1.5 mA |
供电电压上限 | 8 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式 | GULL WING |
端子节距 | 1.27 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
标称均一增益带宽 | 2180 kHz |
最小电压增益 | 15000 |
宽带 | NO |
宽度 | 3.9 mm |
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TLC2272QDG4 | Texas Instruments(德州仪器) | Dual, Low-Noise, Rail-To-Rail Operational Amplifier 8-SOIC |
TLC2272ID | Texas Instruments(德州仪器) | Dual, Low-Noise, Rail-To-Rail Operational Amplifier 8-SOIC |
TLC2272IDR | Texas Instruments(德州仪器) | 增益带宽积(GBP):2.25MHz 放大器组数:2 运放类型:General Purpose 各通道功耗:2.4mA 压摆率(SR):3.6 V/us 电源电压:4.4V ~ 16V, ±2.2V ~ 8V 芯片 运算放大器 双通道 SMD 运放类型: 低噪声 放大器数目: 2 摆率: 3.6V/μs 电源??压范围: ± 2.2V 至 ± 8V 放大器封装类型: SOIC 针脚数: 8 带宽: 2.18MHz 工作温度最小值: -40°C 工作温度最高值: 125°C MSL: MSL 1 -无限制 SVHC(高度关注物质): No SVHC (20-Jun-2013) 增益带宽: 2.18MHz 工作温度范围: -40°C 至 +125°C 电源电压最大值: 16V 电源电压最小值: 4.4V 输入/输出类型: Rail-Rail Outputs 输入偏移电压 最大: 2.5mV |
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