–O
Ordering Information
BV
DSS
/
BV
DGS
200V
240V
†
TE –
OLE
BS
TN0520
TN0524
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
R
DS(ON)
(max)
10Ω
10Ω
I
D(ON)
(min)
300mA
300mA
V
GS(th)
(max)
1.5V
1.5V
Order Number / Package
TO-39
TN0520N2
—
TO-92
TN0520N3
TN0524N3
Die
†
TN0520ND
TN0524ND
MIL visual screening available
7
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Features
■
Low threshold —1.5V max.
■
High input impedance
■
Low input capacitance — 45pF typical
■
Fast switching speeds
■
Low on resistance
■
Free from secondary breakdown
■
Low input and output leakage
■
Complementary N- and P-channel devices
Applications
■
Logic level interfaces – ideal for TTL and CMOS
■
Solid state relays
■
Battery operated systems
■
Photo voltaic drives
■
Analog switches
■
General purpose line drivers
■
Telecom switches
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
7-39
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
DGS
SGD
TO-39
Case: DRAIN
TO-92
Note: See Package Outline section for dimensions.
TN0520/TN0524
Thermal Characteristics
Package
TO-39
TO-92
I
D
(continuous)*
0.7A
0.3A
I
D
(pulsed)
1.5A
1.0A
Power Dissipation
@ T
C
= 25
°
C
3.5W
1.0W
θ
jc
°
C/W
35
125
θ
ja
°
C/W
125
170
I
DR
*
0.7A
0.3A
I
DRM
1.5A
1.0A
*
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
TN0524
TN0520
Min
240
200
0.6
-3.0
1.5
-4.0
100
10
500
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
0.15
100
300
360
850
9.0
7.0
0.9
0.35
45
15
3.0
3.0
3.0
5.0
3.0
1.1
400
60
35
8.0
5.0
5.0
10
9.0
2.5
V
ns
V
GS
= 0V, I
SD
= 100mA
V
GS
= 0V, I
SD
= 100mA
ns
V
DD
= 25V
I
D
= 0.3A
R
GEN
= 25Ω
pF
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
15
10
1.5
Ω
%/°C
µA
mA
V
mV/°C
nA
Typ
Max
Unit
V
Conditions
V
GS
= 0V, I
D
=1mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0V, V
GS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 3V, V
DS
= 25V
V
GS
= 5V, V
DS
= 25V
V
GS
= 3V, I
D
= 50mA
V
GS
= 5V, I
D
= 100mA
V
GS
= 5V, I
D
= 100mA
V
DS
= 25V, I
D
= 0.2A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
O
–
Circuit
Switching Waveforms and Test
10V
TE –
SOLE
B
V
DD
R
L
90%
INPUT
0V
PULSE
GENERATOR
R
gen
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
10%
10%
INPUT
OUTPUT
0V
90%
90%
7-40
Ω
OUTPUT
D.U.T.
TN0520/TN0524
Typical Performance Curves
Output Characteristics
2.0
–
TE –
SOLE
OB
1.0
0.8
6V
Saturation Characteristics
VGS = 10V
1.6
VGS = 10V
6V
I
D
(amperes)
4V
0.8
I
D
(amperes)
1.2
0.6
0.4
4V
0.4
2V
0
0
20
40
60
80
100
0
0
2
4
6
8
10
0.2
2V
V
DS
(volts)
Transconductance vs. Drain Current
0.5
5
V
DS
(volts)
Power Dissipation vs. Case Temperature
7
0.4
T
A
= -55°C
4
TO-39
G
FS
(siemens)
0.2
P
D
(watts)
0.3
T
A
= 25°C
3
T
A
= 150°C
2
TO-92
0.1
V
DS
= 25V
0
0
0.2
0.4
0.6
0.8
1.0
0
0
25
50
75
100
125
150
1
I
D
(amperes)
Maximum Rated Safe Operating Area
1.0
TO-92 (pulsed)
1.0
T
C
(
°
C)
Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
TO-39
P
D
= 3.5W
T
vv
= 25°C
TO-39 (DC)
I
D
(amperes)
0.1
TO-92 (DC)
0.6
0.4
0.01
T
C
= 25°C
0.2
TO-92
P
D
= 1W
T
C
= 25°C
0.01
0.1
1.0
10
0.001
1
10
100
1000
0
0.001
V
DS
(volts)
t
p
(seconds)
7-41
Typical Performance Curves
BV
DSS
Variation with Temperature
1.20
TE –
OLE
OBS
–
On-Resistance vs. Drain Current
20
TN0520/TN0524
V
GS
= 3V
1.14
16
BV
DSS
(normalized)
R
DS(ON)
(ohms)
V
GS
= 5V
12
1.08
1.02
8
0.96
4
0.90
-50
0
50
100
150
0
0
0.2
0.4
0.6
0.8
1.0
T
j
(
°
C)
Transfer Characteristics
1.5
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
2.4
V
DS
= 25V
1.2
T
A
= 25
°
C
1.6
2.0
T
A
= -55
°
C
V
GS(th)
(normalized)
1.4
R
DS(ON)
@ 5V, 0.1A
1.6
0.9
T
A
=125
°
C
0.6
1.2
V
(th)
@ 1.0mA
1.2
1.0
0.8
0.8
0.3
0
0
2
4
6
8
10
-50
0
50
100
150
0
0.4
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
100
10
T
j
(
°
C)
Gate Drive Dynamic Characteristics
f = 1MHz
8
75
V
DS
= 10V
V
DS
= 40V
C (picofarads)
V
GS
(volts)
6
50
C
ISS
125 pF
4
25
C
OSS
C
RSS
0
0
10
20
30
40
2
50pF
0
0
0.4
0.8
1.2
1.6
2
V
DS
(volts)
Q
G
(nanocoulombs)
7-42
R
DS(ON)
(normalized)
I
D
(amperes)
MEMS传感器
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