VS-GB100TP120N
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
2 in 1 Package, 1200 V, 100 A
FEATURES
• High short circuit capability, self limiting to 6 x I
C
• 10 μs short circuit capability
• V
CE(on)
with positive temperature coefficient
• Maximum junction temperature 150 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
INT-A-PAK
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
CES
I
C
at T
C
= 80 °C
V
CE(on)
(typical)
at I
C
= 100 A, 25 °C
Speed
Package
Circuit configuration
1200 V
100 A
1.80 V
8 kHz to 30 kHz
INT-A-PAK
Half bridge
TYPICAL APPLICATIONS
• AC inverter drives
• Switching mode power supplies
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Collector to emitter voltage
Gate to emitter voltage
Collector current
Pulsed collector current
Diode continuous forward current
Diode maximum forward current
Maximum power dissipation
Short circuit withstand time
RMS isolation voltage
I
2
t-value, diode
SYMBOL
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
t
SC
V
ISOL
I
2
t
T
J
= 150 °C
T
J
= 125 °C
f = 50 Hz, t = 1 min
V
R
= 0 V, t = 10 ms, T
J
= 125 °C
T
C
= 25 °C
T
C
= 80 °C
t
p
= 1 ms
TEST CONDITIONS
MAX.
1200
± 20
200
100
200
100
200
650
10
2500
1050
W
μs
V
A
2
s
A
UNITS
V
Note
(1)
Repetitive rating: pulse width limited by maximum junction temperature.
IGBT ELECTRICAL SPECIFICATIONS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate to emitter threshold voltage
Collector cut-off current
Gate to emitter leakage current
SYMBOL
V
(BR)CES
V
CE(on)
V
GE(th)
I
CES
I
GES
TEST CONDITIONS
V
GE
= 0 V, I
C
= 1.0 mA, T
J
= 25 °C
V
GE
= 15 V, I
C
= 100 A, T
J
= 25 °C
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C
V
CE
= V
GE
, I
C
= 4.0 mA, T
J
= 25 °C
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C
MIN.
1200
-
-
5.0
-
-
TYP.
-
1.80
2.05
6.2
-
-
MAX.
-
2.20
-
7.0
5.0
400
mA
nA
V
UNITS
Revision: 05-Oct-17
Document Number: 94821
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB100TP120N
www.vishay.com
Vishay Semiconductors
SYMBOL
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
I
SC
R
gint
L
CE
R
CC’+EE’
T
C
= 25 °C
V
GE
= 0 V, V
CE
= 25 V, f = 1.0 MHz,
T
J
= 25 °C
t
sc
10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 900 V, V
CEM
1200 V
V
CC
= 600 V, I
C
= 100 A, R
g
= 5.6
,
V
GE
= ± 15 V, T
J
= 125 °C
V
CC
= 600 V, I
C
= 100 A, R
g
= 5.6
,
V
GE
= ± 15 V, T
J
= 25 °C
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
279
61
308
205
5.56
6.95
287
63
328
360
7.85
10.55
7.43
0.52
0.34
470
2
-
0.75
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30
-
A
nH
m
nF
mJ
ns
mJ
ns
UNITS
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
SC data
Internal gate resistance
Stray inductance
Module lead resistance, terminal to chip
DIODE ELECTRICAL SPECIFICATIONS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Diode forward voltage
Diode reverse recovery charge
Diode peak reverse recovery current
Diode reverse recovery energy
SYMBOL
V
F
Q
rr
I
rr
E
rec
I
F
= 100 A, V
R
= 600 V,
dI
F
/dt = -2000 A/μs,
V
GE
= -15 V
TEST CONDITIONS
I
F
= 100 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
MIN.
-
-
-
-
-
-
-
-
TYP.
1.90
2.00
5.52
11.88
85
103
2.06
5.56
MAX.
2.30
-
-
-
-
-
-
-
UNITS
V
μC
A
mJ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction temperature
Storage temperature range
Junction to case
Case to sink
Mounting torque
Weight of module
IGBT (per 1/2 module)
Diode (per 1/2 module)
SYMBOL
T
J
T
STG
R
thJC
R
thCS
Conductive grease applied
Power terminal screw: M5
Mounting screw: M6
TEST CONDITIONS
MIN.
-
-40
-
-
-
TYP.
-
-
-
-
0.05
2.5 to 5.0
3.0 to 5.0
150
MAX.
150
125
0.19
0.28
-
Nm
g
K/W
UNITS
°C
Revision: 05-Oct-17
Document Number: 94821
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB100TP120N
www.vishay.com
200
175
150
125
125 °C
25 °C
30
25
Vishay Semiconductors
V
CC
= 600 V
R
g
= 5.6
Ω
V
GE
= ± 15 V
T
J
=
125 °C
100
75
50
25
0
0
0.5
1
1.5
2
2.5
3
E
on
, E
off
(mJ)
20
15
10
5
E
off
E
on
I
C
(A)
V
GE
= 15 V
0
0
25
50
75
100
125
150
175
200
V
CE
(V)
Fig. 1 - IGBT Typical Output Characteristics
I
C
(A)
Fig. 3 - IGBT Switching Loss vs. I
C
200
175
150
125
125 °C
40
35
30
V
CC
= 600 V
I
C
= 100 A
V
GE
= ± 15 V
T
J
=
125 °C
E
on
100
75
50
25
0
5
6
7
8
9
10
25 °C
E
on
, E
off
(mJ)
25
20
15
10
5
I
C
(A)
E
off
V
CE
= 20 V
0
11
12
13
0
10
20
30
40
50
60
V
GE
(V)
Fig. 2 - IGBT Typical Transfer Characteristics
R
g
(Ω)
Fig. 4 - IGBT Switching Loss vs. R
g
220
200
180
160
140
I
C
, Module
I
C
(A)
120
100
80
60
40
20
0
0
R
g
= 5.6
Ω
V
GE
= ± 15 V
T
J
=
125 °C
250
500
750
1000
1250
1500
V
CE
(V)
Fig. 5 - RBSOA
Revision: 05-Oct-17
Document Number: 94821
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB100TP120N
www.vishay.com
Vishay Semiconductors
10
0
IGBT
Z
thJC
(K/W)
10
-1
10
-2
10
-3
10
-2
10
-1
10
0
10
1
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
200
175
150
25 °C
10
9
8
7
V
CC
= 600 V
R
g
= 5.6
Ω
V
GE
= - 15 V
T
J
=
125 °C
I
F
(A)
100
75
50
25
0
0
0.5
1
1.5
2
2.5
3
E (mJ)
125
125 °C
6
5
4
3
2
1
0
0
25
50
75
100
125
150
175
200
E
rec
V
F
(V)
Fig. 7 - Diode Forward Characteristics
I
F
(A)
Fig. 8 - Diode Switching Loss vs. I
C
8
7
6
E (mJ)
5
4
3
2
1
0
0
V
CC
= 600 V
I
C
= 100 A
V
GE
= - 15 V
T
J
=
125 °C
10
20
30
E
rec
40
50
60
R
g
(Ω)
Fig. 9 - Diode Switching Loss vs. R
g
Revision: 05-Oct-17
Document Number: 94821
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB100TP120N
www.vishay.com
Vishay Semiconductors
10
0
Diode
Z
thJC
(K/W)
10
-1
10
-2
10
-3
10
-2
10
-1
10
0
10
1
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95524
Revision: 05-Oct-17
Document Number: 94821
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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