Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
Symbol
R
θJC
Typ
−
Max
2.2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(i
F
= 8 Amps, T
J
= 125°C)
(i
F
= 8 Amps, T
J
= 25°C)
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
v
F
0.68
0.81
i
R
180
0.06
300
2
0.76
0.90
mA
V
TYPICAL CHARACTERISTICS
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
10
10
T
A
= 175°C
150°C
1
125°C
T
A
= 175°C
1
150°C
125°C
25°C
0
0.2
0.4
−40°C
0.6
0.8
1.0
1.2
0.1
0.1
0
0.2
25°C
0.4
0.6
−40°C
0.8
1.0
1.2
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
1.E−11
1.E−12
0
10
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
1.E−11
0
10
20
30
40
50
60
70
80
90 100
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
T
A
= 25°C
T
A
= −40°C
T
A
= 150°C
T
A
= 125°C
T
A
= 175°C
T
A
= 25°C
T
A
= −40°C
20
30
40
50
60
70
80
90 100
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
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2
MBR8H100MFS, NRVB8H100MFS
TYPICAL CHARACTERISTICS
1,000
C, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
I
F(AV)
, AVERAGE FORWARD
CURRENT (A)
20
18
16
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
90
100
60
80
100
120
140
160
V
R
, REVERSE VOLTAGE (V)
T
C
, CASE TEMPERATURE (°C)
R
qJC
= 2.2°C/W
Square Wave
dc
100
10
Figure 5. Typical Junction Capacitance
8
P
F(AV)
, AVERAGE FORWARD POW-
ER DISSIPATION (W)
I
PK
/I
AV
= 20
7
I
PK
/I
AV
= 10
6
Figure 6. Current Derating
T
J
= 175°C
I
PK
/I
AV
= 5
5
4
3
2
1
0
0
1
2
3
4
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Square Wave
dc
Figure 7. Forward Power Dissipation
100
10
R(t) (°C/W)
50% Duty Cycle
20%
10%
5%
2%
1%
Assumes 25°C ambient and soldered to
a 600 mm
2
− oz copper pad on PCB
1
0.1
Single Pulse
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
PULSE TIME (sec)
Figure 8. Thermal Response
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3
MBR8H100MFS, NRVB8H100MFS
PACKAGE DIMENSIONS
DFN6 5x6, 1.27P
(SO8 FL)
CASE 488AA
ISSUE M
0.20 C
D
2
D1
A
B
2X
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0
_
−−−
12
_
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
0.20 C
4X
E1
2
E
c
1
2
3
4
q
A1
TOP VIEW
C
0.10 C
A
0.10 C
SIDE VIEW
b
C A B
8X
DETAIL A
SEATING
PLANE
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
RECOMMENDED
SOLDERING FOOTPRINT*
DETAIL A
2X
0.495
2X
4.560
1.530
0.10
0.05
e/2
e
1
4
c
L
3.200
K
4.530
1.330
1
0.965
4X
E2
PIN 5
(EXPOSED PAD)
L1
M
0.905
2X
G
D2
BOTTOM VIEW
1.000
4X
0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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