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MT28EW512ABA1HJS-0SIT

产品描述IC FLASH 512M PARALLEL 56TSOP
产品类别存储    存储   
文件大小991KB,共81页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
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MT28EW512ABA1HJS-0SIT概述

IC FLASH 512M PARALLEL 56TSOP

MT28EW512ABA1HJS-0SIT规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Micron Technology
包装说明TSOP-56
Reach Compliance Codecompliant
ECCN代码3A991.B.1.A
Factory Lead Time3 weeks
最长访问时间95 ns
备用内存宽度8
JESD-30 代码R-PDSO-G56
长度18.4 mm
内存密度536870912 bit
内存集成电路类型FLASH
内存宽度16
功能数量1
端子数量56
字数33554432 words
字数代码32000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织32MX16
封装主体材料PLASTIC/EPOXY
封装代码TSSOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)260
编程电压3 V
座面最大高度1.2 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式GULL WING
端子节距0.5 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
类型NOR TYPE
宽度14 mm

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512Mb: x8/x16, 3V, MT28EW Embedded Parallel NOR
Features
Parallel NOR Flash Embedded Memory
MT28EW512ABA
Features
• Single-level cell (SLC) technology
• Density: 512Mb
• Supply voltage
– V
CC
= 2.7–3.6V (program, erase, read)
– V
CCQ
= 1.65 - V
CC
(I/O buffers)
• Asynchronous random/page read
– Page size: 16 words or 32 bytes
– Page access: 20ns
– Random access: 95ns (V
CC
= V
CCQ
= 2.7-3.6V)
– Random access: 100ns (V
CCQ
= 1.65-V
CC
)
• Buffer program (512-word program buffer)
– 2.0 MB/s (TYP) when using full buffer program
– 2.5 MB/s (TYP) when using accelerated buffer
program (V
HH
)
• Word/Byte program: 25us per word (TYP)
• Block erase (128KB): 0.2s (TYP)
• Memory organization
– Uniform blocks: 128KB or 64KW each
– x8/x16 data bus
• Program/erase suspend and resume capability
– Read from another block during a PROGRAM
SUSPEND operation
– Read or program another block during an ERASE
SUSPEND operation
• Unlock bypass, block erase, chip erase, and write to
buffer capability
• BLANK CHECK operation to verify an erased block
• CYCLIC REDUNDANCY CHECK (CRC) operation to
verify a program pattern
• V
PP
/WP# protection
– Protects first or last block regardless of block
protection settings
• Software protection
– Volatile protection
– Nonvolatile protection
– Password protection
• Extended memory block
– 128-word (256-byte) block for permanent, secure
identification
– Programmed or locked at the factory or by the
customer
• JESD47-compliant
– 100,000 (minimum) ERASE cycles per block
– Data retention: 20 years (TYP)
• Package
– 56-pin TSOP 14 x 20mm (JS)
,
– 64-ball LBGA, 11 x 13mm (PC)
– 56-ball VFBGA, 7 x 9mm (PN)
• RoHS-compliant, halogen-free packaging
• Operating temperature
– Ambient: –40°C to +85°C
PDF: 09005aef855e354a
mt28ew_generation-b_512mb.pdf - Rev. I 05/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.

 
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