电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

USB0824C-A

产品描述500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
产品类别分立半导体    二极管   
文件大小76KB,共2页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 选型对比 全文预览

USB0824C-A概述

500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE

USB0824C-A规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Microsemi
Objectid1547786709
零件包装代码SOD
包装说明R-PDSO-G8
针数8
Reach Compliance Codeunknow
ECCN代码EAR99
compound_id9171856
其他特性LOW CAPACITANCE
最小击穿电压26.7 V
最大钳位电压43 V
配置SEPARATE, 4 ELEMENTS
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码R-PDSO-G8
JESD-609代码e0
最大非重复峰值反向功率耗散500 W
元件数量4
端子数量8
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
认证状态Not Qualified
最大重复峰值反向电压24 V
表面贴装YES
技术AVALANCHE
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

下载PDF文档
USB0803C-A thru USB0824C-A, e3
Bidirectional TVSarray ™
SCOTTSDALE DIVISION
DESCRIPTION
This Transient Voltage Suppressor (TVS) array is packaged in an SO-8 configuration
giving protection to 2 Bidirectional data or interface lines. It is designed for use in
applications where very low capacitance protection is required at the board level from
voltage transients caused by electrostatic discharge (ESD) as defined in IEC 61000-4-2,
electrical fast transients (EFT) per IEC 61000-4-4 and effects of secondary lightning. It is
also available with either Tin-Lead plated terminations or as RoHS Compliant with
annealed matte-Tin finish by adding an “e3” suffix to the part number*.
Using the schematic on the second page, pins 1 & 2 are tied together for the first
protected line, and pins 7 & 8 are tied together to the ground. The same would then
occur for a second protected line where pins 3 & 4 are tied together and pins 5 & 6 are
tied together to the ground. These may also be switched in polarity connections since
the electrical features are the same in each antiparallel (opposite facing) leg when the
pins are tied together in this manner for bidirectional protection.
These TVS arrays have a peak power rating of 500 watts for an 8/20
μsec
pulse. This
array is suitable for protection of sensitive circuitry consisting of TTL, CMOS DRAM’s,
SRAM’s, HCMOS, HSIC microprocessors,
UNIVERSAL SERIAL BUS (USB)
and I/O
transceivers. The USB08XXC-A product provides board level protection from static
electricity and other induced voltage surges that can damage or upset sensitive circuitry.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
SO–8
FEATURES
Protects up to 2 bi-directional lines
Surge protection per IEC 61000-4-2, IEC 61000-4-4
Provides electrically isolated protection
UL 94V-0 Flammability Classification
RoHS Compliant devices available by adding “e3” suffix
LOW CAPACITANCE 5 pF per line pair
LOW LEAKAGE
APPLICATIONS / BENEFITS
EIA-RS485 data rates:
5 Mbs
10 Base T Ethernet
USB date rate: 900 Mbs
Tape & Reel per EIA Standard 481
13 inch reel; 2,500 pieces (OPTIONAL)
Carrier tubes; 95 pcs (STANDARD)
MAXIMUM RATINGS
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Peak Pulse Power: 500 watts (8/20 µs, Figure 1)
Pulse Repetition Rate: < .01%
Solder Temperature: 260°C for 10 s (maximum)
MECHANICAL AND PACKAGING
Molded SO-8 Surface Mount
Weight 0.066 grams (approximate)
Marking: Logo, device marking code*, date code
Pin #1 defined by dot on top of package
ELECTRICAL CHARACTERISTICS
STAND OFF
VOLTAGE
V
WM
VOLTS
MAX
USB0803C-A
USB0805C-A
USB0812C-A
USB0815C-A
USB0824C-A
U3CA
U5CA
U12CA
U15CA
U24CA
3.3
5.0
12.0
15.0
24.0
BREAKDOWN
VOLTAGE
V
BR
@1 mA
VOLTS
MIN
4
6.0
13.3
16.7
26.7
CLAMPING
VOLTAGE
V
C
@ 1 Amp
(Figure 2)
VOLTS
MAX
8
10.8
19
24
43
CLAMPING
VOLTAGE
V
C
@ 5 Amp
(Figure 2)
VOLTS
MAX
11
13
26
32
57
STANDBY
CURRENT
I
D
@ V
WM
µA
MAX
200
40
1
1
1
CAPACITANCE
(f=1 MHz)
C
@0V
pF
MAX
5
5
5
5
5
TEMPERATURE
COEFFICIENT
OF V
BR
α
VBR
PART
NUMBER
DEVICE
MARKING
*
USB08xxC-A, e3
mV/°C
MAX
-5
1
8
11
28
*
Device marking has an e3 suffix added for RoHS Compliant option, e.g. U3CAe3, U5CAe3, U12CAe3, U15CAe3, or
U24CAe3
Copyright
©
2005
6-29-2005 REV H
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

USB0824C-A相似产品对比

USB0824C-A USB0803C-A USB0812C-A USB0805C-A USB0815C-A
描述 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
是否Rohs认证 不符合 不符合 不符合 不符合 不符合
零件包装代码 SOD SOD SOD SOD SOD
包装说明 R-PDSO-G8 PLASTIC, SOP-8 R-PDSO-G8 PLASTIC, SOP-8 R-PDSO-G8
针数 8 8 8 8 8
Reach Compliance Code unknow unknow compli unknow compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 LOW CAPACITANCE LOW CAPACITANCE LOW CAPACITANCE LOW CAPACITANCE LOW CAPACITANCE
最小击穿电压 26.7 V 4 V 13.3 V 6 V 16.7 V
配置 SEPARATE, 4 ELEMENTS SEPARATE, 4 ELEMENTS SEPARATE, 4 ELEMENTS SEPARATE, 4 ELEMENTS SEPARATE, 4 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
JESD-609代码 e0 e0 e0 e0 e0
最大非重复峰值反向功率耗散 500 W 500 W 500 W 500 W 500 W
元件数量 4 4 4 4 4
端子数量 8 8 8 8 8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性 BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 24 V 3.3 V 12 V 5 V 15 V
表面贴装 YES YES YES YES YES
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子面层 Tin/Lead (Sn/Pb) TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
厂商名称 Microsemi Microsemi - Microsemi -
最大钳位电压 43 V - 19 V - 24 V

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 725  2464  87  427  172  15  50  2  9  4 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved