Datasheet> 器件分类 > 存储> 存储> MX25L6473EMBI-10G

文档预览

MX25L6473EMBI-10G: 产品描述IC FLASH 64MBIT; 产品类别存储存储; 文件大小1MB，共87页; 制造商Macronix; 官网地址http://www.macronix.com/en-us/Pages/default.aspx; 标准

下载文档详细参数选型对比全文预览

MX25L6473EMBI-10G概述

IC FLASH 64MBIT

MX25L6473EMBI-10G规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Macronix
零件包装代码	SOIC
包装说明	VSOP, TSOP8,.3
针数	8
Reach Compliance Code	unknown
ECCN代码	EAR99
Factory Lead Time	16 weeks
其他特性	CAN BE ORGNISED AS 64 MBIT X 1
备用内存宽度	2
最大时钟频率 (fCLK)	104 MHz
数据保留时间-最小值	20
耐久性	100000 Write/Erase Cycles
JESD-30 代码	S-PDSO-G8
长度	5.28 mm
内存密度	67108864 bit
内存集成电路类型	FLASH
内存宽度	4
功能数量	1
端子数量	8
字数	16777216 words
字数代码	16000000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	16MX4
封装主体材料	PLASTIC/EPOXY
封装代码	VSOP
封装等效代码	TSOP8,.3
封装形状	SQUARE
封装形式	SMALL OUTLINE, VERY THIN PROFILE
并行/串行	SERIAL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	3/3.3 V
编程电压	2.7 V
认证状态	Not Qualified
座面最大高度	1 mm
串行总线类型	SPI
最大待机电流	0.00004 A
最大压摆率	0.035 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	2.7 V
标称供电电压 (Vsup)	3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子形式	GULL WING
端子节距	1.27 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
类型	NOR TYPE
宽度	5.28 mm
写保护	SOFTWARE

文档预览

下载PDF文档

全文
预览

MX25L6473E

3V, 64M-BIT [x 1/x 2/x 4]

CMOS MXSMIO

(SERIAL MULTI I/O)

FLASH MEMORY

Key Features

• Multi I/O Support - Single I/O, Dual I/O and Quad I/O

• Auto Erase and Auto Program Algorithms

• Continuous Program mode

• Permanently fixed QE bit, QE=1; and 4 I/O mode is enabled

P/N: PM1907

REV. 1.4, JUN. 16, 2015

MX25L6473E

Contents

1. FEATURES ........................................................................................................................................................ 4

2. GENERAL DESCRIPTION ............................................................................................................................... 6

Table 1. Read Performance ..................................................................................................................6

3. PIN CONFIGURATION ...................................................................................................................................... 7

4. PIN DESCRIPTION ............................................................................................................................................ 7

5. BLOCK DIAGRAM............................................................................................................................................. 8

6. DATA PROTECTION.......................................................................................................................................... 9

Table 2. Protected Area Sizes ..............................................................................................................10

Table 3. 4K-bit Secured OTP Definition

............................................................................................... 11

7. MEMORY ORGANIZATION ............................................................................................................................. 12

Table 4. Memory Organization .............................................................................................................12

8. DEVICE OPERATION ...................................................................................................................................... 13

9. COMMAND DESCRIPTION ............................................................................................................................. 14

Table 5. Command Sets .......................................................................................................................14

9-1. Write Enable (WREN) ..........................................................................................................................17

9-2. Write Disable (WRDI)...........................................................................................................................18

9-3. Read Identification (RDID)

...................................................................................................................19

9-4. Read Status Register (RDSR) .............................................................................................................20

9-5. Write Status Register (WRSR).............................................................................................................23

Table 6. Protection Modes....................................................................................................................24

9-6. Read Data Bytes (READ) ....................................................................................................................26

9-7. Read Data Bytes at Higher Speed (FAST_READ) ..............................................................................27

9-8. Dual Read Mode (DREAD) ..................................................................................................................28

9-9. 2 x I/O Read Mode (2READ) ...............................................................................................................29

9-10. Quad Read Mode (QREAD) ................................................................................................................30

9-11. 4 x I/O Read Mode (4READ) ...............................................................................................................31

9-12. Performance Enhance Mode ...............................................................................................................32

9-13. Performance Enhance Mode Reset (FFh) ...........................................................................................32

9-14. Sector Erase (SE) ................................................................................................................................35

9-15. Block Erase (BE) .................................................................................................................................36

9-16. Block Erase (BE32K) ...........................................................................................................................37

9-17. Chip Erase (CE) ...................................................................................................................................38

9-18. Page Program (PP) .............................................................................................................................39

9-19. 4 x I/O Page Program (4PP) ................................................................................................................40

9-20. Continuous Program mode (CP mode)................................................................................................43

9-21. Deep Power-down (DP) .......................................................................................................................45

9-22. Release from Deep Power-down (RDP), Read Electronic Signature (RES) .......................................46

9-23. Read Electronic Manufacturer ID & Device ID (REMS), (REMS2), (REMS4) .....................................48

9-24. ID Read ................................................................................................................................................49

Table 7. ID Definitions

.........................................................................................................................49

9-25. Enter Secured OTP (ENSO) ................................................................................................................49

9-26. Exit Secured OTP (EXSO) ...................................................................................................................49

9-27. Read Security Register (RDSCUR) .....................................................................................................50

Table 8. Security Register Definition

....................................................................................................51

9-28. Write Security Register (WRSCUR).....................................................................................................52

P/N: PM1907

REV. 1.4, JUN. 16, 2015

MX25L6473E

Write Protection Selection (WPSEL)....................................................................................................52

Single Block Lock/Unlock Protection (SBLK/SBULK) ..........................................................................56

Read Block Lock Status (RDBLOCK) ..................................................................................................59

Gang Block Lock/Unlock (GBLK/GBULK) ...........................................................................................60

Enable SO to Output RY/BY# (ESRY) .................................................................................................61

Disable SO to Output RY/BY# (DSRY) ................................................................................................61

No Operation (NOP) ............................................................................................................................61

Software Reset (Reset-Enable (RSTEN) and Reset (RST)) ...............................................................61

Read SFDP Mode (RDSFDP)..............................................................................................................62

Table 9. Signature and Parameter Identification Data Values

.............................................................63

Table 10. Parameter Table (0): JEDEC Flash Parameter Tables .........................................................64

Table 11. Parameter Table (1): Macronix Flash Parameter Tables.......................................................66

10. POWER-ON STATE ....................................................................................................................................... 68

11. ELECTRICAL SPECIFICATIONS .................................................................................................................. 69

11-1. Absolute Maximum Ratings .................................................................................................................69

11-2. Capacitance .........................................................................................................................................69

Table 12. DC Characteristics................................................................................................................71

Table 13. AC Characteristics ................................................................................................................72

12. TIMING ANALYSIS ........................................................................................................................................ 74

Table 14. Power-Up Timing .................................................................................................................75

12-1. Initial Delivery State .............................................................................................................................75

13. OPERATING CONDITIONS ........................................................................................................................... 76

14. ERASE AND PROGRAMMING PERFORMANCE ........................................................................................ 78

15. DATA RETENTION ........................................................................................................................................ 78

16. LATCH-UP CHARACTERISTICS .................................................................................................................. 78

17. ORDERING INFORMATION .......................................................................................................................... 79

18. PART NAME DESCRIPTION ......................................................................................................................... 80

19. PACKAGE INFORMATION ............................................................................................................................ 81

20. REVISION HISTORY ..................................................................................................................................... 86

9-29.

9-30.

9-31.

9-32.

9-33.

9-34.

9-35.

9-36.

9-37.

P/N: PM1907

REV. 1.4, JUN. 16, 2015

MX25L6473EMBI-10G相似产品对比

	MX25L6473EMBI-10G	MX25L6473EM2R-12G	MX25L6473EM2I-10G	MX25L6473EBBI-10G	MX25L6473EZNI-10G
描述	IC FLASH 64MBIT	Flash, 16MX4, PDSO8, SOP-8	IC FLASH 64MBIT	IC FLASH 64MBIT	IC FLASH 64MBIT
厂商名称	Macronix	Macronix	Macronix	Macronix	Macronix
包装说明	VSOP, TSOP8,.3	SOP,	SOP, SOP8,.3	VFBGA,	HVSON, SOLCC8,.25
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
其他特性	CAN BE ORGNISED AS 64 MBIT X 1	ALSO ORGANISED AS 64M X1	CAN BE ORGNISED AS 64 MBIT X 1	ALSO CONFIGURABLE AS 64M X 1	CAN BE ORGNISED AS 64 MBIT X 1
备用内存宽度	2	2	2	2	2
JESD-30 代码	S-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PBGA-B12	R-PDSO-N8
内存密度	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit
内存集成电路类型	FLASH	FLASH	FLASH	FLASH	FLASH
内存宽度	4	4	4	4	4
功能数量	1	1	1	1	1
端子数量	8	8	8	12	8
字数	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
字数代码	16000000	16000000	16000000	16000000	16000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
组织	16MX4	16MX4	16MX4	16MX4	16MX4
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	VSOP	SOP	SOP	VFBGA	HVSON
封装形状	SQUARE	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, VERY THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL
编程电压	2.7 V	3 V	2.7 V	2.7 V	2.7 V
座面最大高度	1 mm	2.16 mm	2.16 mm	0.52 mm	0.8 mm
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
标称供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V
表面贴装	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS
端子形式	GULL WING	GULL WING	GULL WING	BALL	NO LEAD
端子节距	1.27 mm	1.27 mm	1.27 mm	0.5 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	BOTTOM	DUAL
是否Rohs认证	符合	-	符合	符合	符合
零件包装代码	SOIC	-	SOIC	-	QFN
针数	8	-	8	-	8
ECCN代码	EAR99	-	-	EAR99	EAR99
Factory Lead Time	16 weeks	-	16 weeks	16 weeks	16 weeks
最大时钟频率 (fCLK)	104 MHz	-	104 MHz	104 MHz	104 MHz
数据保留时间-最小值	20	-	20	-	20
耐久性	100000 Write/Erase Cycles	-	100000 Write/Erase Cycles	-	100000 Write/Erase Cycles
长度	5.28 mm	5.28 mm	5.28 mm	-	6 mm
最高工作温度	85 °C	-	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-	-40 °C	-40 °C	-40 °C
封装等效代码	TSOP8,.3	-	SOP8,.3	-	SOLCC8,.25
峰值回流温度（摄氏度）	NOT SPECIFIED	-	NOT SPECIFIED	260	NOT SPECIFIED
电源	3/3.3 V	-	3/3.3 V	-	3/3.3 V
认证状态	Not Qualified	-	Not Qualified	-	Not Qualified
串行总线类型	SPI	-	SPI	-	SPI
最大待机电流	0.00004 A	-	0.00004 A	-	0.00004 A
最大压摆率	0.035 mA	-	0.035 mA	-	0.035 mA
温度等级	INDUSTRIAL	-	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	-	NOT SPECIFIED	40	NOT SPECIFIED
类型	NOR TYPE	-	NOR TYPE	NOR TYPE	NOR TYPE
宽度	5.28 mm	5.23 mm	5.23 mm	-	5 mm
写保护	SOFTWARE	-	SOFTWARE	-	SOFTWARE

MX25L6473EMBI-10G

MX25L6473EMBI-10G概述

MX25L6473EMBI-10G规格参数

文档预览

MX25L6473EMBI-10G相似产品对比

推荐资源