VS-16CTQ...HN3 Series
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 8 A
Base 2
common
cathode
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TO-220AB
1
2
3
Anode
Anode
2
1 Common 3
cathode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-220AB
2x8A
60 V, 80 V, 100 V
0.58 V
7 mA at 125 °C
175 °C
Common cathode
7.5 mJ
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
8 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
16
60 to 100
850
0.58
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak
reverse voltage
SYMBOL
V
R
V
RWM
60
80
100
V
VS-16CTQ060HN3
VS-16CTQ080HN3
VS-16CTQ100HN3
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward
current
See fig. 5
per leg
I
F(AV)
per device
Following any rated load
condition and with rated
V
RRM
applied
10 ms sine or 6 ms rect. pulse
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
5 µs sine or 3 µs rect. pulse
50 % duty cycle at T
C
= 148 °C, rectangular waveform
16
850
A
275
7.50
0.50
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
8
A
UNITS
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
I
FSM
E
AS
I
AR
Revision: 05-Mar-14
Document Number: 94848
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16CTQ...HN3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
8A
Maximum forward voltage drop per leg
See fig. 1
V
FM (1)
16 A
8A
16 A
Maximum reverse leakage current per leg
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
VALUES
0.72
0.88
0.58
0.69
0.55
7.0
0.415
11.07
500
8.0
10 000
mA
V
m
pF
nH
V/µs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance
junction to case per package
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
SYMBOL
T
J
, T
Stg
R
thJC
DC operation
R
thJC
R
thCS
Mounting surface, smooth and greased
1.63
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf ·in)
TEST CONDITIONS
VALUES
- 55 to 175
3.25
°C/W
UNITS
°C
Mounting torque
16CTQ060H
Marking device
Case style TO-220AB
16CTQ080H
16CTQ100H
Revision: 05-Mar-14
Document Number: 94848
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16CTQ...HN3 Series
www.vishay.com
Vishay Semiconductors
100
I
F
- Instantaneous Forward Current (A)
1000
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
I
R
- Reverse Current (mA)
10
1
0.1
100
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
0.01
0.001
0.0001
T
J
= 50 °C
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
0
20
40
60
80
100
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
20
40
60
80
100
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
0.1
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 05-Mar-14
Document Number: 94848
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16CTQ...HN3 Series
www.vishay.com
Vishay Semiconductors
7
180
Allowable Case Temperature (°C)
160
150
140
130
120
110
100
0
2
4
6
8
See note (1)
Square
wave
(D = 0.50)
80
% rated
V
R
applied
DC
Average Power Loss (W)
170
6
5
4
3
2
1
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
DC
10
12
14
0
2
4
6
8
10
12
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and
with
rated
V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
applied
Revision: 05-Mar-14
Document Number: 94848
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16CTQ...HN3 Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
16
2
C
3
T
4
Q
5
100
6
H
7
N3
8
1
2
3
4
5
6
7
8
-
-
-
Vishay Semiconductors product
Current rating (16 = 16 A)
Circuit configuration
C = Common cathode
-
Package
T = TO-220
060 = 60 V
080 = 80 V
100 = 100 V
-
-
Schottky “Q” series
Voltage rating
H = AEC-Q101 qualified
Environmental digit
-
-
N3 = Halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-16CTQ060HN3
VS-16CTQ080HN3
VS-16CTQ100HN3
QUANTITY PER T/R
50
50
50
MINIMUM ORDER QUANTITY
1000
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
TO-220AB -N3
www.vishay.com/doc?95222
www.vishay.com/doc?95028
www.vishay.com/doc?95279
Revision: 05-Mar-14
Document Number: 94848
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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