MUPT5e3 – MUPT48e3
and MUPTB5e3 – MUPTB48e3
Available
5V – 48V Powermite1, Surface Mount
Transient Voltage Suppressors
High-Reliability
Screening available in
reference to
MIL-PRF-19500
Tested in accordance
with the requirements of
AEC-Q101
DESCRIPTION
Microsemi’s unique and new Powermite MUPT series of transient voltage suppressors feature
oxide-passivated chips with high-temperature solder bonds for high surge capability and negligible
electrical degradation under repeated surge conditions. Both unidirectional and bidirectional
configurations are available. In addition to its size advantages, the Powermite package includes a
fully metallic bottom (anode) side that eliminates the possibility of solder flux entrapment at
assembly and a unique locking tab design serves as an integral heat sink. Its innovative design
makes this device fully compatible for use with automatic insertion equipment.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Powermite package with standoff voltages 5 to 48 V.
Both unidirectional and bidirectional polarities:
-Anode to case bottom (MUPT5e3 thru MUPT48e3)
-Bidirectional (MUPTB5e3 thru MUPTB48e3)
Clamping time less than 100 pico-seconds for unidirectional and 5 nano-seconds for bidirectional.
100% surge current testing of all parts.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
Both RoHS and non-RoHS compliant versions available.
APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching and induced RF transients.
-Integral heat sink / locking tabs
-Fully metallic bottom side eliminates flux entrapment
Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively.
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
Class 1: MUPT5 /MUPTB8 to 17
Class 2: MUPT5 /MUPTB5 to 12
2
DO-216AA
Package
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case (base tab)
Peak Pulse Power (see
Figure 1
and
Figure 2)
MUPT5e3 thru MUPT48e3:
MUPTB5e3 thru MUPTB48e3:
Rated Average Power Dissipation
o
(base tab < 112 C)
Impulse Repetition Rate (duty factor)
Solder Temperature @ 10 s
Notes:
1. When mounted on FR4 PC board with 1 oz copper.
Symbol
T
J
/ T
STG
R
ӨJA
R
ӨJC
P
PP
Value
-65 to +150
240
15
@ 8/20 µs @10/1000µs
1000
150
1000
150
2.5
0.01
260
Unit
C
C/W
o
C/W
o
o
Power Discretes & Modules
Business Unit
Discrete Products Group
Microsemi Corporation
PDM – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
PDM – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
W
W
%
C
P
M(AV)
T
SP
o
RF01103-1, Rev. B (19/05/17)
©2017 Microsemi Corporation
Page 1 of 5
MUPT5e3 – MUPT48e3
and MUPTB5e3 – MUPTB48e3
MECHANICAL and PACKAGING
CASE: Void-free transfer molded thermosetting epoxy compound meeting UL94V-0.
TERMINALS: Annealed matte-tin plating over copper and readily solderable per MIL-STD-750, method 2026.
MARKING:
Anode to TAB 1:
“T” plus the last two digits of part number underlined, e.g. MUPT5e3 is T05▪, MUPT12e3 is T12▪
Bipolar:
“B” plus the last two digits of part number underlined, e.g. MUPTB8e3 is B08▪, MUPTB12e3 is B12▪, etc.
Please note dot suffix (for e3 suffix)
POLARITY: Anode to TAB 1 (bottom) as described in marking above and on
last page.
TAPE & REEL option: Standard per EIA-481-B using 12 mm tape. Consult factory for quantities.
WEIGHT: Approximately 0.016 gram.
See
package dimensions
on last page.
PART NOMENCLATURE
Applicable to unidirectional MUPT5e3 – MUPT48e3 only:
M
Reliability Level*
M
MA
MX
MXL
*(See
Hi-Rel Non-
Hermetic Product
Portfolio)
Powermite
UPT 5
R (e3)
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
Reverse Polarity
Not available in 5V
Rated Standoff Voltage
5V - 48V
Applicable to bidirectional MUPTB5e3 – MUPTB48e3 only:
M
Reliability Level*
M
MA
MX
MXL
*(See
Hi-Rel Non-
Hermetic Product
Portfolio)
Powermite
Bi-directional
UPT
B
5
(e3)
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
Rated Standoff Voltage
5V - 48V
RF01103-1, Rev. B (19/05/17)
©2017 Microsemi Corporation
Page 2 of 5
MUPT5e3 – MUPT48e3
and MUPTB5e3 – MUPTB48e3
Symbol
V
(BR)
V
WM
P
PP
I
D
I
PP
C
SYMBOLS & DEFINITIONS
Definition
Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Standoff Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
Peak Pulse Power: The peak power that can be applied for a specified pulse width and waveform.
Standby Current: The maximum current that will flow at the specified voltage and temperature.
Peak Pulse Current: The peak current that can be applied for a specified pulse width and waveform.
Capacitance: The capacitance in picofarads of the TVS as defined @ 0 volts at a frequency of 1 MHz.
ELECTRICAL CHARACTERISTICS
RATED
STANDOFF
VOLTAGE
V
WM
Uni-directional
MUPT5
MUPT8
MUPT10
MUPT12
MUPT15
MUPT17
MUPT24
MUPT28
MUPT33
MUPT48
Bi-directional
MUPTB5
MUPTB8
MUPTB10
MUPTB12
MUPTB15
MUPTB17
MUPTB24
MUPTB28
MUPTB33
MUPTB48
V
5
8
10
12
15
17
24
28
33
48
MINIMUM
BREAKDOWN
VOLTAGE
V
(BR)
@ 1 mA
V
6.0
9.0
11.0
13.8
16.7
19.0
28.4
31.0
36.8
54.0
MAXIMUM
STANDBY
CURRENT
MAXIMUM PEAK
PULSE
CURRENT*
I
PP
@ 10/1000
s
A
15.7
10.9
8.33
6.94
5.77
5.14
3.47
3.13
2.65
1.78
MAXIMUM
CLAMPING
VOLTAGE
V
C
@ I
PP
V
9.5
13.7
18.0
21.6
26.0
29.2
43.2
47.8
56.7
84.3
MAXIMUM
TEMPERATURE
COEFFICIENT
of V
(BR)
DEVICE TYPE
I
D
@ V
WM
A
50
2
2
1
1
1
1
1
1
1
α
V(BR)
%/
o
C
0.030
0.040
0.045
0.050
0.055
0.060
0.070
0.075
0.080
0.090
* See
Figure 2
for I
PP
waveform of 10/1000
µs test pulse
.
RF01103-1, Rev. B (19/05/17)
©2017 Microsemi Corporation
Page 3 of 5
MUPT5e3 – MUPT48e3
and MUPTB5e3 – MUPTB48e3
GRAPHS
P
PP
– PEAK PULSE POWER – (kW)
EXPONENTIAL PULSE
(Pulse time duration is
defined as that point
where the pulse current
decays to 50% of I
PP
.)
tp – PULSE TIME (ms)
l
P
– PULSE CURRENT – (% of I
PP
)
tp: Pulse duration is defined as
that point where current decays
to 50% of I
PP
and tr = 10 µs
t- TIME- (ms)
FIGURE 1
Peak Pulse Power vs. Pulse Duration
FIGURE 2
Pulse Waveform for 10/1000
s
Exponential Surge
P
PP
– PEAK PULSE POWER – (% OF 25
o
C RATING)
CAPACITANCE – (pF)
measured at zero bias
measured at V
WM
TEMPERATURE – (
o
C)
V
WM
– STAND-OFF VOLTAGE – (V)
FIGURE 3
Derating Curve
FIGURE 4
Typical Capacitance vs. Stand-Off Voltage
RF01103-1, Rev. B (19/05/17)
©2017 Microsemi Corporation
Page 4 of 5
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