TSM9N90E
Taiwan Semiconductor
N-Channel Power MOSFET
900V, 9.0A, 1.4Ω
FEATURES
● 100% Avalanche Tested
● G-S ESD Protection Diode Embedded
● Pb-free plating
● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
definition
KEY PERFORMANCE PARAMETERS
PARAMETER
V
DS
R
DS(on)
(max)
Q
g
VALUE
900
1.4
72
UNIT
V
Ω
nC
APPLICATION
● Power Supply
● Lighting
TO-220
ITO-220
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
SYMBOL
V
DS
V
GS
T
C
= 25°C
T
C
= 100°C
I
D
I
DM
P
DTOT
E
AS
I
AS
T
J
, T
STG
TO-220
ITO-220
900
±30
9.0
5.7
36
UNIT
V
V
A
A
(Note 2)
Total Power Dissipation @ T
C
= 25°C
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
(Note 3)
(Note 3)
290
454
9
89
W
mJ
A
°C
Operating Junction and Storage Temperature Range
- 55 to +150
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL
R
ӨJC
R
ӨJA
TO-220
0.43
62.5
ITO-220
1.4
UNIT
°C/W
°C/W
Notes:
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air.
Document Number: DS_P0000159
1
Version: B15
TSM9N90E
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Static
(Note 4)
CONDITIONS
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±30V, V
DS
= 0V
V
DS
= 900V, V
GS
= 0V
V
GS
= 10V, I
D
= 4.5A
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(on)
Q
g
MIN
900
2.0
--
--
--
TYP
--
--
--
--
1.13
MAX
--
4.0
±100
10
1.4
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Dynamic
(Note 5)
V
V
µA
µA
Ω
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
(Note 6)
--
--
--
--
--
--
72
11
31
2470
192
27
--
--
--
--
--
--
pF
nC
V
DS
= 720V, I
D
= 9.0A,
V
GS
= 10V
Q
gs
Q
gd
C
iss
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
oss
C
rss
t
d(on)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.
2.
3.
4.
5.
6.
Current limited by package
Pulse width limited by the maximum junction temperature
L = 10.6mH, I
AS
= 9A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25 C
o
--
--
--
--
52
97
212
159
--
--
--
--
ns
V
DD
= 450V,
R
GEN
= 25Ω,
I
D
= 9.0A, V
GS
= 10V,
(Note 4)
t
r
t
d(off)
t
f
I
S
= 9.0A, V
GS
= 0V
V
GS
= 0V, I
S
= 9A,
dI
F
/dt = 100A/us
V
SD
t
fr
Q
fr
--
--
--
--
570
6.6
1.5
--
--
V
ns
μC
100% Eas Test Condition: L = 10.6mH, I
AS
= 4.5A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25 C
Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
For DESIGN AID ONLY, not subject to production testing.
Switching time is essentially independent of operating temperature.
o
Document Number: DS_P0000159
2
Version: B15
TSM9N90E
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TSM9N90ECZ C0G
TSM9N90ECI C0G
PACKAGE
TO-220
ITO-220
PACKING
50pcs / Tube
50pcs / Tube
Document Number: DS_P0000159
3
Version: B15
TSM9N90E
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: DS_P0000159
4
Version: B15
TSM9N90E
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Drain Current vs. Case Temperature
BV
DSS
vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (TO-220)
Maximum Safe Operating Area (ITO-220)
Document Number: DS_P0000159
5
Version: B15
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