TSM4N80
Taiwan Semiconductor
N-Channel Power MOSFET
800V, 4A, 3.0Ω
FEATURES
●
●
●
Low R
DS(ON)
3Ω (Max.)
Low gate charge typical @ 20nC (Typ.)
Improve dV/dt capability
KEY PERFORMANCE PARAMETERS
PARAMETER
V
DS
R
DS(on)
(max)
Q
g
VALUE
800
3.0
20
UNIT
V
Ω
nC
APPLICATION
●
●
Power Supply
Lighting
TO-220
ITO-220
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
SYMBOL
V
DS
V
GS
T
C
= 25°C
T
C
= 100°C
I
D
I
DM
P
DTOT
E
AS
I
AS
E
AR
dV/dt
T
J
, T
STG
TO-220 ITO-220
800
±30
4
2.5
16
123
76
4
12.3
4.5
- 55 to +150
38.7
UNIT
V
V
A
A
W
mJ
A
mJ
V
°C
(Note 2)
Total Power Dissipation @ T
C
= 25°C
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
(Note 7)
(Note 3)
(Note 3)
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL
R
ӨJC
R
ӨJA
TO-220 ITO-220
1.01
62.5
3.23
UNIT
°C/W
°C/W
Notes:
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000108
1
Version: D15
TSM4N80
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Static
(Note 4)
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
(Note 5)
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±30V, V
DS
= 0V
V
DS
= 700V, V
GS
= 0V
V
GS
= 10V, I
D
= 1.2A
V
DS
= 30V, I
D
= 1.2A
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(on)
g
fs
Q
g
800
2.0
--
--
--
--
--
--
--
--
2.5
7.1
--
4.0
±100
10
3.0
--
V
V
nA
µA
Ω
S
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching
(Note 6)
--
--
--
--
--
--
--
20
3.7
8.2
955
80
13
--
--
--
--
--
--
--
3
Ω
pF
nC
V
DS
= 640V, I
D
= 4.0A,
V
GS
= 10V
Q
gs
Q
gd
C
iss
C
oss
C
rss
R
g
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
F = 1MHz, open drain
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.
2.
3.
4.
5.
6.
7.
Current limited by package
Pulse width limited by the maximum junction temperature
L = 10mH, I
AS
= 4.0A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25 C
Pulse test: PW
≤
300µs, duty cycle
≤
2%
For DESIGN AID ONLY, not subject to production testing.
Switching time is essentially independent of operating temperature.
I
SD
≤
8A, dI/dt
≤
200A/uS, Vdd
≤
BV
DSS
, Starting T
J
= 25 C.
o
o
t
d(on)
V
DD
= 400V,
R
GEN
= 25Ω,
I
D
= 4.0A, V
GS
= 10V,
(Note 4)
--
--
--
--
49
38
146
50
--
--
--
--
ns
t
r
t
d(off)
t
f
I
S
= 4.0A, V
GS
= 0V
V
GS
= 0V, I
S
= 4A
dI
F
/dt = 100A/µs
V
SD
t
rr
Q
rr
--
--
--
--
487
2.8
1.5
--
--
V
ns
µC
Document Number: DS_P0000108
2
Version: D15
TSM4N80
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TSM4N80CZ C0G
TSM4N80CI C0G
PACKAGE
TO-220
ITO-220
PACKING
50pcs / Tube
50pcs / Tube
Note:
1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
2. Halogen-free according to IEC 61249-2-21 definition
Document Number: DS_P0000108
3
Version: D15
TSM4N80
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: DS_P0000108
4
Version: D15
TSM4N80
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Drain Current vs. Case Temperature
BV
DSS
vs. Junction Temperature
Maximum Safe Operating Area (TO-220)
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (ITO-220)
Document Number: DS_P0000108
5
Version: D15
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