VS-CPH3006L-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 2 x 15 A FRED Pt
®
Base
common
cathode
2
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Designed and qualified according to commercial
qualification
3
2
1
1
Anode
3
Anode
• Material categorization:
for definitions of compliance
www.vishay.com/doc?99912
please
see
TO-247 long lead
3
pins
2
Common
cathode
DESCRIPTIONS / APPLICATIONS
VS-CPH30... series are the state of the art hyperfast
recovery rectifiers designed with optimized performance of
forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-247 long lead 3 pins
2 x 15 A
600 V
1.25 V
21 ns
175 °C
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current per leg
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 142 °C
T
J
= 25 °C
TEST CONDITIONS
MAX.
600
30
230
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
I
R
= 100 μA
I
F
= 15 A
I
F
= 15 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
TEST CONDITIONS
MIN.
600
-
-
-
-
-
TYP.
-
1.8
1.25
0.01
20
20
MAX.
-
2.45
1.6
15
200
-
µA
pF
V
UNITS
Reverse leakage current
Junction capacitance
Revision: 10-Jul-15
Document Number: 95711
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-CPH3006L-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
TYP.
21
25
29
65
3.9
7.0
60
240
MAX.
-
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to case per package
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-247 long lead 3-pins
SYMBOL
T
J
, T
Stg
TEST CONDITIONS
MIN.
-65
-
R
thJC
-
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and greased
-
-
-
-
6.0
(5.0)
0.55
-
0.4
6.0
0.21
-
0.7
°C/W
40
-
-
-
12
(10)
g
oz.
kgf cm
(lbf
in)
TYP.
-
1.1
MAX.
175
1.4
UNITS
°C
CPH3006L
Revision: 10-Jul-15
Document Number: 95711
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-CPH3006L-M3
www.vishay.com
Vishay Semiconductors
1000
100
175 °C
150 °C
10
1
0.1
0.01
25 °C
0.001
0.0001
125 °C
100 °C
75 °C
50 °C
I
F
- Instantaneous Forward Current (A)
100
10
T
J
= 150 °C
T
J
= 25 °C
1
0.5
I
R
- Reverse Current (μA)
T
J
= 175 °C
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
10
1
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.0001
0.001
0.01
0.1
1
0.01
0.00001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 10-Jul-15
Document Number: 95711
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-CPH3006L-M3
www.vishay.com
Vishay Semiconductors
100
90
180
Allowable Case Temperature (°C)
160
DC
140
Square
wave (D = 0.50)
80 % rated V
R
applied
80
70
I
F
= 15 A, 125 °C
t
rr
(ns)
60
50
40
30
20
10
100
Typical value
1000
I
F
= 15 A, 25 °C
120
See
note
(1)
100
0
5
10
15
20
25
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
dI
F
dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
30
RMS limit
25
20
15
10
5
0
0
5
10
15
20
25
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
600
500
400
I
F
= 15 A, 125 °C
Average Power Loss (W)
Q
rr
(nC)
300
200
100
Typical value
0
100
1000
I
F
= 15 A, 25 °C
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dI
F
dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Revision: 10-Jul-15
Document Number: 95711
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-CPH3006L-M3
www.vishay.com
Vishay Semiconductors
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
1
C
2
-
-
-
-
-
-
-
-
P
3
H
4
30
5
06
6
L
7
-M3
8
1
2
3
4
5
6
7
8
Vishay Semiconductors product
Circuit configuration:
C = common cathode
P = TO-247
H = hyperfast recovery time
Current code (30 = 2 x 15 A)
Voltage code (06 = 600 V)
L = long lead
Environmental digit:
-M3 = halogen-free, RoHS-compliant and termination lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-CPH3006L-M3
QUANTITY PER T/R
30
MINIMUM ORDER QUANTITY
300
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247 3-pins LL
TO-247 3-pins LL
www.vishay.com/doc?95599
www.vishay.com/doc?95593
Revision: 10-Jul-15
Document Number: 95711
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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