PESD2IVN27-T
6 March 2018
ESD protection for In-vehicle networks
Product data sheet
1. General description
ESD protection device in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package designed to protect two automotive In-vehicle network bus lines from the damage caused
by ElectroStatic discharge (ESD) and other transients.
2. Features and benefits
•
•
•
•
•
•
•
•
Reverse stand-off voltage: V
RWM
= 27 V
Low clamping voltage: V
CL
= 36 V at I
PP
= 3 A
Typ. diode capacitance matching: ∆C
d
/C
d
= 0.1 %
ESD protection up to 30 kV (IEC 61000-4-2)
ESD protection up to 30 kV (ISO 10605; C = 330 pF, R = 330 Ω)
ISO 7637-3: Pulse a: V
S
= -150 V / Pulse b: V
S
= +100 V
Ultra low leakage current: I
RM
< 1 nA
Qualified according to AEC-Q101 / Automotive grade
3. Applications
ESD protection for In-vehicle network lines in automotive enviroments
•
•
•
•
CAN
LIN
FlexRay
SENT
4. Quick reference data
Table 1. Quick reference data
Symbol
V
RWM
I
PPM
V
CL
[1]
[2]
Parameter
reverse standoff
voltage
rated peak pulse
current
clamping voltage
Conditions
T
amb
= 25 °C
t
p
= 8/20 µs
I
PPM
= 3 A; t
p
= 8/20 µs; T
amb
= 25 °C
[1] [2]
[1] [2]
Min
-
-
-
Typ
-
-
36
Max
27
3
45
Unit
V
A
V
Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 or 2 to pin 3.
Nexperia
PESD2IVN27-T
ESD protection for In-vehicle networks
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
Symbol Description
K1
K2
CC
cathode (diode 1)
cathode (diode 2)
common cathode
1
2
Simplified outline
3
Graphic symbol
K1
CC
K2
006aaa155
TO-236AB (SOT23)
6. Ordering information
Table 3. Ordering information
Type number
PESD2IVN27-T
Package
Name
TO-236AB
Description
Version
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23
mm x 1.3 mm x 1 mm body
7. Marking
Table 4. Marking codes
Type number
PESD2IVN27-T
[1]
% = placeholder for manufacturing site code
Marking code[1]
T3%
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
PPM
T
j
T
amb
T
stg
Parameter
rated peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20 µs
[1] [2]
Min
-
-
-55
-65
Max
3
150
150
150
Unit
A
°C
°C
°C
PESD2IVN27-T
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
6 March 2018
2 / 13
Nexperia
PESD2IVN27-T
ESD protection for In-vehicle networks
Symbol
V
ESD
Parameter
electrostatic discharge
voltage
Conditions
IEC 61000-4-2; contact discharge
[2] [3]
Min
-
-
-
Max
30
30
30
Unit
kV
kV
kV
ESD maximum ratings
ISO 10605; contact discharge; C = 330 pF,
[2] [3]
R = 330 Ω
ISO 10605; contact discharge; C = 150 pF,
[2] [3]
R = 330 Ω
[1]
[2]
[3]
Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 or 2 to pin 3.
Device stressed with ten non-repetitive ESD pulses.
120
I
PP
(%)
80
100 % I
PP
; 8 µs
001aaa630
001aaa631
I
PP
100 %
90 %
e
-t
50 % I
PP
; 20 µs
40
10 %
0
0
10
20
30
40
t (µs)
t
r
= 0.6 ns to 1 ns
30 ns
60 ns
t
Fig. 1.
8/20 µs pulse waveform according to
IEC 61000-4-5
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD2IVN27-T
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
6 March 2018
3 / 13
Nexperia
PESD2IVN27-T
ESD protection for In-vehicle networks
9. Characteristics
Table 6. Characteristics
Symbol
V
RWM
V
BR
I
RM
C
d
ΔC
d
/C
d
V
CL
Parameter
reverse standoff
voltage
breakdown voltage
reverse leakage
current
diode capacitance
diode capacitance
matching
clamping voltage
Conditions
T
amb
= 25 °C
I
R
= 10 mA; T
amb
= 25 °C
V
RWM
= 27 V; T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
f = 1 MHz; V
R
= 2.5 V; T
amb
= 25 °C
I
PPM
= 1 A; t
p
= 8/20 µs; T
amb
= 25 °C
I
PPM
= 3 A; t
p
= 8/20 µs; T
amb
= 25 °C
I
PP
= 16 A; t
p
= TLP; T
amb
= 25 °C
R
dyn
[1]
[2]
[3]
[4]
Min
-
[1]
[1]
[1]
[2]
[2]
[3] [1]
[3] [1]
[4] [1]
[4] [1]
28
-
-
-
-
-
-
-
-
Typ
-
33
1
13
0.1
0.1
34
36
35
0.25
Max
27
38
50
17
-
-
43
45
-
-
Unit
V
V
nA
pF
%
%
V
V
V
Ω
dynamic resistance
I
R
= 10 A; T
amb
= 25 °C
Measured from pin 1 or 2 to pin 3.
∆C
d
is the difference of the capacitance measured between pin 1 and pin 3 and the capacitance measured between pin 2 and pin 3.
Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.
Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008
I
PP
14
aaa-028239
C
d
(pF)
12
10
- V
CL
- V
BR
- V
RWM
I
R
I
RM
- I
RM
- I
R
V
RWM
V
BR
V
CL
8
6
4
-
+
2
- I
PP
006aaa676
0
-30
-15
15
V
R
(V)
30
Fig. 3.
V-I characteristics for a bidirectional ESD
protection diode
Fig. 4.
Diode capacitance as a function of reverse
voltage; typical values
PESD2IVN27-T
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
6 March 2018
4 / 13
Nexperia
PESD2IVN27-T
ESD protection for In-vehicle networks
I
PP
(A)
90
80
70
60
50
40
30
20
10
0
0
10
20
30
R
dyn
= 0.24 Ω
aaa-028240
0
I
PP
(A)
-10
-20
-30
-40
-50
-60
-70
-80
R
dyn
= 0.26 Ω
aaa-028241
40
V
CL
(V)
50
-90
-50
-40
-30
-20
-10
0
V
CL
(V)
t
p
= 100 ns; Transmission Line Pulse (TLP)
Fig. 5.
10
2
P
PP
(W)
t
p
= 100 ns; Transmission Line Pulse (TLP)
Fig. 6.
Negative clamping voltage (TLP); typical values
1.2
P
PP
P
PP(25°C)
0.8
001aaa193
Positive clamping voltage (TLP); typical values
aaa-027494
10
0.4
1
10
-1
1
t
p
(ms)
10
0
0
50
100
150
T
j
(°C)
200
Fig. 7.
Peak pulse power as a function of exponential
pulse duration; typical values
Fig. 8.
Relative variation of peak pulse power as a
function of junction temperature; typical values
PESD2IVN27-T
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
6 March 2018
5 / 13
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