BC817-40W
45 V, 0.5 A, General
Purpose NPN Transistor
ON Semiconductor’s BC817−40W is a General Purpose NPN
Transistor that is housed in the SC−70/SOT−323 package.
Features
www.onsemi.com
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
Thermal Resistance,
Junction−to−Ambient (Note 1)
Junction and Storage Temperature
Range
Symbol
P
D
R
qJA
T
J
, T
stg
Max
460
272
−55 to +150
Unit
mW
°C/W
°C
SC−70
CASE 419
STYLE 3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Board, 1 oz. Cu, 100 mm
2
CE
M
G
CE MG
G
1
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
BC817−40WT1G
NSVBC817−40WT1G
Package
SC−70
(Pb−Free)
SC−70
(Pb−Free)
Shipping
3000 / Tape &
Reel
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
May, 2016 − Rev. 2
Publication Order Number:
BC817−40W/D
BC817−40W
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 10 mA)
Collector −Emitter Breakdown Voltage
(V
EB
= 0 V, I
C
= 10
mA)
Emitter −Base Breakdown Voltage
(I
E
= 1.0
mA)
Collector Cutoff Current
(V
CB
= 20 V)
(V
CB
= 20 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain (Note 2)
(I
C
= 100 mA, V
CE
= 1.0 V)
(I
C
= 500 mA, V
CE
= 1.0 V)
Collector −Emitter Saturation Voltage (Note 2)
(I
C
= 500 mA, I
B
= 50 mA)
Base −Emitter On Voltage (Note 2)
(I
C
= 500 mA, V
CE
= 1.0 V)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 V, f = 100 MHz)
Output Capacitance
(V
CB
= 10 V, f = 1.0 MHz)
f
T
C
obo
100
−
−
10
−
−
MHz
pF
h
FE
250
40
V
CE(sat)
V
BE(on)
−
−
−
−
−
−
600
−
0.7
1.2
V
V
−
V
(VR)CEO
V
(VR)CES
V
(VR)EBO
I
CBO
−
−
−
−
100
5.0
nA
mA
45
50
5.0
−
−
−
−
−
−
V
V
V
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Condition: Pulse Width = 300
msec,
Duty Cycle
≤
2%
www.onsemi.com
2
BC817−40W
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
D
e1
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
H
E
1
2
E
b
e
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
A
0.05 (0.002)
A2
L
c
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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coverage may be accessed at
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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For additional information, please contact your local
Sales Representative
www.onsemi.com
5
BC817−40W/D
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