33 standard frequencies between 7.3728 MHz and 48 MHz
Supply voltage of 1.8V or 2.5V to 3.3V
Operating temperature from -40°C to 125°C. For -55°C option, refer
to
SiT8920
and
SiT8921
Excellent total frequency stability as low as ±20 ppm
Low power consumption of 3.4 mA typical at 1.8V
LVCMOS/LVTTL compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Instant samples with
Time Machine II
and
field programmable
oscillators
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
For AEC-Q100 oscillators, refer to
SiT8924
and
SiT8925
Industrial, medical, automotive, avionics and other high
temperature applications
Industrial sensors, PLC, motor servo, outdoor networking
equipment, medical video cam, asset tracking systems, etc.
Electrical Specifications
Table 1. Electrical Characteristics
[1, 2]
Parameters
Output Frequency Range
Symbol
f
Min.
Typ.
Max.
Unit
MHz
Condition
Refer to
Table 13
for the exact list of supported frequencies
Frequency Range
33 standard frequencies between
7.3728 MHz and 48 MHz
-20
-25
-30
-50
Operating Temperature Range
(ambient)
T_use
-40
-40
Vdd
1.62
2.25
2.52
2.7
2.97
2.25
Current Consumption
Idd
–
–
–
OE Disable Current
Standby Current
I_od
I_std
–
–
–
–
–
Duty Cycle
Rise/Fall Time
DC
Tr, Tf
45
–
–
–
Output High Voltage
VOH
90%
–
–
–
–
–
–
1.8
2.5
2.8
3.0
3.3
–
3.8
3.6
3.4
–
–
2.6
1.4
0.6
–
1.0
1.3
1.0
–
+20
+25
+30
+50
+105
+125
1.98
2.75
3.08
3.3
3.63
3.63
4.5
4.2
4
4.1
3.8
8.5
5.5
3.5
55
2.0
2.5
3
–
Frequency Stability and Aging
Frequency Stability
F_stab
ppm
ppm
ppm
ppm
°C
°C
V
V
V
V
V
V
mA
mA
mA
mA
mA
A
A
A
%
ns
ns
ns
Vdd
No load condition, f = 20 MHz, Vdd = 2.8V, 3.0V or 3.3V
No load condition, f = 20 MHz, Vdd = 2.5V
No load condition, f = 20 MHz, Vdd = 1.8V
Vdd = 2.5V to 3.3V, OE = Low, output in high Z state.
Vdd = 1.8V, OE = Low, output in high Z state.
Vdd = 2.8V to 3.3V, ST = Low, Output is Weakly Pulled Down
Vdd = 2.5V, ST = Low, Output is Weakly Pulled Down
Vdd = 1.8V, ST = Low, Output is Weakly Pulled Down
All Vdds
Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
Vdd =1.8V, 20% - 80%
Vdd = 2.25V - 3.63V, 20% - 80%
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V or 2.5V)
IOH = -2 mA (Vdd = 1.8V)
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V or 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Extended Industrial
Automotive
Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply
voltage and load (15 pF ± 10%).
Operating Temperature Range
Supply Voltage and Current Consumption
Supply Voltage
LVCMOS Output Characteristics
Output Low Voltage
VOL
–
–
10%
Vdd
SiTime Corporation
Rev. 1.0
990 Almanor Avenue, Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised January 4, 2014
SiT1618
Standard Frequency, High Temperature Oscillator
The Smart Timing Choice
The Smart Timing Choice
Table 1. Electrical Characteristics
[1, 2]
(continued)
Parameters
Input High Voltage
Input Low Voltage
Input Pull-up Impedance
Symbol
VIH
VIL
Z_in
Min.
70%
–
50
2
Startup Time
Enable/Disable Time
Resume Time
RMS Period Jitter
Peak-to-peak Period Jitter
RMS Phase Jitter (random)
T_start
T_oe
T_resume
T_jitt
T_pk
T_phj
–
–
–
–
–
–
–
–
–
Typ.
–
–
87
–
–
–
–
1.6
1.9
12
14
0.5
1.3
Max.
–
30%
150
–
5
162
5
Jitter
2.5
4
20
30
0.8
2
ps
ps
ps
ps
ps
ps
f = 20 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
f = 20 MHz, Vdd = 1.8V
f = 20 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
f = 20 MHz, Vdd = 1.8V
f = 40 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
f = 40 MHz, Integration bandwidth = 12 kHz to 20 MHz
Unit
Vdd
Vdd
k
M
ms
ns
ms
Pin 1, OE or ST
Pin 1, OE or ST
Pin 1, OE logic high or logic low, or ST logic high
Pin 1, ST logic low
Measured from the time Vdd reaches 90% of final value
f = 48 MHz. For other frequencies, T_oe = 100 ns + 3 * clock
periods
Measured from the time ST pin crosses 50% threshold
Condition
Input Characteristics
Startup and Resume Timing
Note:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
2. The typical value of any parameter in the Electrical Characteristics table is specified for the nominal value of the highest voltage option for that parameter and at
25 °C temperature.
Table 2. Pin Description
Pin
Symbol
Output
Enable
1
OE/ ST/NC
Standby
No Connect
2
3
4
GND
OUT
VDD
Power
Output
Power
[3]
Functionality
H : specified frequency output
L: output is high impedance. Only output driver is disabled.
H
[3]
: specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
Any voltage between 0 and Vdd or Open
[2]
: Specified frequency
output. Pin 1 has no function.
Electrical ground
[4]
Oscillator output
Power supply voltage
[4]
GND
2
Top View
OE/ST/NC
1
4
VDD
3
OUT
Notes:
3. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven.
If pin 1 needs to be left floating, use the NC option.
4. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Figure 1. Pin Assignments
Rev. 1.0
Page 2 of 13
www.sitime.com
SiT1618
Standard Frequency, High Temperature Oscillator
The Smart Timing Choice
The Smart Timing Choice
N
Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the
IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
Vdd
Electrostatic Discharge
Soldering Temperature (follow standard Pb free soldering guidelines)
Junction Temperature
[5]
Min.
-65
-0.5
–
–
–
Max.
150
4
2000
260
150
Unit
°C
V
V
°C
°C
Note:
5. Exceeding this temperature for extended period of time may damage the device.
Table 4. Thermal Consideration
[6]
Package
7050
5032
3225
2520
2016
JA, 4 Layer Board
(°C/W)
142
97
109
117
152
JA, 2 Layer Board
(°C/W)
273
199
212
222
252
JC, Bottom
(°C/W)
30
24
27
26
36
Note:
6. Refer to JESD51 for
JA
and
JC
definitions, and reference layout used to determine the
JA
and
JC
values in the above table.
Table 5. Maximum Operating Junction Temperature
[7]
Max Operating Temperature (ambient)
105°C
125°C
Maximum Operating Junction Temperature
115°C
135°C
Note:
7. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 6. Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Rev. 1.0
Page 3 of 13
www.sitime.com
SiT1618
Standard Frequency, High Temperature Oscillator
The Smart Timing Choice
The Smart Timing Choice
Test Circuit and Waveform
[8]
Vdd
Vout
Test
Point
tr
80% Vdd
tf
4
Power
Supply
0.1µF
3
15pF
(including probe
and fixture
capacitance)
50%
20% Vdd
High Pulse
(TH)
Period
Low Pulse
(TL)
1
2
Vdd
OE/ST Function
1k
Figure 2. Test Circuit
Note:
8. Duty Cycle is computed as Duty Cycle = TH/Period.
Figure 3. Waveform
Timing Diagrams
90% Vdd
Vdd
50% Vdd
Vdd
Pin 4 Voltage
T_start
No Glitch
during start up
[9]
ST Voltage
T_resume
CLK Output
CLK Output
T_start: Time to start from power-off
T_resume: Time to resume from ST
Figure 4. Startup Timing (OE/ST Mode)
u
Figure 5. Standby Resume Timing (ST Mode Only)
Vdd
50% Vdd
OE Voltage
T_oe
OE Voltage
Vdd
50% Vdd
T_oe
CLK Output
CLK Output
HZ
T_oe: Time to re-enable the clock output
T_oe: Time to put the output in High Z mode
Figure 6. OE Enable Timing (OE Mode Only)
Note:
9. SiT1618 has “no runt” pulses and “no glitch” output during startup or resume.
Yamaha Motor Group旗下的i-PULSE有限公司日前已与华尔莱科技（Valor）结为合作伙伴关系，基于Valor的vPlan生产规划工具向i-PULSE组装设备的使用者提供完整的从设计到制造的NPI解决方案。在近期日本东京举办的Protec展会（6/11-6/13）上，i-PULSE首度展出了该新产品并将直接向其客户进行销售。 新产品的名称为“iPlan”，它将提供一系...[详细]
在全球半导体产业因景气不佳而纷传并购、整合之际，两大IT巨头三星、IBM日前却双双宣布，将强化半导体产业投资。 三星电子本周一宣布，已向韩国证券交易所提交一份申请文件，打算2008年投下10.5亿美元，用于升级内存芯片生产线、改进技术工艺，从而提高产能并降低成本。无独有偶。本周二IBM公司宣布，未来3年将投资10亿美元，用于扩充位于纽约州 East Fishkill 的半导体工厂，以消...[详细]
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
