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MXLSMBJ2K3.0E3

产品描述TVS DIODE 3V 5.4V DO214AA
产品类别分立半导体    二极管   
文件大小450KB,共6页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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MXLSMBJ2K3.0E3概述

TVS DIODE 3V 5.4V DO214AA

MXLSMBJ2K3.0E3规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Microsemi
零件包装代码DO-214AA
包装说明R-PDSO-J2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性HIGH RELIABILITY
最小击穿电压4.3 V
最大钳位电压5.4 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AA
JESD-30 代码R-PDSO-J2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散2000 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散1.38 W
认证状态Not Qualified
最大重复峰值反向电压3 V
表面贴装YES
技术AVALANCHE
端子面层MATTE TIN
端子形式J BEND
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

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MSMBG2K3.0 – MSMBG2K5.0,
MSMBJ2K3.0 – MSMBJ2K5.0
Available
2 kW Surface Mount
Transient Voltage Suppressor
DESCRIPTION
Screening in
reference to
MIL-PRF-19500
available
The MSMBG(J)2K3.0 – MSMBG(J)2K5.0 series of surface mount 2.0 kilowatt transient voltage
suppressors provide a selection of standoff voltages (V
WM
) from 3.0 to 5.0 volts. These high-
reliability controlled devices feature unidirectional construction. The SMBG Gull-wing design
in the DO-215AA package is ideal for visible solder connections. The SMBJ J-bend design in
the DO-214AA package is ideal for greater PC board mounting density. It is also available as
RoHS compliant.
DO-215AA
(SMBG) Package
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
High reliability upscreened devices with wafer fabrication and assembly lot traceability.
All devices 100% surge tested.
Suppresses transients up to 2 kW @ 8/20 µs.
Other screening in reference to MIL-PRF-19500 is also available. Refer to
MicroNote 129
for more
details on the screening options.
(See
part nomenclature
for all options.)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
3σ lot norm screening performed on standby current I
D
.
RoHS compliant versions available.
DO-214AA
(SMBJ) Package
NOTE: All SMB series are
equivalent to prior SMS package
identifications.
APPLICATIONS / BENEFITS
Voltage and reverse standby (leakage) current lowest available.
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.
Protection from switching transients & induced RF.
Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively.
Secondary lightning protection per IEC61000-4-5 with 42 ohms source impedance for class 1.
MAXIMUM RATINGS
@ 25 ºC unless otherwise stated
Parameters/Test Conditions
Junction and Storage Temperature
Peak Pulse Power Dissipation
Off-State Power Dissipation
T
clamping
(0 volts to V
(
BR)
min)
Forward Voltage @ 30 A
(3)
(1)
Symbol
T
J
and
T
STG
8/20 us
10/1000us
@ T
L
< 25 ºC
@ T
A
= 25 ºC
P
PP
P
D
Value
-65 to +150
2000
300
5
(2)
1.38
<100
1.2
260
Unit
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
W
W
ps
V
o
V
F
T
SP
Solder Temperature @ 10 s
C
Notes:
1. With impulse repetition rate (duty factor) of 0.01 maximum (also
Figure 1 and 4).
2. When mounted on FR4 PC board (1oz Cu) with recommended footprint (see
last page).
3. Peak impulse of 8.3 ms half-sine wave.
RF01019, Rev. B (2/11/13)
©2013 Microsemi Corporation
Page 1 of 6
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