Ordering number : ENA0509B
EC3A04B
SANYO Semiconductors
DATA SHEET
N-Channel Junction Silicon FET
EC3A04B
Applicatins
•
Low-Frequency General-Purpose Amplifier,
Impedance Converter Applications
Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.
Features
•
•
•
•
Small IGSS.
Small Ciss.
Ultraminiature package facilitates miniaturization in end products.
Halogen free compliance (UL94HB).
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Conditions
Ratings
30
--30
10
10
100
150
--55 to +150
Unit
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
Symbol
V(BR)GDS
IGSS
VGS(off)
Conditions
IG=-
-10μA, VDS=0V
VGS=-
-20V, VDS=0V
VDS=10V, ID=1μA
Ratings
min
--30
--1.0
--0.18
--0.65
--2.2
typ
max
Unit
V
nA
V
Marking : KC
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
21209 MS IM TC-00001840 / 41608 TI IM TC-00001316 / 70407GB TI IM TC-00000742 No. A0509-1/4
EC3A04B
Continued from preceding page.
Parameter
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-State Resistance
Symbol
IDSS
⏐
yfs
⏐
Ciss
Crss
RDS(on)
Conditions
VDS=10V, VGS=0V
VDS=10V, VGS=0V, f=1kHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10mV, VGS=0V
Ratings
min
0.6*
3.0
5.0
4
1.1
200
typ
max
3.0*
Unit
mA
mS
pF
pF
Ω
*
: The EC3A04B is classified by IDSS as follows : (unit : mA).
Rank
2
3
IDSS
0.6 to 1.5
1.2 to 3.0
Package Dimensions
unit : mm (typ)
7039A-004
0.6
Polarity discriminating mark
3
2
1.0
1
0.5
0.025
0.5
1
0.65
0.25
3
0.35
2
0.15
1 : Gate
2 : Source
3 : Drain
SANYO : ECSP1006-3
Type No. Indication
(Top view)
Electrical Connection
(Top view)
Polarity mark (Top)
KC
Polarity mark (Top)
Source
Gate
Drain
Source
*Electrodes : Bottom
Drain
Gate
No. A0509-2/4
EC3A04B
3.0
ID -- VDS
3.0
ID -- VDS
VGS=0V
--0.1V
--0.2V
--0.3V
--0.4V
2.5
2.5
Drain Current, ID -- mA
2.0
VGS=0V
--0.1V
--0.2V
Drain Current, ID -- mA
5
2.0
1.5
1.5
1.0
1.0
--0.3V
0.5
--0.4V
0.5
0
0
1
2
3
4
0
0
5
10
15
20
25
30
IT11451
5
Drain-to-Source Voltage, VDS -- V
IT11450
5
ID -- VGS
Drain-to-Source Voltage, VDS -- V
ID -- VGS
VDS=10V
VDS=10V
4
4
Drain Current, ID -- mA
=
SS
ID
mA
2.0
mA
1.0
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
IT11452
m
3.0
A
2
Ta
=
--2
5
°
C
3
3
2
1
C
75
°
1
0
--1.2
--1.0
--0.8
--0.6
°
C
25
--0.4
--0.2
0
0
ITR00636
Gate-to-Source Voltage, VGS -- V
2
VGS(off) -- IDSS
Gate-to-Source Voltage, VGS -- V
2
⏐
y
fs⏐ -- ID
Forward Transfer Admittance,
⏐
y
fs⏐ -- mS
VDS=10V
ID=1.0
μ
A
VDS=10V
f=1kHz
A
3.0m
10
7
5
3
2
Cutoff Voltage, VGS(off) -- V
--1.0
7
5
mA
=2.0
I DSS
A
1.0m
1.0
7
5
3
2
0.1
2
3
5
7
2
3
5
IT11454
3
2
5
7
1.0
2
3
5
IT11453
1.0
Drain Current, IDSS -- mA
2
⏐
y
fs⏐ -- IDSS
Drain Current, ID -- mA
100n
IGDL -- VDS
Forward Transfer Admittance,
⏐
y
fs⏐ -- mS
Gate-to-Drain Leak Current, IGDL -- A
VDS=10V
VGS=0V
f=1kHz
3
10n
3
1n
3
100p
3
10p
3
1p
5
IGDL
10
7
5
G
D
S
ID
DC
DC
3
2
1.0
5
7
1.0
2
3
5
IT11455
ID=1mA
0
5
10
15
20
25
ITR00640
Drain Current, IDSS -- mA
Drain-to-Source Voltage, VDS -- V
No. A0509-3/4
Drain Current, ID -- mA
EC3A04B
10
Ciss -- VDS
VGS=0V
f=1MHz
Output Capacitance, Crss -- pF
5
Crss -- VDS
VGS=0V
f=1MHz
7
Input Capacitance, Ciss -- pF
3
5
2
3
2
1.0
7
1.0
5
7
1.0
2
3
5
7
10
2
3
5
5
5
7
1.0
2
3
5
7
10
2
3
5
Drain-to-Source Voltage, VDS -- V
120
IT11456
PD -- Ta
Drain-to-Source Voltage, VDS -- V
IT11457
Allowable Power Dissipation, PD -- mW
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
ITR00646
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of February, 2009. Specifications and information herein are subject
to change without notice.
PS No. A0509-4/4
Mouser Electronics
Authorized Distributor
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:
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