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KSC1009 — NPN Epitaxial Silicon Transistor
September 2015
KSC1009
NPN Epitaxial Silicon Transistor
Features
• High Voltage Amplifier
• High Collector-Base Voltage : V
CBO
= 160 V
• Collector Current : I
C
= 700 mA
• Collector Power Dissipation : P
C
= 800 mW
• Complement to KSA709
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
• Non Suffix “-C” means Side Collector (1. Emitter 2. Base 3. Collector)
12
3
1
2
3
TO-92
1. Emitter
2. Base
3. Collector
Straight Lead
Bulk Packing
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
KSC1009YTA
Top Mark
C1009 Y-
Package
TO-92 3L
Packing Method
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
嵌入式系统
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