KSP8598/8599
KSP8598/8599
Amplifier Transistor
• Collector-Emitter Voltage: V
CEO
= KSP8598: 60V
KSP8599: 80V
• Collector Power Dissipation: P
C
(max)=625mW
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSP8598
: KSP8599
V
CEO
Collector-Emitter Voltage
: KSP8598
: KSP8599
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
1. Emitter 2. Base 3. Collector
Value
-60
-80
-60
-80
-5
-500
625
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
Parameter
Collector-Base Breakdown Voltage
: KSP8598
: KSP8599
* Collector-Emitter Breakdown Voltage
: KSP8598
: KSP8599
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KSP8598
: KSP8599
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
= -100µA, I
E
=0
Min.
-60
-80
I
C
= -10mA, I
B
=0
-60
-80
I
E
= -10µA, I
C
=0
V
CB
= -60V, I
E
=0
V
CB
= -80V, I
E
=0
V
CE
= -60V, I
B
=0
V
EB
= -4V, I
C
=0
V
CE
= -5V, I
C
= -1mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -100mA
I
C
= -100mA, I
B
= -5mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -5V, I
C
= -1mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -10mA
f=100MHz
V
CB
= -5V, I
E
=0
f=1MHz
-0.5
-0.6
150
8
100
100
75
-5
-100
-100
-100
-100
300
V
V
V
nA
nA
nA
nA
Max.
Units
V
V
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
: KSP8598
: KSP8599
Current Gain Bandwidth Product
Output Capacitance
-0.4
-0.3
-0.7
-0.8
V
V
V
V
MHz
pF
f
T
C
ob
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
KSP8598/8599
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
-10
I
C
= 10 I
B
V
CE
= -5V
h
FE
, DC CURRENT GAIN
-1
V
BE
(sat)
100
-0.1
V
CE
(sat)
10
-1
-10
-100
-1000
-0.01
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
1000
I
E
= 0
f = 1MHz
f
T
[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
V
CE
= -5V
C
ob
[pF], CAPACITANCE
10
100
1
-0.1
10
-1
-10
-100
-1
-10
-100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 3. Output Capacitance
Figure 4. Current Gain Bandwidth Product
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER™
FAST
®
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
