VS-6F(R) Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 6 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V V
RRM
DO-4 (DO-203AA)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
6A
DO-4 (DO-203AA)
Single
• Converters
• Power supplies
• Machine tool controls
• Battery charges
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
T
C
TEST CONDITIONS
VALUES
6
160
9.5
159
167
134
141
100 to 1200
-65 to +175
UNITS
A
°C
A
A
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
10
20
40
VS-6F(R)
60
80
100
120
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
100
200
400
600
800
1000
1200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
150
275
500
725
950
1200
1400
12
I
RRM
MAXIMUM
AT T
J
= 175 °C
mA
Revision: 11-Jan-18
Document Number: 93519
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6F(R) Series
www.vishay.com
Vishay Semiconductors
SYMBOL
I
F(AV)
I
F(RMS)
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
=
T
J
maximum
TEST CONDITIONS
180° conduction, half sine wave
VALUES
6
160
9.5
159
167
134
141
127
116
90
82
1270
0.63
0.86
15.7
5.6
1.10
A
2
s
V
m
V
A
2
s
A
UNITS
A
°C
A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one cycle forward,
non-repetitive surge current
I
FSM
Maximum I
2
t for fusing
I
2
t
Maximum
I
2
t
for fusing
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 19 A, T
J
= 25 °C, t
p
= 400 μs rectangular wave
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum forward voltage drop
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heat sink
Mounting torque, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Lubricated threads
(Not lubricated threads)
TEST CONDITIONS
VALUES
-65 to +175
-65 to +200
2.5
K/W
0.5
1.2
(1.5)
7
0.25
N·m
(lbf · in)
g
oz.
UNITS
°C
DO-4 (DO-203AA)
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.34
0.44
0.57
0.85
1.37
RECTANGULAR CONDUCTION
0.29
0.48
0.63
0.88
1.39
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93519
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6F(R) Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
175
6F(R) Series
R
thJC
(DC) = 2.5 K/W
170
Conduction Period
Maximum Allowable Case Temperature (°C)
175
6F(R) Series
R
thJC
(DC) = 2.5 K/W
170
Conduction Angle
165
165
160
90°
60°
30°
155
0
1
2
3
4
5
6
7
Average Forward Current (A)
120°
180°
160
60°
30°
155
0
2
4
6
8
10
Average Forward Current (A)
90°
120°
180°
DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W
)
6
5
4
3
2
1
0
0
1
2
180°
120°
90°
60°
30°
R
30
K/W
40 K
/W
th
SA
=
15
20
K/
W
K/
W
-D
elt
a
R
RMS Limit
50 K
/W
Conduction Angle
6F(R) Series
T = 175°C
J
3
4
5
0
6
25
50
75
100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
8
7
6
5
4
3 RMS Limit
Conduction Period
DC
180°
120°
90°
60°
30°
R
20
K/
W
th
SA
=
10
15
K/
W
K/
W
30
K/W
-D
el
ta
R
40 K
/W
50 K
/W
2
1
0
0
2
4
6
8
10
0
25
50
75
100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
6F(R) Series
T = 175°C
J
Fig. 4 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93519
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6F(R) Series
www.vishay.com
Vishay Semiconductors
1000
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
150
140
130
120
110
100
90
80
70
60
50
40
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 175°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
6F(R) Series
100
10
T = 25°C
J
T = 175°C
J
6F(R) Series
1
10
100
0
0.5
1
1.5
2
2.5
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
Peak Half Sine Wave Forward Current (A)
160
150
140
130
120
110
100
90
80
70
60
50
40
30
0.01
Transient Thermal Im
pedance Z
thJC
(K/W
)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T = 175°C
J
No Voltage Reapplied
Rated V
RRM
Reapplied
10
Steady State Value
RthJC = 2.5 K/W
(DC Operation)
1
6F(R) Series
6F(R) Series
0.1
0.001
0.1
Pulse Train Duration (s)
1
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
6
2
-
-
-
-
-
-
F
3
R
4
120
5
M
6
Vishay Semiconductors product
Current rating: code = I
F(AV)
F = standard device
None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
None = stud base DO-4 (DO-203AA) 10-32UNF-2A
M = stud base DO-4 (DO-203AA) M5 x 0.8
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95311
Revision: 11-Jan-18
Document Number: 93519
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-203AA (DO-4)
DIMENSIONS
in millimeters (inches)
3.30 (0.13)
4.00 (0.16)
0.8 ± 0.1
(0.03 ± 0.004)
+ 0.3
0
+ 0.01
(0.08
0
)
2
5.50 (0.22) MIN.
Ø 1.80 ± 0.20
(Ø 0.07 ± 0.01)
20.30 (0.80) MAX.
10.20 (0.40)
MAX.
3.50 (0.14)
R 0.40
R (0.02)
Ø 6.8 (0.27)
11.50 (0.45)
10.70 (0.42)
10/32" UNF-2A
For metric devices: M5 x 0.8
11 (0.43)
Document Number: 95311
Revision: 30-Jun-08
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
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