VSMY98545ADS
www.vishay.com
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
FEATURES
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•
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•
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Package type: surface mount
Double stack technology
Package form: power QFN
Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24
Peak wavelength:
λ
p
= 850 nm
Zener diode for ESD protection up to 2 kV
High radiant power
High radiant intensity
Angle of half intensity:
ϕ
= ± 45°
Designed for high drive currents: up to 1 A (DC) and up
to 5 A pulses
Low thermal resistance: R
thJP
= 9 K/W
Floor life: 168 h, MSL 3, according to J-STD-020
Lead (Pb)-free reflow soldering
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
As part of the
SurfLight
TM
portfolio, the VSMY98545ADS
is an infrared, 850 nm emitting diode based on surface
emitter technology with high radiant power and high speed,
molded in low thermal resistance SMD package with lens.
A 42 mil chip provides outstanding radiant intensity and
allows DC operation of the device up to 1 A. Superior ESD
characteristics are ensured by an integrated Zener diode.
APPLICATIONS
• Infrared illumination for CMOS cameras (CCTV)
• Illumination for cameras (3D gaming)
• Machine vision
PRODUCT SUMMARY
COMPONENT
VSMY98545ADS
I
e
(mW/sr)
630
ϕ
(deg)
± 45
λ
p
(nm)
850
t
r
(ns)
14
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
VSMY98545ADS
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
REMARKS
MOQ: 600 pcs, 600 pcs/reel
PACKAGE FORM
High power with lens
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction / pin
Rev. 1.0, 29-Nov-16
According to Fig. 7, J-STD-20
JESD 51
t
p
/T = 0.5, t
p
=
100 μs
t
p
= 100 μs
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJP
VALUE
5
1
2
5
3.5
115
-40 to +85
-55 to +100
260
9
UNIT
V
A
A
A
W
°C
°C
°C
°C
K/W
Document Number: 84390
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY98545ADS
www.vishay.com
Vishay Semiconductors
4.0
P
V
- Power Dissipation (W)
3.0
2.5
2.0
1.5
1.0
0.5
0
R
thJA
= 9 K/W
I
F
- Forward Current (A)
3.5
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
0
20
40
60
80
100
R
thJA
= 9 K/W
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
T
amb
- Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
φ
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
I
F
= 1 A
I
F
= 1 A
I
F
= 1 A, t
p
= 20 ms
I
F
= 1 A
I
F
= 1 A
TEST CONDITION
I
F
= 1 A, t
p
= 20 ms
I
F
= 1 A
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
mW/cm
2
I
F
= 1 A, t
p
= 20 ms
I
F
= 1 A, t
p
= 20 ms
I
F
= 1 A, t
p
= 20 ms
I
R
C
J
I
e
φ
e
TK
φ
ϕ
λ
p
Δλ
TK
λp
t
r
t
f
SYMBOL
V
F
MIN.
-
-
-
-
400
-
-
-
830
-
-
-
-
TYP.
3.1
-3
-
130
630
1340
-0.3
± 45
850
35
0.3
14
17
MAX.
3.5
-
10
-
-
-
-
-
870
-
-
-
-
UNIT
V
mV/K
μA
pF
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
I
e,rel
- Relative Radiant Intensity (%)
10 000
1000
t
p
= 100 μs
I
F
- Forward Current (mA)
t
p
= 100 μs
1000
100
100
10
10
2.0
3.0
4.0
5.0
1
10
100
1000
V
F
- Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
I
F
- Forward Current (mA)
Fig. 4 - Relative Radiant Intensity vs. Forward Current
Rev. 1.0, 29-Nov-16
Document Number: 84390
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY98545ADS
www.vishay.com
Vishay Semiconductors
0°
10°
20°
30°
I
e, rel
- Relative Radiant Intensity (%)
100
90
80
70
60
50
40
30
20
10
0
700
750
800
850
900
950
0.6
0.4
0.2
0
I
F
= 1.0 A
I
e, rel
- Relative Radiant Intensity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
λ
- Wavelength (nm)
Fig. 5 - Relative Radiant Intensity vs. Wavelength
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
TAPING DIMENSIONS
in millimeters
Ø 60.0 ± 1.0
(2.36 ± 0.039)
Ø 13.0
(0.512)
typ.
Ø 178 ± 2.0
(7.0 ± 0.08)
14.40 (0.57) typ.
Notes
• Empty component pockets sealed with top cover tape.
• 7 inch reel - 600 pieces per reel.
• The maximum number of consecutive missing lamps is two.
• In accordance with ANSI/EIA 481-1-A-1994 specifications.
8.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
Ø 1.50 + 0.10
Cathode
1.75 ± 0.10
5.50 ± 0.05
12.00 + 0.30
- 0.10
Ø 1.50 + 0.25
Rev. 1.0, 29-Nov-16
Document Number: 84390
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
VSMY98545ADS
www.vishay.com
PACKAGE DIMENSIONS
in millimeters
1.90
Cathode
Vishay Semiconductors
3.85 ± 0.1
Anode
3.85 ± 0.1
1.00
2.80
R1
0.40 ± 0.05
0.15 ± 0.05
.3
8
.1
5
Notes
• Tolerance is ± 0.10 mm (0.004") unless otherwise noted.
• Specifications are subject to change without notice.
0.5
1.0
2.24 ± 0.1
R0
2.8
Rev. 1.0, 29-Nov-16
Document Number: 84390
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
2.8
2.70
Ø2
.76
VSMY98545ADS
www.vishay.com
SOLDER PROFILE
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
10
s
max.
255 °C to 260 °C
3 °C/s max.
6 °C/s max.
Vishay Semiconductors
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 3, according to J-STD-020B
60
s
max.
Temperature
217 °C
200 °C
150 °C
3 °C/s max.
60
s
to 120
s
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
22932
Time
Fig. 7 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
Rev. 1.0, 29-Nov-16
Document Number: 84390
5
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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