TBAT54,TBAT54A,TBAT54C,TBAT54S
Schottky Barrier Diode
Silicon Epitaxial
TBAT54,TBAT54A,TBAT54C,TBAT54S
1. Applications
•
Ultra-High-Speed Switching
2. Packaging
SOT23
3. Marking
TBAT54
Part Number Marking Code
TBAT54
TBAT54A
TBAT54C
TBAT54S
TL4
TV3
TW1
TV4
TBAT54A
TBAT54C
TBAT54S
Configuration
single
common anode
common cathode
series
Start of commercial production
©2016-2017
Toshiba Electronic Devices & Storage Corporation
1
2016-04
2017-11-17
Rev.2.0
TBAT54,TBAT54A,TBAT54C,TBAT54S
4. Internal Circuit
TBAT54
TBAT54A
TBAT54C
TBAT54S
5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
Peak reverse voltage
Reverse voltage
Average rectified current
Peak forward current
Non-repetitive peak forward surge current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
P
D
T
j
T
stg
(Note 3)
(Note 3)
(Note 1), (Note 3)
(Note 2), (Note 3)
Note
Rating
35
30
200
300
1
320
150
-55 to 150
A
mW
mA
Unit
V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Measured with a 10 ms pulse.
Note 2: Mounted on an FR4 board (25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 0.42 mm
2
×
3)
Note 3: Unit rating. Total rating = unit rating
×
1.5 (TBAT54A,TBAT54C), Total rating = unit rating
×
0.7 (TBAT54S)
Note:
©2016-2017
Toshiba Electronic Devices & Storage Corporation
2
2017-11-17
Rev.2.0
TBAT54,TBAT54A,TBAT54C,TBAT54S
6. Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Forward voltage
Symbol
V
F
Test Condition
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
Reverse current
Reverse recovery time
I
R
t
rr
V
R
= 25 V
I
F
= 10 mA
Min
Typ.
0.16
0.21
0.28
0.37
0.45
0.6
1.5
Max
0.32
0.39
0.50
0.58
2
µA
ns
Unit
V
Fig. 6.1 Reverse recovery time (t
rr
) test circuit
7. Usage Considerations
•
Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
©2016-2017
Toshiba Electronic Devices & Storage Corporation
3
2017-11-17
Rev.2.0
TBAT54,TBAT54A,TBAT54C,TBAT54S
8. Characteristics Curves (Note)
Fig. 8.1 I
F
- V
F
Fig. 8.2 I
R
- V
R
Fig. 8.3 C
t
- V
R
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2016-2017
Toshiba Electronic Devices & Storage Corporation
4
2017-11-17
Rev.2.0
TBAT54,TBAT54A,TBAT54C,TBAT54S
Package Dimensions
Unit: mm
Weight: 0.009 g (typ.)
Package Name(s)
Nickname: SOT23
©2016-2017
Toshiba Electronic Devices & Storage Corporation
5
2017-11-17
Rev.2.0
NXP MCU
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