VS-16TTS08S-M3, VS-16TTS12S-M3 Series
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage, Surface Mount Phase Control SCR, 16 A
2, 4
Anode
FEATURES
• Meets MSL level 1, per
LF maximum peak of 245 °C
• Designed
and
®
-JESD 47
JEDEC
qualified
J-STD-020,
according
2
1
3
1
Cathode
3
Gate
• Material categorization: for definitions of
compliance please see
www.vishay.com/doc?99912
D
2
PAK (TO-263AB)
APPLICATIONS
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
10 A
800 V, 1200 V
1.4 V
60 mA
-40 °C to 125 °C
D
2
PAK (TO-263AB)
Single SCR
DESCRIPTION
The VS-16TTS..S-M3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
NEMA FR-4 or G-10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
Aluminum IMS, R
thCA
= 15 °C/W
Aluminum IMS with heatsink, R
thCA
= 5 °C/W
Note
• T
A
= 55 °C, T
J
= 125 °C, footprint 300 mm
2
SINGLE-PHASE BRIDGE
2.5
6.3
14.0
THREE-PHASE BRIDGE
3.5
9.5
18.5
A
UNITS
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
RMS
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
10 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
10
16
800 to 1200
200
1.4
500
150
-40 to +125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-16TTS08S-M3
VS-16TTS12S-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1200
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
1200
I
RRM
/I
DRM
AT 125 °C
mA
10
Revision: 04-Jan-18
Document Number: 96412
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16TTS08S-M3, VS-16TTS12S-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
SYMBOL
I
T(AV)
I
RMS
I
TSM
I
2
t
I
2
t
V
TM
r
t
V
T(TO)
I
RM
/I
DM
I
H
I
L
dV/dt
dI/dt
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
10 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
Anode supply = 6 V, resistive load, initial I
T
= 1 A,
T
J
= 25 °C
Anode supply = 6 V, resistive load,T
J
= 25 °C
T
J
= T
J
max. linear to 80 % V
DRM
= R
g
- k = open
-
200
500
150
V/μs
A/μs
V
R
= rated V
RRM
/V
DRM
TEST CONDITIONS
T
C
= 98 °C, 180° conduction, half sine wave
VALUES
TYP.
MAX.
10
16
170
200
144
200
2000
1.4
24.0
1.1
0.5
10
150
mA
A
2
s
A
2
s
V
m
V
A
UNITS
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum required DC gate current to trigger
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GM
Anode supply = 6 V, resistive load, T
J
= - 10 °C
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Anode supply = 6 V, resistive load, T
J
= - 10 °C
Maximum required DC gate voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
V
GT
V
GD
I
GD
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
T
J
= 125 °C, V
DRM
= Rated value
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
90
60
35
3.0
2.0
1.0
0.25
2.0
mA
V
mA
UNITS
W
A
V
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
0.9
4
110
μs
UNITS
Revision: 04-Jan-18
Document Number: 96412
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16TTS08S-M3, VS-16TTS12S-M3 Series
www.vishay.com
Vishay Semiconductors
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
junction to ambient
Approximate weight
Marking device
Case style D
2
PAK (TO-263AB)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
DC operation
PCB mount
(1)
TEST CONDITIONS
VALUES
-40 to +125
1.3
°C/W
40
2
0.07
16TTS08S
16TTS12S
g
oz.
UNITS
°C
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994
Maximum Allowable Case Temperature (°C)
120
115
110
105
100
95
90
0
2
16TTS.. Series
R
thJC
(DC) = 1.3 °C/W
Max imum Average On-state Power Loss (W)
125
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10 11
Average On-state Current (A)
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
30°
60°
90°
120°
180°
4
6
8
10
12
16TTS.. Series
T
J
= 125°C
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Max imum Average On-state Power Loss (W)
125
Maximum Allowable Case Temperature (°C)
120
115
Conduction Period
25
DC
180°
120°
90°
60°
30°
16TTS.. Series
R
thJC
(DC) = 1.3 °C/W
20
110
105
100
95
90
0
2
4
6
8
10
12
14
16
Average On-state Current (A)
30°
15
RMS Limit
10
Conduction Period
60°
90°
120°
180° DC
5
16TTS.. Series
T
J
= 125°C
0
2
4
6
8
10
12
14
16
18
0
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
Revision: 04-Jan-18
Document Number: 96412
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16TTS08S-M3, VS-16TTS12S-M3 Series
www.vishay.com
Vishay Semiconductors
Peak Half Sine Wave Forward Current (A)
200
180
160
140
120
100
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= 125°C
No Voltage Reapplied
Rated V
RRM
Reapplied
Peak Half Sine Wave On-state Current (A)
180
160
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
140
120
100
16TTS..Series
80
1
10
100
Number Of Equal Amplitude Half C ycle Current Pulses (N)
16TTS.. Series
80
0.01
0.1
Pulse Train Duration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
16TTS.. Series
Instantaneous On-state Current (A)
100
10
T
J
= 25°C
T
J
= 125°C
1
0
1
2
3
4
5
Instantaneous On-st ate Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Transient Thermal Impedance Z
thJC
(°C/W)
10
Steady State Value
(DC Operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
16TTS.. Series
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 04-Jan-18
Document Number: 96412
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16TTS08S-M3, VS-16TTS12S-M3 Series
www.vishay.com
100
Vishay Semiconductors
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5
µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(b)
TJ = -10 °C
TJ = 25 °C
TJ = 125 °C
1
VGD
IGD
0.1
0.001
0.01
(4)
(3)
(2)
(1)
16TTS.. Series
0.1
1
Frequency Limited by PG(AV)
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
8
16
2
-
-
-
-
-
-
-
-
T
3
T
4
S
5
12
6
S
7
TRL -M3
8
9
Vishay Semiconductors product
Current rating
Circuit configuration:
T = single thyristor
Package:
T = D
2
PAK (TO-263AB)
Type of silicon:
S = standard recovery rectifier
Voltage rating: voltage code x 100 = V
RRM
S = surface mountable
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
08 = 800 V
12 = 1200 V
9
-
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-16TTS08S-M3
VS-16TTS08STRR-M3
VS-16TTS08STRL-M3
VS-16TTS12S-M3
VS-16TTS12STRR-M3
VS-16TTS12STRL-M3
QUANTITY PER T/R
50
800
800
50
800
800
MINIMUM ORDER QUANTITY
1000
800
800
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?96164
www.vishay.com/doc?95444
www.vishay.com/doc?96424
Revision: 04-Jan-18
Document Number: 96412
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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