Datasheet> 器件分类 > 分立半导体> 晶体管> RN1962FE(TE85L,F)

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RN1962FE(TE85L,F): 产品描述TRANS 2NPN PREBIAS 0.1W ES6; 产品类别分立半导体晶体管; 文件大小568KB，共8页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/; 标准

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RN1962FE(TE85L,F)概述

TRANS 2NPN PREBIAS 0.1W ES6

RN1962FE(TE85L,F)规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Toshiba(东芝)
包装说明	,
Reach Compliance Code	unknown
最大集电极电流 (IC)	0.1 A
最小直流电流增益 (hFE)	50
元件数量	2
极性/信道类型	NPN
最大功率耗散 (Abs)	0.1 W
表面贴装	YES
晶体管元件材料	SILICON

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RN1961FE~RN1966FE

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1961FE, RN1962FE, RN1963FE

RN1964FE, RN1965FE, RN1966FE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (6 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

•

Complementary to RN2961FE to RN2966FE

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN1961FE

RN1962FE

RN1963FE

RN1964FE

RN1965FE

RN1966FE

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

JEITA

TOSHIBA

Weight: 3mg (typ.)

―

2-2N1A

Absolute Maximum Ratings

(Ta = 25°C)

(Q1, Q2 common)

Characteristics

Collector-base voltage

Collector-emitter voltage

RN1961FE

to 1966FE

RN1961FE

to 1964FE

RN1965FE

RN1966FE

Symbol

CBO

CEO

Rating

EBO

RN1961FE

to 1966FE

(Note 1)

stg

100

150

−55

to150

°C

Unit

Equivalent Circuit

(top view)

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Start of commercial production

2000-05

2014-03-01

RN1962FE(TE85L,F)相似产品对比

	RN1962FE(TE85L,F)	RN1961FE(TE85L,F)	RN1964FE(TE85L,F)	RN1966FE(TE85L,F)	RN1965FE(TE85L,F)	RN1963FE(TE85L,F)
描述	TRANS 2NPN PREBIAS 0.1W ES6	TRANS 2NPN PREBIAS 0.1W ES6	TRANS 2NPN PREBIAS 0.1W ES6	TRANS 2NPN PREBIAS 0.1W ES6	TRANS 2PNP PREBIAS 0.1W ES6	TRANS 2NPN PREBIAS 0.1W ES6
是否Rohs认证	符合	符合	符合	符合	符合	符合
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
厂商名称	Toshiba(东芝)	-	Toshiba(东芝)	-	Toshiba(东芝)	Toshiba(东芝)
最大集电极电流 (IC)	0.1 A	-	0.1 A	0.1 A	0.1 A	0.1 A
最小直流电流增益 (hFE)	50	-	80	80	80	70
元件数量	2	-	2	2	2	2
极性/信道类型	NPN	-	NPN	NPN	NPN	NPN
最大功率耗散 (Abs)	0.1 W	-	0.1 W	0.1 W	0.1 W	0.1 W
表面贴装	YES	-	YES	YES	YES	YES
晶体管元件材料	SILICON	-	SILICON	SILICON	SILICON	SILICON

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