HMC442LC3B
v03.0514
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 25.5 GHz
Typical Applications
Features
Gain: 13 dB
Saturated Power: +23 dBm @ 26% PAE
Supply Voltage: +5V
50 Ohm Matched Input/Output
RoHS Compliant 3 x 3 mm SMT package
LINEAR & POWER AMPLIFIERS - SMT
The HMC442LC3B is an ideal gain block or driver
amplifier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• LO Driver for HMC Mixers
• Military EW & ECM
Functional Diagram
General Description
The HMC442LC3B is an efficient GaAs PHEMT
MMIC Medium Power Amplifier housed in a leadless
“Pb free” RoHS compliant SMT package. Operating
between 17.5 and 25.5 GHz, the amplifier provides
13 dB of gain, +23 dBm of saturated power and 26%
PAE from a +5V supply voltage. This 50 Ohm matched
amplifier does not require any external components,
making it an ideal linear gain block or driver for HMC
SMT mixers. The HMC442LC3B allows the use of
surface mount manufacturing techniques.
Electrical Specifications,
T
A
= +25° C, Vdd = +5V, Idd = 84 mA*
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)(Vdd = 5V, Vgg = -1V Typ.)
18
10
Min.
Typ.
17.5 - 21.0
13
0.02
10
9
21
23
27
8
84
19
0.03
10
Max.
Min.
Typ.
21.0 - 24.0
13
0.02
10
9
22
23.5
26
8
84
19
0.03
8
Max.
Min.
Typ.
24.0 - 25.5
11
0.02
5
12
22
23
26
9
84
0.03
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
*Adjust Vgg between -1.5 to -0.5V to achieve Idd = 84 mA typical.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and
Drive,
orders: Analog Devices, Inc.,
For price, delivery and to place orders:
infringements of patents or
Corporation, 2 Elizabeth
to place
Chelmsford, MA 01824
responsibility is assumed by Analog Devices for its use, nor for any
Hittite Microwave
other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373
Phone: 781-329-4700
www.hittite.com
Order On-line at
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Application Support: Phone: 978-250-3343 or apps@hittite.com
1
HMC442LC3B
v03.0514
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 25.5 GHz
Broadband Gain & Return Loss
15
10
RESPONSE (dB)
5
0
-5
-10
-15
-20
14
17
20
23
26
29
FREQUENCY (GHz)
4
S21
S11
S22
Gain vs. Temperature
20
16
12
8
+25C
+85C
-40C
0
16
17
18
19
20
21
22
23
24
25
26
27
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25C
+85C
-40C
Output Return Loss vs. Temperature
0
-4
RETURN LOSS (dB)
-4
RETURN LOSS (dB)
-8
-8
-12
-12
+25C
+85C
-40C
-16
-16
-20
16
17
18
19
20
21
22
23
24
25
26
27
FREQUENCY (GHz)
-20
16
17
18
19
20
21
22
23
24
25
26
27
FREQUENCY (GHz)
P1dB vs. Temperature
30
Psat vs. Temperature
30
26
P1dB (dBm)
Psat (dBm)
26
22
22
+25C
+85C
-40C
18
+25C
+85C
-40C
18
14
14
10
16
17
18
19
20
21
22
23
24
25
26
27
FREQUENCY (GHz)
10
16
17
18
19
20
21
22
23
24
25
26
27
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and
Drive,
orders: Analog Devices, Inc.,
For price, delivery and to place orders:
infringements of patents or
Corporation, 2 Elizabeth
to place
Chelmsford, MA 01824
responsibility is assumed by Analog Devices for its use, nor for any
Hittite Microwave
other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373
Phone: 781-329-4700
www.hittite.com
Order On-line at
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - SMT
2
GAIN (dB)
HMC442LC3B
v03.0514
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 25.5 GHz
Power Compression @ 18 GHz
28
Pout (dBm), GAIN (dB), PAE (%)
Power Compression @ 23 GHz
28
Pout (dBm), GAIN (dB), PAE (%)
24
20
16
12
8
4
0
-10
LINEAR & POWER AMPLIFIERS - SMT
24
20
16
12
8
4
0
-10
Pout
Gain
PAE
Pout
Gain
PAE
-6
-2
2
6
10
14
-6
-2
2
6
10
14
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature
34
Noise Figure vs. Temperature
12
10
NOISE FIGURE (dB)
8
6
4
2
0
+25C
+85C
-40C
30
Psat (dBm)
26
22
+25C
+85C
-40C
18
14
16
17
18
19
20
21
22
23
24
25
26
27
FREQUENCY (GHz)
16
17
18
19
20
21
22
23
24
25
26
27
FREQUENCY (GHz)
Gain, Power and Output IP3 vs.
Supply Voltage @ 23 GHz
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
30
25
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
16
17
18
19
20
21
22
23
24
25
26
27
FREQUENCY (GHz)
20
15
10
5
0
4.5
GAIN
P1dB
Psat
IP3
+25C
+85C
-40C
5
Vdd Supply Voltage (Vdc)
5.5
3
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and
Drive,
orders: Analog Devices, Inc.,
For price, delivery and to place orders:
infringements of patents or
Corporation, 2 Elizabeth
to place
Chelmsford, MA 01824
responsibility is assumed by Analog Devices for its use, nor for any
Hittite Microwave
other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373
Phone: 781-329-4700
www.hittite.com
Order On-line at
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC442LC3B
v03.0514
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 25.5 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
RF Input Power (RFIN)(Vdd = +5Vdc,
Idd = 85 mA)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 5.46 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Vdc
-8.0 to 0 Vdc
+16 dBm
175 °C
0.491 W
183 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
Note: Amplifier will operate over full voltage range shown above
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
+5.0
+5.5
Idd (mA)
84
86
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30 - 80 MICROINCHES GOLD
OVER 50 MICROINCHES MINIMUM NICKEL.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Package Information
Part Number
HMC442LC3B
Package Body Material
Alumina, White
Lead Finish
Gold over Nickel
MSL Rating
MSL3
[1]
Package Marking
[2]
H442
XXXX
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and
Drive,
orders: Analog Devices, Inc.,
For price, delivery and to place orders:
infringements of patents or
Corporation, 2 Elizabeth
to place
Chelmsford, MA 01824
responsibility is assumed by Analog Devices for its use, nor for any
Hittite Microwave
other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373
Phone: 781-329-4700
www.hittite.com
Order On-line at
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Application Support: Phone: 978-250-3343 or apps@hittite.com
LINEAR & POWER AMPLIFIERS - SMT
4
82
HMC442LC3B
v03.0514
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 17.5 - 25.5 GHz
Pin Descriptions
Pin Number
Function
GND
Description
Package bottom must also be connected to RF/DC ground
Interface Schematic
LINEAR & POWER AMPLIFIERS - SMT
1, 3, 7, 9
2
RFIN
This pin is AC coupled
and matched to 50 Ohms.
This pin may be connected to RF/DC ground.
Performance will not be affected.
4, 6, 10, 12
N/C
5
Vgg
Gate control for amplifier. Adjust to achieve Id of 84 mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note.
8
RFOUT
This pin is AC coupled
and matched to 50 Ohms.
11
Vdd
Power Supply Voltage for the amplifier. External bypass
capacitors are required.
Application Circuit
Component
C1, C2
C3, C4
C5, C6
Value
100 pF
1,000 pF
2.2 µF
5
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and
Drive,
orders: Analog Devices, Inc.,
For price, delivery and to place orders:
infringements of patents or
Corporation, 2 Elizabeth
to place
Chelmsford, MA 01824
responsibility is assumed by Analog Devices for its use, nor for any
Hittite Microwave
other
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373
Phone: 781-329-4700
www.hittite.com
Order On-line at
• Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Application Support: Phone: 978-250-3343 or apps@hittite.com
消费电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
