NXP Semiconductors
Technical Data
Document Number: MRF085H
Rev. 1, 10/2017
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
MRF085H
This high ruggedness device is designed for use in high VSWR industrial,
scientific and medical applications and sub--GHz aerospace and defense and
mobile radio applications. Its unmatched input and output design allows for
wide frequency range use from 1.8 to 1215 MHz.
Typical Performance:
V
DD
= 50 Vdc
Frequency
(MHz)
30–520
(1,2)
520
(3)
Signal Type
CW
CW
P
out
(W)
50 CW
85 CW
G
ps
(dB)
14.0
25.6
D
(%)
40.0
73.3
1.8–1215 MHz, 85 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
Load Mismatch/Ruggedness
Frequency
(MHz)
520
(3)
Signal Type
CW
VSWR
> 65:1
at all Phase
Angles
P
in
(W)
0.56
(3 dB
Overdrive)
Test
Voltage
50
Result
No Device
Degradation
NI-
-650H-
-4L
1. Measured in 30–520 MHz broadband reference circuit.
2. The values shown are the minimum measured performance numbers across the
indicated frequency range.
3. Measured in 520 MHz narrowband test circuit (page 5).
Gate A
3
1 Drain A
Features
Unmatched input and output allowing wide frequency range utilization
Device can be used single--ended or in a push--pull configuration
Characterized from 30 to 50 V for ease of use
Suitable for linear application
Integrated ESD protection with greater negative gate--source voltage range
for improved Class C operation
Typical Applications
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma etching
– Particle accelerators
– Industrial heating, welding and drying systems
Broadcast
– Radio broadcast
– VHF TV broadcast
Aerospace
– VHF omnidirectional range (VOR)
– HF and VHF communications
– Weather radar
Mobile radio
– VHF and UHF radios
Gate B
4
2 Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
2017 NXP B.V.
MRF085H
1
RF Device Data
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Total Device Dissipation @ T
C
= 25C
Derate above 25C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
D
Value
--0.5, +133
--6.0, +10
50, +0
--65 to +150
--40 to +150
--40 to +225
235
1.18
Value
(2,3)
0.85
Unit
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW: Case Temperature 85C, 85 W CW, 50 Vdc, I
DQ(A+B)
= 100 mA, 520 MHz
Symbol
R
JC
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Charge Device Model (per JESD22--C101)
Class
2, passes 2000 V
C2, passes 500 V
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 50 mA)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(4)
(V
DS
= 10 Vdc, I
D
= 85
Adc)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D(A+B)
= 100 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(4)
(V
GS
= 10 Vdc, I
D
= 210 mAdc)
Dynamic Characteristics
(4)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
1.
2.
3.
4.
C
rss
C
oss
C
iss
—
—
—
0.17
14.7
39.0
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.5
2.0
—
2.0
2.6
0.27
3.0
3.3
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
133
—
—
—
—
—
—
400
—
2
7
nAdc
Vdc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at
http://www.nxp.com/RF/calculators.
Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
Each side of device measured separately.
(continued)
MRF085H
2
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Power Gain
Drain Efficiency
Input Return Loss
Frequency
(MHz)
520
Signal
Type
CW
Symbol
G
ps
D
IRL
P
in
(W)
0.56
(3 dB Overdrive)
Min
24.0
70.0
—
Typ
25.6
73.3
–21
Max
28.0
—
–9
Unit
dB
%
dB
Functional Tests
(In NXP Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ(A+B)
= 100 mA, P
out
= 85 W CW, f = 520 MHz
Load Mismatch/Ruggedness
(In NXP Test Fixture, 50 ohm system) I
DQ
= 150 mA
VSWR
> 65:1
at all Phase Angles
Test Voltage, V
DD
50
Result
No Device
Degradation
Table 5. Ordering Information
Device
MRF085HR3
MRF085HR5
Tape and Reel Information
R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel
R5 Suffix = 50 Units, 44 mm Tape Width, 13--inch Reel
NI--650H--4L
NI--650H--4L
Package
MRF085H
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
100
C
iss
C
oss
10
Measured with
30
mV(rms)ac
@ 1 MHz, V
GS
= 0 Vdc
1
C
rss
0.1
0
10
20
30
40
50
1.04
NORMALIZED V
GS(Q)
1.02
1.00
0.98
0.96
0.94
–50
100 mA
200 mA
300 mA
1.06
I
DQ(A+B)
= 20 mA
V
DD
= 50 Vdc
C, CAPACITANCE (pF)
–25
0
I
DQ
(mA)
20
100
200
300
25
50
75
100
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
T
C
, CASE TEMPERATURE (C)
Slope (mV/C)
–2.35
–1.88
–1.78
–1.59
Note:
Each side of device measured separately.
Figure 2. Capacitance versus Drain-
-Source Voltage
Figure 3. Normalized V
GS
versus Quiescent
Current and Case Temperature
10
8
I
D
= 1.86 Amps
V
DD
= 50 Vdc
10
7
MTTF (HOURS)
10
6
I
D
= 2.59 Amps
I
D
= 2.34 Amps
10
5
10
4
90
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (C)
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at
http:/www.nxp.com/RF/calculators.
Figure 4. MTTF versus Junction Temperature – CW
MRF085H
4
RF Device Data
NXP Semiconductors
520 MHz NARROWBAND PRODUCTION TEST FIXTURE – 4.0
5.0 (10.2 mm
12.7 mm)
C10 C11
B1
C1
Coax1
L3
MRF085H
Rev. 0
D93611
C9
L5
C12
Coax3
C13
C2
C3
C5
L1
C8
C14
C15
C16
C17
C23
C4
L4
L2
CUT OUT AREA
Coax2
C6
C7
B2
L6
C18
C19
Coax4
C20 C21
C22
Figure 5. MRF085H Narrowband Test Circuit Component Layout – 520 MHz
Table 6. MRF085H Narrowband Test Circuit Component Designations and Values – 520 MHz
Part
B1, B2
C1, C7
C2, C6, C9, C18
C3, C4
C5
C8
C10, C20
C11, C21
C12, C19
C13, C22
C14, C15, C16, C17
C23
Coax1, 2, 3, 4
L1, L2, L5, L6
L3, L4
PCB
Short RF Bead
22
F,
35 V Tantalum Capacitor
240 pF Chip Capacitor
51 pF Chip Capacitor
36 pF Chip Capacitor
5.1 pF Chip Capacitor
10 pF Chip Capacitor
0.01
F
Chip Capacitor
0.1
F
Chip Capacitor
220
F,
100 V Electrolytic Capacitor
120 pF Chip Capacitor
5.6 pF Chip Capacitor
25
,
Semi Rigid Coax, 2.4” Shield Length
2.5 nH Inductor, 1 Turn
22 nH Inductor, 7 Turns
Arlon AD255A, 0.030,
r
= 2.55
Description
Part Number
2743019447
T491X226K035AT
ATC100B241JT200XT
ATC100B510GT500XT
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ATC100B5R1CT500XT
ATC200B103KT50XT
C1825C103K1GACTU
C1812F104K1RACTU
MCGPR100V227M16X26-RH
ATC100B121JT300XT
ATC100B5R6CT500XT
UT141-25
A01TKLC
B07TJLC
D93611
Manufacturer
Fair-Rite
Kemet
ATC
ATC
ATC
ATC
ATC
Kemet
Kemet
Multicomp
ATC
ATC
Precision Tube Company
Coilcraft
Coilcraft
MTL
MRF085H
RF Device Data
NXP Semiconductors
5
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