CET3904E NPN
CET3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
COMPLEMENTARY TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CET3904E
and CET3906E Low VCE(SAT) NPN and PNP
transistors, respectively, are designed for applications
where ultra small size and power dissipation are
the prime requirements. Packaged in an SOT-883L
surface mount package, these components provide
performance characteristics suitable for the most
demanding size constrained applications.
MARKING CODES: CET3904E: C
CET3906E: D
APPLICATIONS:
• DC-DC converters
• Battery powered devices including cell phones
and digital cameras
SOT-883L CASE
FEATURES:
• Device is
Halogen Free
by design
• 250mW power dissipation
• Low VCE(SAT) 0.1V TYP @ 50mA
• Small, TLP™ 1x0.4mm, SOT-883L leadless,
low profile, surface mount package
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
Thermal Resistance (Note 2)
ELECTRICAL
SYMBOL
ICEV
BVCBO
BVCEO
BVEBO
CHARACTERISTICS:
(TA=25°C)
TEST CONDITIONS
VCE=30V, VEB=3.0V
IC=10µA
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ
JA
Θ
JA
NPN
TYP
115
60
7.5
0.057
0.100
0.75
0.85
60
40
6.0
200
250
430
-65 to +150
500
290
PNP
TYP
90
55
7.9
0.050
0.100
0.75
0.85
0.100
0.200
0.85
0.95
UNITS
V
V
V
mA
mW
mW
°C
°C/W
°C/W
♦
♦
MIN
60
40
6.0
♦
MAX
50
UNITS
nA
V
V
V
V
V
V
V
♦
♦
VCE(SAT)
♦
VCE(SAT)
VBE(SAT)
VBE(SAT)
0.65
♦
Enhanced specification
Notes: 1) FR-4 epoxy PC board, standard mounting conditions
.
2) FR-4 epoxy PC board with collector mounting pad area of 1 cm
2
.
R3 (25-September 2018)
CET3904E NPN
CET3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
COMPLEMENTARY TRANSISTORS
♦
♦
♦
ELECTRICAL CHARACTERISTICS
- Continued:
(TA=25°C)
SYMBOL
TEST CONDITIONS
hFE
hFE
hFE
hFE
hFE
fT
Cob
Cib
hie
hre
hfe
hoe
NF
td
tr
ts
tf
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=50mA
VCE=1.0V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=100μA, RS=1.0KΩ,
f=10Hz to 15.7kHz
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
MIN
90
100
100
70
30
300
NPN
TYP
240
235
215
110
50
PNP
TYP
130
150
150
120
55
MAX
UNITS
300
1.0
0.1
100
1.0
4.0
12
12
10
400
60
4.0
35
35
200
50
MHz
pF
pF
kΩ
x10
-4
μS
dB
ns
ns
ns
ns
♦
Enhanced specification
SOT-883L CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODES:
CET3904E: C
CET3906E: D
R3 (25-September 2018)
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nd
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REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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