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1N4006G: 产品描述SILICON, SIGNAL DIODE; 产品类别半导体分立半导体; 文件大小52KB，共1页; 制造商FCI [First Components International]

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1N4006G概述

SILICON, SIGNAL DIODE

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Data Sheet

250 mW EPITAXIAL

PLANAR DIODES

Mechanical Dimensions

JEDEC

D0-35

.060

.090

.120

.200

1.00 Min.

Description

1N914

.018

.022

Features

PLANAR PROCESS

250 mW POWER DISSIPATION

INDUSTRY STANDARD D0-35

PACKAGE

MEETS UL SPECIFICATION 94V-0

1N914

Maximum Ratings

Peak Reverse Voltage...V

RMS Reverse Voltage...V

R(rms)

Average Forward Rectified Current...I

Non-Repetitive Peak Forward Surge Current...I

FSM

Power Dissipation...P

Operating Temperature Range...T

Storage Temperature Range...T

STRG

Electrical Characteristics

Maximum Forward Voltage...V

@ I

= 100 mA

Maximum DC Reverse Current...I

@ V

= 70v

Maximum Frequency ...f

Maximum Diode Capacitance, V

= 6V, f = 1MHz...C

Maximum Reverse Recovery Time...t

.01 uF

= 100nS

5K Ohms

50 Ohms

= 50 Ohms

Page 8-2

1N914

Units

Volts

............................................. 100 ............................................... mAmps

............................................. 300 ............................................... mAmps

............................................. 250 ...............................................

°C

......................................... -25 to 85 ..........................................

°C

......................................... -55 to 125 ..........................................

............................................. 1.2 ...............................................

.............................................

0.1

100

3.5

4.0

Volts

...............................................

µAmps

............................................... MHz

...............................................

Test

Device Under Test

Output

Trr

0.1 I

1N4006G相似产品对比

	1N4006G	1N4002G	1N4004G	1N4003G	1N4007G	1N4005G
描述	SILICON, SIGNAL DIODE	SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	SIGNAL DIODE	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
状态	-	ACTIVE	DISCONTINUED	ACTIVE	ACTIVE	ACTIVE
二极管类型	-	SIGNAL DIODE	信号二极管	信号二极管	信号二极管	SIGNAL DIODE

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