Data Sheet
250 mW EPITAXIAL
PLANAR DIODES
Mechanical Dimensions
JEDEC
D0-35
.060
.090
.120
.200
1.00 Min.
Description
1N914
.018
.022
Features
n
PLANAR PROCESS
n
250 mW POWER DISSIPATION
n
INDUSTRY STANDARD D0-35
PACKAGE
n
MEETS UL SPECIFICATION 94V-0
1N914
Maximum Ratings
Peak Reverse Voltage...V
RM
RMS Reverse Voltage...V
R(rms)
Average Forward Rectified Current...I
O
Non-Repetitive Peak Forward Surge Current...I
FSM
Power Dissipation...P
D
Operating Temperature Range...T
J
Storage Temperature Range...T
STRG
Electrical Characteristics
Maximum Forward Voltage...V
F
@ I
F
= 100 mA
Maximum DC Reverse Current...I
R
@ V
R
= 70v
Maximum Frequency ...f
Maximum Diode Capacitance, V
R
= 6V, f = 1MHz...C
D
Maximum Reverse Recovery Time...t
RR
.01 uF
P
VV
= 100nS
5K Ohms
50 Ohms
R
G
= 50 Ohms
Page 8-2
1N914
80
80
Units
Volts
Volts
............................................. 100 ............................................... mAmps
............................................. 300 ............................................... mAmps
mW
............................................. 250 ...............................................
°C
......................................... -25 to 85 ..........................................
°C
......................................... -55 to 125 ..........................................
............................................. 1.2 ...............................................
.............................................
.............................................
.............................................
.............................................
0.1
100
3.5
4.0
Volts
...............................................
µAmps
............................................... MHz
pF
...............................................
ns
...............................................
Test
Device Under Test
Output
I
F
I
R
Trr
0.1 I
R
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
