1N6267A Series
1500 Watt Mosorbt Zener
Transient Voltage
Suppressors
Unidirectional
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high−energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Features
http://onsemi.com
Cathode
Anode
AXIAL LEAD
CASE 41A
PLASTIC
•
•
•
•
•
•
•
•
Working Peak Reverse Voltage Range
−
5.8 V to 214 V
Peak Power
−
1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 kV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
mA
Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
Pb−Free Packages are Available*
MARKING DIAGRAMS
A
1.5KE
xxxA
YYWWG
G
A
1N6
xxx
YYWWG
G
A
= Assembly Location
1.5KExxxA = ON Device Code
1N6xxx
= JEDEC Device Code
YY
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
260°C, 1/16 in from the case for 10 seconds
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
ORDERING INFORMATION
Device
1.5KExxxAG
1.5KExxxARL4G
1N6xxxAG
1N6xxxARL4G
Package
Axial Lead
(Pb−Free)
Axial Lead
(Pb−Free)
Axial Lead
(Pb−Free)
Axial Lead
(Pb−Free)
Shipping
†
500 Units/Box
1500/Tape & Reel
500 Units/Box
1500/Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2011
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
October, 2011
−
Rev. 13
1
Publication Order Number:
1N6267A/D
1N6267A Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T
L
≤
25°C
Steady State Power Dissipation
@ T
L
≤
75°C, Lead Length = 3/8 in
Derated above T
L
= 75°C
Thermal Resistance, Junction−to−Lead
Forward Surge Current (Note 2) @ T
A
= 25°C
Operating and Storage Temperature Range
Symbol
P
PK
P
D
Value
1500
5.0
20
R
qJL
I
FSM
T
J
, T
stg
20
200
−
65 to +175
Unit
W
W
mW/°C
°C/W
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 5 and derated above T
A
= 25°C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless
otherwise noted, V
F
= 3.5 V Max., I
F
(Note 3) = 100 A)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
QV
BR
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Temperature Coefficient of V
BR
Forward Current
Forward Voltage @ I
F
I
PP
V
C
V
BR
V
RWM
I
F
I
I
R
V
F
I
T
V
Uni−Directional TVS
http://onsemi.com
2
1N6267A Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3) = 100 A)
JEDEC
Device
†
(Note 4)
1N6267AG
−
1N6269AG
−
1N6271AG
−
−
1N6274AG
1N6275AG
1N6276AG
1N6277AG
1N6278AG
1N6279AG
1N6280AG
1N6281AG
1N6282AG
1N6283AG
1N6284AG
1N6285AG
1N6286AG
1N6287AG
1N6288A, G
1N6289AG
1N6290AG
1N6291AG
1N6292AG
−
1N6294AG
1N6295AG
V
RWM
(Note 5)
(Volts)
5.8
6.4
7.02
7.78
8.55
9.4
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53
58.1
64.1
70.1
77.8
85.5
Breakdown Voltage
I
R
@ V
RWM
(mA)
1000
500
200
50
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
V
BR
(Note 6)
(Volts)
Min
6.45
7.13
7.79
8.65
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95
Nom
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
Max
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21
23.1
25.2
28.4
31.5
34.7
37.8
41
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
@ I
T
(mA)
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
C
@ I
PP
(Note 7)
V
C
(Volts)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77
85
92
103
113
125
137
I
PP
(A)
143
132
124
112
103
96
90
82
71
67
59.5
54
49
45
40
36
33
30
28
25.3
23.2
21.4
19.5
17.7
16.3
14.6
13.3
12
11
QV
BR
(%/°C)
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.09
0.092
0.094
0.096
0.097
0.098
0.099
0.1
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
Device
†
1.5KE6.8AG
1.5KE7.5AG
1.5KE8.2AG
1.5KE9.1AG
1.5KE10AG
1.5KE11AG
1.5KE12AG
1.5KE13AG
1.5KE15AG
1.5KE16A, G
1.5KE18A, G
1.5KE20AG
−
1.5KE24AG
1.5KE27AG
1.5KE30AG
1.5KE33AG
1.5KE36AG
1.5KE39AG
1.5KE43AG
1.5KE47AG
1.5KE51AG
1.5KE56AG
1.5KE62AG
1.5KE68AG
1.5KE75AG
1.5KE82A, G
1.5KE91AG
−
Devices listed in
bold, italic
are ON Semiconductor Preferred devices.
Preferred
devices are recommended choices for future use and best overall value.
3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
4. Indicates JEDEC registered data
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which should be equal to or
greater than the dc or continuous peak operating voltage level.
6. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C
7. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
†The “G” suffix indicates Pb−Free package or Pb−Free packages are available.
http://onsemi.com
3
1N6267A Series
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
PPK , PEAK POWER (kW)
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25
°
C
100
100
80
60
40
20
0
0
25
50
75
100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
10
1
0.1
ms
1
ms
10
ms
100
ms
1 ms
10 ms
t
P
, PULSE WIDTH
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
10,000
MEASURED @
ZERO BIAS
10,000
MEASURED @
ZERO BIAS
1000
C, CAPACITANCE (pF)
MEASURED @ V
RWM
100
C, CAPACITANCE (pF)
1000
MEASURED @ V
RWM
100
10
1
10
100
1000
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
10
1
10
100
1000
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
Figure 3. Capacitance versus Breakdown Voltage
PD , STEADY STATE POWER DISSIPATION (WATTS)
t
r
3/8″
5
4
3
2
1
0
0
25
50
75
100 125 150 175
T
L
, LEAD TEMPERATURE (°C)
200
0
0
1
2
3/8″
IPP, VALUE (%)
100
PEAK VALUE - I
PP
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
PP
.
tr
≤
10
ms
HALF VALUE -
50
t
P
I
PP
2
3
4
t, TIME (ms)
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
http://onsemi.com
4
1N6267A Series
1000
500
IT , TEST CURRENT (AMPS)
200
100
50
20
10
5
2
1
0.3
0.5 0.7 1
2
3
5 7 10
20 30
DV
BR
, INSTANTANEOUS INCREASE IN V
BR
ABOVE V
BR(NOM)
(VOLTS)
180 V
120 V
T
L
= 25°C
t
P
= 10
ms
V
BR(NOM)
= 6.8 to 13 V
20 V
24 V
1
0.7
0.5
0.3
DERATING FACTOR
0.2
0.1
0.07
0.05
0.03
0.02
10
ms
0.01
0.1
0.2
0.5
1
2
5
10
D, DUTY CYCLE (%)
20
50 100
100
ms
PULSE WIDTH
10 ms
43 V
75 V
1 ms
Figure 6. Dynamic Impedance
Figure 7. Typical Derating Factor for Duty Cycle
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10
ms
pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
http://onsemi.com
5
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
