ZBT SRAM, 512KX36, 3.8ns, CMOS, PBGA119
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | SAMSUNG(三星) |
| 包装说明 | BGA, BGA119,7X17,50 |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| 最长访问时间 | 3.8 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PBGA-B119 |
| JESD-609代码 | e0 |
| 内存密度 | 18874368 bit |
| 内存集成电路类型 | ZBT SRAM |
| 内存宽度 | 36 |
| 湿度敏感等级 | 3 |
| 端子数量 | 119 |
| 字数 | 524288 words |
| 字数代码 | 512000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 512KX36 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | BGA |
| 封装等效代码 | BGA119,7X17,50 |
| 封装形状 | RECTANGULAR |
| 封装形式 | GRID ARRAY |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 260 |
| 电源 | 2.5 V |
| 认证状态 | Not Qualified |
| 最大待机电流 | 0.01 A |
| 最小待机电流 | 2.38 V |
| 最大压摆率 | 0.3 mA |
| 标称供电电压 (Vsup) | 2.5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | BALL |
| 端子节距 | 1.27 mm |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | 40 |
| Base Number Matches | 1 |
| K7N163645M-HC15T | K7N161845M-HC13T | K7N161845M-QC13T | K7N161845M-QC16T | K7N163645M-QC15T | K7N163645M-HC13T | K7N161845M-HC15T | K7N161845M-HC16T | K7N163645M-QC16T | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | ZBT SRAM, 512KX36, 3.8ns, CMOS, PBGA119 | ZBT SRAM, 1MX18, 4.2ns, CMOS, PBGA119 | ZBT SRAM, 1MX18, 4.2ns, CMOS, PQFP100 | ZBT SRAM, 1MX18, 3.5ns, CMOS, PQFP100 | ZBT SRAM, 512KX36, 3.8ns, CMOS, PQFP100 | ZBT SRAM, 512KX36, 4.2ns, CMOS, PBGA119 | ZBT SRAM, 1MX18, 3.8ns, CMOS, PBGA119 | ZBT SRAM, 1MX18, 3.5ns, CMOS, PBGA119 | ZBT SRAM, 512KX36, 3.5ns, CMOS, PQFP100 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 | QFP, QFP100,.63X.87 | QFP, QFP100,.63X.87 | QFP, QFP100,.63X.87 | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 | QFP, QFP100,.63X.87 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
| 最长访问时间 | 3.8 ns | 4.2 ns | 4.2 ns | 3.5 ns | 3.8 ns | 4.2 ns | 3.8 ns | 3.5 ns | 3.5 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PBGA-B119 | R-PBGA-B119 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 | R-PQFP-G100 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bi |
| 内存集成电路类型 | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM |
| 内存宽度 | 36 | 18 | 18 | 18 | 36 | 36 | 18 | 18 | 36 |
| 湿度敏感等级 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 端子数量 | 119 | 119 | 100 | 100 | 100 | 119 | 119 | 119 | 100 |
| 字数 | 524288 words | 1048576 words | 1048576 words | 1048576 words | 524288 words | 524288 words | 1048576 words | 1048576 words | 524288 words |
| 字数代码 | 512000 | 1000000 | 1000000 | 1000000 | 512000 | 512000 | 1000000 | 1000000 | 512000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 512KX36 | 1MX18 | 1MX18 | 1MX18 | 512KX36 | 512KX36 | 1MX18 | 1MX18 | 512KX36 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | BGA | BGA | QFP | QFP | QFP | BGA | BGA | BGA | QFP |
| 封装等效代码 | BGA119,7X17,50 | BGA119,7X17,50 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 | BGA119,7X17,50 | BGA119,7X17,50 | BGA119,7X17,50 | QFP100,.63X.87 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY | GRID ARRAY | FLATPACK | FLATPACK | FLATPACK | GRID ARRAY | GRID ARRAY | GRID ARRAY | FLATPACK |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 |
| 电源 | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A |
| 最小待机电流 | 2.38 V | 2.38 V | 2.38 V | 2.38 V | 2.38 V | 2.38 V | 2.38 V | 2.38 V | 2.38 V |
| 最大压摆率 | 0.3 mA | 0.28 mA | 0.28 mA | 0.32 mA | 0.3 mA | 0.28 mA | 0.3 mA | 0.32 mA | 0.32 mA |
| 标称供电电压 (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | BALL | BALL | GULL WING | GULL WING | GULL WING | BALL | BALL | BALL | GULL WING |
| 端子节距 | 1.27 mm | 1.27 mm | 0.635 mm | 0.635 mm | 0.635 mm | 1.27 mm | 1.27 mm | 1.27 mm | 0.635 mm |
| 端子位置 | BOTTOM | BOTTOM | QUAD | QUAD | QUAD | BOTTOM | BOTTOM | BOTTOM | QUAD |
| 处于峰值回流温度下的最长时间 | 40 | 40 | 40 | 40 | 40 | 40 | 40 | 40 | 40 |
| 厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | - | - | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
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