PD- 94546
IRF7335D1
• Co-Pack Dual N-channel HEXFET
Power MOSFET
and Schottky Diode
• Ideal for Synchronous Buck DC-DC
Converters Up to 11A Peak Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
Dual FETKY
Co-Packaged Dual MOSFET Plus Schottky Diode
Device Ratings (Typ.Values)
Q1
Q2
and Schottky
D1
D1
G1
G2
S2
S2
S2
1
2
3
4
5
6
7
Q2
Q1
14
13
12
11
10
9
8
S1, D2
S1, D2
S1, D2
S1, D2
S1, D2
S1, D2
S1, D2
R
DS
(on)
Q
G
Q
sw
V
SD
13.4 mΩ
13 nC
5.5 nC
1.0V
9.6 mΩ
18 nC
6.4 nC
0.43V
Description
The FETKY
™
family of Co-Pack HEXFET
MOSFETs and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and power management applications. Advanced
HEXFET
MOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable
for a wide variety of portable electronics applications.
The SO-14 has been modified through a customized leadframe for enhanced thermal characteristics and
multiple die capability making it ideal in a variety of power applications. With these improvements multiple
devices can be used in an application with dramatically reduced board space. Internal connections enable
easier board layout design with reduced stray inductance.
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
E
AS
(6 sigma)
T
J
T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
30
10
8.1
81
2.0
1.3
0.02
± 12
50
-55 to + 150
300 (1.6mm from case )
Units
V
A
W
W/°C
V
mJ
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
Max.
20
62.5
Units
°C/W
Notes
through
are on page 12
9/11/02
IRF7335D1
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
Breakdown Voltage
Tem. Coefficient
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
Current
Gate-Source Leakage
Current
Forward Transconductance
Total Gate Charge
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BV
DSS
Q1-Control FET
Min
30
Typ
Max
Q2-Synch FET
& Schottky
Min
30
0.033
Typ
Max Units
V
V
9.6
1.1
12.8
mΩ
V
30
10
±100
28
µA
mA
nA
S
18
5.8
1.5
4.9
6.4
11
nC
5.0
Ω
V
DD
= 16V, I
D
= 8.0A
ns
V
GS
= 4.5V
Clamped Inductive Load
V
DS
= 16V, V
GS
= 0
nC
27
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 4.5V, I
D
= 10A
V
DS
= V
GS
,I
D
= 250µA
V
DS
= 24V, V
GS
= 0
V
DS
= 24V, V
GS
= 0, Tj = 125°C
V
GS
= ±12V
V
GS
=5V, I
D
=8.0A, V
DS
=15V
V
GS
=4.5V, I
D
=8.0A, V
DS
=15V
∆BV
DSS/
∆T
J
0.025
R
DS
(on)
V
GS(th)
I
DSS
1.0
13.4
17.5
30
0.3
I
GSS
g
FS
Q
G
Q
GS1
Q
GS2
Q
GD
Q
sw
Q
oss
R
G
t
d (on)
t
r
t
d
t
f
C
iss
C
oss
C
rss
(off)
±100
21
13
3.2
1.4
4.1
5.5
7.7
4.3
6.8
5.9
19
9.1
1500
310
140
10
20
2.6
8.8
3.3
17
7.0
2300
450
180
pF
V
DS
= 15V, V
GS
= 0
Source-Drain Rating & Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulse Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
1
28
24
29
26
Min
Typ
Max
10
81
1.25
0.43
31
26
31
26
Min
Typ
Max Units
10
81
0.50
V
ns
nC
ns
nC
A
Conditions
MOSFET symbol
showing the
intergral reverse
p-n junction diode
G
S
D
T
J
= 25°C, I
S
= 1.0A,V
GS
= 0V
T
J
= 125°C, I
F
= 8.0A, V
R
= 15V
di/dt = 100A/µs
T
J
= 125°C, I
F
=8.0A, V
R
= 15V
di/dt =100A/µs
2
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IRF7335D1
Typical Characteristics
Q1 - Control FET
1000
VGS
10V
5.0V
4.5V
3.0V
2.7V
2.5V
2.2V
BOTTOM 2.0V
TOP
Q2 - Synchronous FET & Schottky
1000
VGS
12V
10V
8.0V
4.5V
3.5V
3.0V
2.5V
BOTTOM 2.25V
TOP
I D, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
10
10
1
1
2.0V
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
2.25V 20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
VGS
10V
5.0V
4.5V
3.0V
2.7V
2.5V
2.2V
BOTTOM 2.0V
TOP
Fig 2.
Typical Output Characteristics
100
VGS
12V
10V
8.0V
4.5V
3.5V
3.0V
2.5V
BOTTOM 2.25V
TOP
ID , Drain-to-Source Current (A)
100
ID , Drain-to-Source Current (A)
10
10
2.25V
1
2.0V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
100.0
Fig 4.
Typical Output Characteristics
100.0
T J = 150°C
ID , Drain-to-Source Current
(Α
)
ID , Drain-to-Source Current
(Α
)
10.0
T J = 150°C
10.0
1.0
T J = 25°C
1.0
T J = 25°C
0.1
0.0
2.0
2.5
3.0
VDS = 15V
20µs PULSE WIDTH
3.5
4.0
4.5
0.1
2.0
VDS = 15V
20µs PULSE WIDTH
3.0
4.0
VGS , Gate-to-Source Voltage (V)
VGS , Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
Fig 6.
Typical Transfer Characteristics
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3
IRF7335D1
Typical Characteristics
Q1 - Control FET
80
Q2 - Synchronous FET & Schottky
80
VGS
7.5V
4.5V
3.5V
2.5V
2.0V
1.5V
1.0V
BOTTOM
0.0V
TOP
ID Drain-to-Source Current (A)
60
TOP
VGS
7.5V
4.5V
3.5V
2.5V
2.0V
1.5V
1.0V
0.0V
ID Drain-to-Source Current (A)
60
40
40
20
BOTTOM
20
20µs PULSE WIDTH
Tj = 25°C
0
20µs PULSE WIDTH
Tj = 25°C
0
0.0
0.4
0.8
1.2
1.6
2.0
VSD Source-to-Drain Voltage (V)
0.0
0.4
0.8
1.2
1.6
2.0
VSD Source-to-Drain Voltage (V)
Fig. 7.
Typical Reverse Output Characteristics
80
TOP
VGS
7.5V
4.5V
3.5V
2.5V
2.0V
1.5V
1.0V
0.0V
Fig. 8.
Typical Reverse Output Characteristics
80
VGS
7.5V
4.5V
3.5V
2.5V
2.0V
1.5V
1.0V
BOTTOM
0.0V
TOP
ID Drain-to-Source Current (A)
60
ID Drain-to-Source Current (A)
60
BOTTOM
40
40
20
20µs PULSE WIDTH
Tj = 150°C
0
0.0
0.4
0.8
1.2
1.6
2.0
20
20µs PULSE WIDTH
Tj = 150°C
0
0.0
0.4
0.8
1.2
1.6
2.0
VSD Source-to-Drain Voltage (V)
VSD Source-to-Drain Voltage (V)
Fig. 9.
Typical Reverse Output Characteristics
100.0
Fig. 10.
Typical Reverse Output Characteristics
100.0
ISD, Reverse Drain Current (A)
T J = 150°C
10.0
ISD, Reverse Drain Current (A)
10.0
TJ = 150°C
1.0
TJ = 25°C
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
VSD, Source-toDrain Voltage (V)
1.0
TJ = 25°C
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
VSD, Source-toDrain Voltage (V)
Fig 11.
Typical Source-Drain Diode Forward Voltage
Fig 12.
Typical Source-Drain Diode Forward Voltage
4
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Typical Characteristics
Q1 - Control FET
2500
VGS = 0V,
f = 1 MHZ
C iss
= C gs + C gd , C ds
SHORTED
Crss
Coss
=C
gd
= Cds + Cgd
IRF7335D1
VGS = 0V,
f = 1 MHZ
C iss
= C gs + Cgd ,
SHORTED
Crss = C gd
Coss = Cds + Cgd
Q2 - Synchronous FET & Schottky
4000
3500
3000
C ds
2000
C, Capacitance (pF)
C, Capacitance (pF)
1500
Ciss
2500
Ciss
2000
1500
1000
1000
500
Coss
Crss
0
1
10
100
500
0
1
Coss
Crss
10
100
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 13.
Typical Capacitance Vs.Drain-to-Source Voltage
12
ID= 8.0A
VGS , Gate-to-Source Voltage (V)
Fig 14.
Typical Capacitance Vs.Drain-to-Source Voltage
12
I D= 8.0A
VDS = 24V
VDS= 15V
VGS , Gate-to-Source Voltage (V)
20
25
30
10
8
6
4
2
0
0
5
VDS = 24V
VDS= 15V
10
8
6
4
2
0
10
15
0
5
10
15
20
25
30
Q G Total Gate Charge (nC)
Q G Total Gate Charge (nC)
Fig. 15.
Gate-to-Source Voltage vs Typical Gate Charge
1000
OPERATION IN THIS AREA
LIMITED BY RDS (on)
Fig. 16.
Gate-to-Source Voltage vs Typical Gate Charge
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
I D, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
10
100µsec
1msec
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1.0
10.0
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1.0
10.0
10msec
100.0
1000.0
100.0
1000.0
VDS , Drain-toSource Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 17.
Maximum Safe Operating Area
Fig 18.
Maximum Safe Operating Area
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