PD - 95858A
IRF8915
HEXFET
®
Power MOSFET
Applications
Dual SO-8 MOSFET for POL
converters in desktop, servers,
graphics cards, game consoles
and set-top box
V
DSS
20V
18.3m
:
@V
GS
= 10V
R
DS(on)
max
I
D
8.9A
S1
G1
1
2
8
7
D1
D1
D2
D2
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
l
Fully Characterized Avalanche Voltage
and Current
S2
G2
3
4
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
20
± 20
8.9
7.1
71
2.0
1.3
0.016
-55 to + 150
Units
V
c
A
W
W/°C
°C
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
42
62.5
Units
°C/W
f
Notes
through
are on page 10
www.irf.com
1
07/09/08
IRF8915
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
20
–––
–––
–––
1.7
–––
–––
–––
–––
–––
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.015
14.6
21.6
–––
-4.8
–––
–––
–––
–––
–––
4.9
1.8
0.61
1.7
0.79
2.3
2.7
6.0
12
7.1
3.6
540
180
91
–––
–––
18.3
27
2.5
–––
1.0
150
100
-100
–––
7.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
nC
ns
nC
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 8.9A
V
V
GS
= 4.5V, I
D
V
DS
= V
GS
, I
D
= 250µA
e
= 7.1A
e
mV/°C
µA V
DS
= 16V, V
GS
= 0V
nA
S
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 7.1A
V
DS
= 10V
V
GS
= 4.5V
I
D
= 7.1A
See Fig. 6
V
DS
= 10V, V
GS
= 0V
V
DD
= 4.5V, V
GS
= 4.5V
I
D
= 7.1A
Clamped Inductive Load
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
Max.
15
7.1
Units
mJ
A
Avalanche Characteristics
E
AS
I
AR
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
13
3.5
2.5
A
71
1.0
19
5.2
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= 7.1A, V
GS
= 0V
T
J
= 25°C, I
F
= 7.1A, V
DD
= 10V
di/dt = 100A/µs
e
e
2
www.irf.com
IRF8915
100
TOP
VGS
10V
8.0V
5.5V
4.5V
3.5V
3.0V
2.8V
2.5V
100
TOP
VGS
10V
8.0V
5.5V
4.5V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
10
BOTTOM
1
BOTTOM
0.1
2.5V
0.01
1
2.5V
≤
60µs PULSE WIDTH
Tj = 25°C
0.001
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
0.1
0.1
1
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.5
ID, Drain-to-Source Current
(Α)
ID = 8.9A
VGS = 10V
10
T J = 150°C
T J = 25°C
1.0
1
VDS = 10V
≤60µs
PULSE WIDTH
0.1
1
2
3
4
5
6
7
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
www.irf.com
3
IRF8915
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
6.0
ID= 7.1A
VGS, Gate-to-Source Voltage (V)
5.0
4.0
3.0
2.0
1.0
0.0
VDS= 16V
VDS= 10V
C, Capacitance(pF)
1000
Ciss
Coss
100
Crss
10
1
10
100
0
1
2
3
4
5
6
7
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10.00
TJ = 150°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1msec
1.00
T J = 25°C
1
T A = 25°C
10msec
0.10
0.2
0.4
0.6
0.8
1.0
1.2
VGS = 0V
1.4
1.6
Tj = 150°C
Single Pulse
0.1
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF8915
9
3.0
7
ID, Drain Current (A)
VGS(th) Gate threshold Voltage (V)
8
2.5
6
5
4
3
2
1
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
2.0
ID = 250µA
1.5
1.0
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Threshold Voltage vs. Temperature
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
1
τ
2
τ
3
τ
4
τ
4
Ri (°C/W)
3.68799
2.18971
34.7298
21.8971
P
DM
t
1
τi
(sec)
0.000349
0.005246
0.470610
13.52000
1
0.02
0.01
Ci=
τi/Ri
Ci i/Ri
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D =
t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
t
2
+T
A
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
