电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

JANKC1N4570A

产品描述Zener Diode, 6.4V V(Z), 5%, Silicon,
产品类别二极管   
文件大小262KB,共2页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 全文预览

JANKC1N4570A概述

Zener Diode, 6.4V V(Z), 5%, Silicon,

JANKC1N4570A规格参数

参数名称属性值
厂商名称Microsemi
包装说明S-XUUC-N3
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JESD-30 代码S-XUUC-N3
JESD-609代码e0
元件数量1
端子数量3
封装主体材料UNSPECIFIED
封装形状SQUARE
封装形式UNCASED CHIP
认证状态Not Qualified
参考标准MIL-19500/452
标称参考电压6.4 V
表面贴装YES
技术ZENER
端子面层TIN LEAD
端子形式NO LEAD
端子位置UPPER
电压温度Coeff-Max0.64 mV/°C
最大电压容差5%
Base Number Matches1

文档预览

下载PDF文档
• 1N4565A THRU 1N4584A AVAILABLE IN
JANHC AND JANKC
PER MIL-PRF-19500/452
• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
• 6.4 VOLT ZENER VOLTAGE + 5%
• ELECTRICALLY EQUIVALENT TO 1N4565 THRU 1N4584A
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER RELOW
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
CD4565
thru
CD4584A
REVERSE LEAKAGE CURRENT
l
R
= 2
µ
A @ 25°C & V
R
= 3 Vdc
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise speci½ed.
ZENER
TEST
CURRENT
l ZT
EFFECTIVE
TEMPERATURE
COEFFICIENT
VOLTAGE
TEMPERATURE
STABILITY
³VZT MAX
-55° to + 100°
(Note 2)
mV
48
100
24
50
10
20
5
10
2.5
5
48
100
24
50
10
20
5
10
2.5
5
48
100
24
50
10
20
5
10
2.5
5
48
100
24
50
10
20
5
10
2.5
5
TEMPERATURE
RANGE
MAXIMUM
ZENER
IMPEDANCE
ZZT
(Note 1)
°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
0 to + 75°C
-55 to + 100°C
OHMS
200
200
200
200
200
200
200
200
200
200
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
50
50
50
50
25
25
25
25
25
25
25
25
25
25
22 MILS
TYPE
NUMBER
6.4V + 5%
mA
CD4565
CD4565A
CD4566
CD4566A
CD4567
CD4567A
CD4568
CD4568A
CD4569
CD4569A
CD4570
CD4570A
CD4571
CD4571A
CD4572
CD4572A
CD4573
CD4573A
CD4574
CD4574A
CD4575
CD4575A
CD4576
CD4576A
CD4577
CD4577A
CD4578
CD4578A
CD4579
CD4579A
CD4580
CD4580A
CD4581
CD4581A
CD4582
CD4582A
CD4583
CD4583A
CD4584
CD4584A
.5
.5
.5
.5
.5
.5
.5
.5
.5
.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
%/°C
.01
.01
.005
.005
.002
.002
.001
.001
.0005
.0005
.01
.01
.005
.005
.002
.002
.001
.001
.0005
.0005
.01
.01
.005
.005
.002
.002
.001
.001
.0005
.0005
.01
.01
.005
.005
.002
.002
.001
.001
.0005
.0005
Backside is not cathode and
must be electrically isolated.
T = Metallization Test Pad
DESIGN DATA
METALLIZATION:
Top: C (Cathode) ..................Al
A (Anode) ..................... Al
Back: .......................................Au
AL THICKNESS.........25,000
Å
Min
GOLD THICKNESS......4,000
Å
Min
CHIP THICKNESS.
..............10 Mils
CIRCUIT LAYOUT DATA:
Backside must be electrically
isolated.
Backside is not cathode.
For Zener operation cathode must
be operated positive with respect
to anode.
TOLERANCES:
ALL
Dimensions + 2 mils
.
NOTE 1
Zener impedance is derived by superimposing on l ZT A 60Hz rms a.c. current
equal to 10% of l ZT.
NOTE 2
The maximum allowable change observed over the entire temperature range
i.e.,the diode voltage will not exceed the speci½ed mV at any discrete
temperature between the established limits, per JEDEC standard No.5.
6 LAKE STREET, LAWRENCE,
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
M A S S A C H U S E T T S 01841
FAX (978) 689-0803
193
大家快帮忙看看我的程序,迷茫中....
是个读一个.txt文件内容的问题,其中strtxt是文件名字(***.txt)的变量。 代码如下: void ReadTxt::OnOK() { // TODO: Add extra validation here //---------------createfile打开, ......
lianxiangke 嵌入式系统
职场应声虫:唯唯诺诺不讨喜
  说一声“No”有多难?在越来越强调“团队合作精神”的今天,对一些职场中人而言,“拒绝”的确不是一件简单的事,他们凡事完全放弃自己的看法,“Yes”是他们的口头禅,渐渐地便成为他人眼 ......
ESD技术咨询 工作这点儿事
IGBT 过压或过流后的状态?
IGBT过压击穿或过流后,IGBT处于开路还是短路?...
eeleader 工业自动化与控制
FLASH模拟EEPROM实验
FLASH模拟EEPROM实验 ...
ElEVEN7 stm32/stm8
请问一下高手:evc的程序在PDA出现这个对话框怎么回事?谢谢
D:\ 对话框里面写着: CE Platform POCKET PC 2003 don't match remote OS version 502.continue?...
wajwaj 嵌入式系统
GSM/WCDMA双模多频手机的RF设计[多图]
移动电话正演变成为一种面向数据的设备,彩色屏幕、数字相机和板上内存等功能也逐渐成为主流,用来支持各种面向数据的应用,包括多媒体消息、移动游戏、上网、收发邮件和移动商务。为推动此发展 ......
JasonYoo 无线连接

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 107  1317  884  1293  1347  22  52  25  55  35 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved