CMLDM8120
CMLDM8120G*
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices
are enhancement-mode P-Channel MOSFETs,
manufactured by the P-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. This MOSFET offers low rDS(on) and low
theshold voltage.
MARKING CODES:
CMLDM8120:
C81
CMLDM8120G*: C8G
SOT-563 CASE
*
Device is
Halogen Free
by design
FEATURES:
•
•
•
•
Low rDS(on)
Low Threshold Voltage
Logic Level Compatible
Small SOT-563 package
UNITS
V
V
mA
mA
mA
A
A
mW
mW
mW
°C
°C/W
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current, t≤5.0s
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current, tp=10μs
Maximum Pulsed Source Current, tp=10μs
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
ID
IS
IDM
ISM
PD
PD
PD
TJ, Tstg
Θ
JA
20
8.0
860
950
360
4.0
4.0
350
300
150
-65 to +150
357
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=8.0V, VDS=0
1.0
IDSS
VDS=20V, VGS=0
5.0
BVDSS
VGS=0, ID=250μA
20
24
VGS(th)
VDS=VGS, ID=250μA
0.45
0.76
VSD
VGS=0V, IS=360mA
rDS(ON)
VGS=4.5V, ID=0.95A
0.085
rDS(ON)
VGS=4.5V, ID=0.77A
0.085
rDS(ON)
VGS=2.5V, ID=0.67A
0.13
rDS(ON)
VGS=1.8V, ID=0.2A
0.19
gFS
VDS=10V, ID=0.81A
2.0
Crss
VDS=16V, VGS=0, f=1.0MHz
80
Ciss
VDS=16V, VGS=0, f=1.0MHz
200
Coss
VDS=16V, VGS=0, f=1.0MHz
60
Notes:
1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm
2
2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm
2
3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm
2
MAX
50
500
1.0
0.9
0.15
0.142
0.20
0.24
UNITS
nA
nA
V
V
V
Ω
Ω
Ω
Ω
S
pF
pF
pF
R7 (17-October 2018)
CMLDM8120
CMLDM8120G*
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
ELECTRICAL
SYMBOL
Qg(tot)
Qgs
Qgd
ton
toff
CHARACTERISTICS
-
Continued:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
TYP
VDS=10V, VGS=4.5V, ID=1.0A
3.56
VDS=10V, VGS=4.5V, ID=1.0A
0.36
VDS=10V, VGS=4.5V, ID=1.0A
1.52
VDD=10V, VGS=4.5V, ID=0.95A, RG=6Ω
20
VDD=10V, VGS=4.5V, ID=0.95A, RG=6Ω
25
UNITS
nC
nC
nC
ns
ns
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Drain
2) Drain
3) Gate
4) Source
5) Drain
6) Drain
MARKING CODES:
CMLDM8120: C81
CMLDM8120G*: C8G
*
Device is
Halogen Free
by design
R7 (17-October 2018)
w w w. c e n t r a l s e m i . c o m
CMLDM8120
CMLDM8120G*
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R7 (17-October 2018)
w w w. c e n t r a l s e m i . c o m
OUTSTANDING SUPPORT AND SUPERIOR SERVICES
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nd
day air)
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REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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Central Semiconductor Corp.
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Hauppauge, NY 11788 USA
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www.centralsemi.com
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