IRLH7134PbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
(@ V
GS
= 10V)
Q
g (typical)
(@T
C (Bottom)
= 25°C)
I
D
40
3.3
39
50
V
m
nC
A
PQFN 5X6 mm
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features
Low R
DS(ON)
(< 4.7m@ V
GS
= 4.5V)
Low Thermal Resistance to PCB (<1.2°C/W)
Low Profile (<0.9mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enables better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable Part Number
IRLH7134TRPbF
IRLH7134TR2PbF
Absolute Maximum Ratings
Package Type
PQFN 5mm x 6 mm
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Units
V
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C(Bottom)
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
40
± 16
26
21
134
85
50
640
3.6
104
0.029
-55 to + 150
A
W
W/°C
°C
Notes
through
are on page 9
1
2016-08-01
IRLH7134PbF
Min.
40
–––
–––
–––
1.0
–––
–––
–––
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
37
2.8
3.9
–––
-5.6
–––
–––
–––
–––
–––
39
9.0
4.5
16
9.5
20.5
23
0.6
21
75
18
13
3720
610
350
Max.
–––
–––
3.3
4.9
2.5
–––
20
250
100
-100
–––
58
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
m
V
GS
= 4.5V, I
D
= 40A
V
V
DS
= V
GS
, I
D
= 100µA
mV/°C
V
DS
= 40V, V
GS
= 0V
µA
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
nA
V
GS
= -16V
S
V
DS
= 10V, I
D
= 50A
nC
nC
ns
pF
Typ.
–––
–––
V
DS
= 20V
V
GS
= 4.5V
I
D
= 50A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
V
GS(th)
I
DSS
I
GSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs1
Pre-Vth Gate-to-Source Charge
Q
gs2
Post-Vth Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
Q
godr
Gate Charge Overdrive
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
Q
oss
Output Charge
R
G
Gate Resistance
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
V
DS
= 16V, V
GS
= 0V
V
DD
= 20V, V
GS
= 4.5V
I
D
= 50A
R
G
= 1.7
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
Max.
125
50
Units
mJ
A
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Thermal Resistance
Parameter
R
JC
(Bottom) Junction-to-Case
Junction-to-Case
R
JC
(Top)
R
JA
R
JA
(<10s)
2
Junction-to-Ambient
Junction-to-Ambient
Min.
Typ.
Max.
Units
D
Conditions
MOSFET symbol
–––
–––
50
showing the
A
integral reverse
–––
–––
640
p-n junction diode.
–––
–––
1.3
V
T
J
= 25°C, I
S
= 50A, V
GS
=0V
–––
25
38
ns T
J
= 25°C, I
F
= 50A, V
DD
= 20V
–––
74
110
nC di/dt = 400A/µs
Time is dominated by parasitic Inductance
G
S
Typ.
–––
–––
–––
–––
Max.
1.2
30
35
22
Units
°C/W
2016-08-01
1000
TOP
IRLH7134PbF
1000
VGS
15.0V
10.0V
4.50V
4.00V
3.30V
3.10V
2.90V
2.70V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
BOTTOM
100
BOTTOM
VGS
15.0V
10.0V
4.50V
4.00V
3.30V
3.10V
2.90V
2.70V
10
10
2.70V
2.70V
1
0.1
1
60µs
PULSE WIDTH
Tj = 25°C
60µs
PULSE WIDTH
Tj = 150°C
1
100
10
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
1.8
R DS(on) , Drain-to-Source On Resistance
(Normalized)
VDS = 25V
ID, Drain-to-Source Current(A)
60µs
PULSE WIDTH
100
TJ = 150°C
10
TJ = 25°C
1
1.6
1.4
1.2
1.0
0.8
0.6
ID = 50A
VGS = 10V
0.1
1
2
3
4
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= 50A
VDS = 32V
VDS = 20V
VDS= 8.0V
C, Capacitance (pF)
10000
C iss
1000
C oss
C rss
100
1
10
VDS , Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2016-08-01
1000
IRLH7134PbF
10000
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ID, Drain-to-Source Current (A)
100
TJ = 150°C
1000
100µsec
1msec
100
10
TJ = 25°C
10
Limited by Package
DC
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
10msec
0.1
100
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
140
VGS(th), Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
2.8
120
ID, Drain Current (A)
Limited By Package
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
ID = 100µA
100
80
60
40
20
0
25
50
75
100
125
150
TC, Case Temperature (°C)
ID = 250µA
ID = 1.0mA
ID = 1.0A
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Fig 10.
Threshold Voltage vs. Temperature
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.01
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
2016-08-01
)
RDS(on), Drain-to -Source On Resistance (m
IRLH7134PbF
12
500
EAS , Single Pulse Avalanche Energy (mJ)
ID = 50A
10
8
6
4
2
0
2
4
6
8
400
ID
TOP
9.5A
21A
BOTTOM 50A
300
TJ = 125°C
200
TJ = 25°C
100
10
12
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 12.
On–Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
DRIVER
VDS
L
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
0.01
I
AS
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
5
2016-08-01
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