Preliminary
Datasheet
RJK5033DPP-M0
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-state resistance
R
DS(on)
= 0.96
typ. (at I
D
= 3 A, V
GS
= 10 V, Ta = 25C)
High speed switching
R07DS0205EJ0100
Rev.1.00
Nov 29, 2010
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
Note3
I
AP
Pch
Note 2
ch-c
Tch
Tstg
Note1
Value
500
30
6
24
6
27.4
4.56
150
–55 to +150
Unit
V
V
A
A
A
W
C/W
C
C
R07DS0205EJ0100 Rev.1.00
Nov 29, 2010
Page 1 of 6
RJK5033DPP-M0
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V
(BR) DSS
I
DSS
I
GSS
V
GS (off)
R
DS (on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d (off)
t
f
V
DF
t
rr
Min
500
—
—
3.5
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.96
600
70
10
15
20
90
30
0.9
250
Max
—
1
0.1
4.5
1.3
—
—
—
—
—
—
—
1.5
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= 500 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 3 A, V
GS
= 10 V
Note 4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
V
DD
= 200 V
I
D
= 3 A
V
GS
= 10 V
Rg = 10
I
F
= 6 A, V
GS
= 0
Note 4
I
F
= 6 A, V
GS
= 0
V
DD
= 250 V
di
F
/dt = 100 A/s
Note:
4. Pulse test
R07DS0205EJ0100 Rev.1.00
Nov 29, 2010
Page 2 of 6
RJK5033DPP-M0
Preliminary
Main Characteristics
Maximum Safe Operation Area
100
12
Typical Output Characteristics
Ta = 25°C
Pulse Test
10 V
8V
7V
6.8 V
6.6 V
6.4 V
6.2 V
6V
I
D
(A)
10
=
10
0
I
D
(A)
Drain Current
PW
10
μ
s
10
8
6
4
2
0
0
1
μ
s
Drain Current
0.1
0.01
Operation in this
area is limited by
R
DS(on)
Tc = 25°C
1 shot
1
10
100
1000
V
GS
= 5.8 V
0.001
0.1
4
8
12
16
20
Drain to Source Voltage
V
DS
(V)
Drain to Source Voltage
V
DS
(V)
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Tc =
−25°C
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
12
10
8
I
D
(A)
25°C
75°C
Drain Current
6
4
2
0
0
2
4
6
8
10
1
V
GS
= 10 V
Ta = 25°C
Pulse Test
0.1
1
10
100
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
3.0
2.5
2.0
1.5
1.0
0.5
0
−25
1A
V
GS
= 10 V
Pulse Test
I
D
= 6 A
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
3A
100
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
1
10
100
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Reverse Drain Current
I
DR
(A)
R07DS0205EJ0100 Rev.1.00
Nov 29, 2010
Page 3 of 6
RJK5033DPP-M0
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
Tc = 25°C
f = 1 MHz
Preliminary
Dynamic Input Characteristics (Typical)
V
DS
(V)
I
D
= 6 A
Ta = 25°C
10000
Capacitance C (pF)
1000
Ciss
600
V
DS
V
DD
= 100 V
200 V
400 V
12
Drain to Source Voltage
100
Coss
10
Crss
1
0
400
8
200
V
DD
= 400 V
200 V
100 V
0
8
16
24
32
4
0
0
40
50
100
150
200
250
Drain to Source Voltage
V
DS
(V)
Gate Charge
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
24
5
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
I
D
= 10 mA
4
I
DR
(A)
20
16
12
8
4
0
0
Reverse Drain Current
Gate to Source Cutoff Voltage
V
GS(off)
(V)
V
GS
= 0
Ta = 25°C
Pulse Test
3
1 mA
0.1 mA
2
1
V
DS
= 10 V
0
-25
0
25
50
75
100 125 150
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V
SD
(V)
Case Temperature
Tc (°C)
R07DS0205EJ0100 Rev.1.00
Nov 29, 2010
Page 4 of 6
Gate to Source Voltage
V
GS
(V)
800
V
GS
16
RJK5033DPP-M0
Normalized Transient Thermal Impedance vs. Pulse Width
3
Normalized Transient Thermal Impedance
γ
s (t)
Preliminary
Tc = 25°C
D=1
0.5
1
0.3
0.2
0.1
0.1
0.05
0.02
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 4.56°C/W, Tc = 25°C
P
DM
D=
PW
T
0.03
PW
T
0.01
1shot pulse
0.01
10
μ
100
μ
1m
10 m
Pulse Width
100 m
PW (s)
1
10
100
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 200 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0205EJ0100 Rev.1.00
Nov 29, 2010
Page 5 of 6
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