PTFA092211EL
PTFA092211FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
220 W, 920 – 960 MHz
Description
The PTFA092211EL and PTFA092211FL are 220-watt, internally-
matched LDMOS FETs intended for EDGE and WCDMA applications
in the 920 to 960 MHz band. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA092211EL
Package H-33288-2
PTFA092211FL
Package H-34288-2
Two-carrier WCDMA Performance
V
DD
= 30 V, I
DQ
= 1.50 A, ƒ = 940 MHz, 3GPP WCDMA
signal, PAR = 6.5 dB, 5 MHz carrier spacing
40
35
-20
-25
Features
•
•
Broadband internal matching
Typical two-carrier WCDMA performance at
940 MHz, 30 V
- Average output power = 50 W
- Linear Gain = 18.0 dB
- Efficiency = 30%
- Intermodulation distortion = –37 dBc
Typical CW performance, 940 MHz, 30 V
- Output power at P–1dB = 250 W
- Gain = 17.0 dB
- Efficiency = 59%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 30 V,
220 W (CW) output power
Pb-free, RoHS-compliant and thermally-enhanced
packages
Drain Efficiency (%)
ACPR (dBc)
30
25
20
15
10
40
41
42
43
44
45
46
47
48
49
-30
•
Efficiency
-35
-40
•
ACP
-45
-50
•
•
•
Output Power, Avg. (dBm)
RF Characteristics
Two-carrier WCDMA Measurements
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1750 mA, P
OUT
= 50 W (AVG),
ƒ
1
= 937.5 MHz, ƒ
2
= 942.5 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
17.0
28.5
—
Typ
18.0
30
–34
Max
—
—
–32
Unit
dB
%
dBc
η
D
IMD
All published data at T
CASE
= 25 °C unless otherwise indicated
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02, 2009-05-27
PTFA092211EL
PTFA092211FL
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1750 mA, P
OUT
= 220 W PEP, ƒ = 940 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
—
—
—
Typ
18.0
44
–29
Max
—
—
—
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.04
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 1750 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25 °C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70 °C, 220 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
700
4.0
–40 to +150
0.25
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA092211EL V4
PTFA092211FL V4
Package Type
H-33288-2
H-34288-2
Package Description
Thermally-enhanced slotted flange,
single-ended
Thermally-enhanced earless flange,
single-ended
2 of 10
Shipping
Tray
Tray
Marking
PTFA092211EL
PTFA092211FL
Data Sheet
Rev. 02, 2009-05-27
PTFA092211EL
PTFA092211FL
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
CW Performance
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.75 A, ƒ = 940 MHz
20
19
60
50
20
19
CW Performance
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.75 A, ƒ = 940 MHz
60
T
CASE
= 25°C
T
CASE
= 90°C
Efficiency
50
40
30
Gain
18
40
30
20
Drain Efficiency (%)
18
17
16
15
14
35
40
45
50
55
17
16
15
14
35
40
45
50
55
Gain
20
10
0
Efficiency
10
0
Output Power (dBm)
Output Power (dBm)
Two-tone Broadband Performance
Gain, Efficiency & Return Loss vs. Frequency
V
DD
= 30 V, I
DQ
= 1.75 A, P
OUT
= 110 W
45
-5
19
Power Sweep, CW
V
DD
= 30 V, ƒ = 940 MHz
Efficiency (%), Gain (dB)
40
35
30
25
20
15
900 910
Efficiency
-10
Return Loss (dB)
Power Gain (dB)
-15
18
I
DQ
= 2.0 A
I
DQ
= 1.6 A
Return Loss
-20
-25
17
Gain
-30
-35
970 980
16
30
I
DQ
= 1.2 A
920 930
940 950 960
35
40
45
50
55
Frequency (MHz)
Output Power (dBm)
Data Sheet
3 of 10
Rev. 02, 2009-05-27
Drain Efficiency (%)
Gain (dB)
Gain (dB)
PTFA092211EL
PTFA092211FL
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Intermodulation Distortion vs. Output Power
V
DD
= 30 V, I
DQ
= 1.75 A, ƒ
1
= 939 MHz, ƒ
2
= 940 MHz
Six-carrier GSM Performance
V
DD
= 30 V, I
DQ
= 1.6 A, ƒ = 940 MHz,
P/AR = 7 dB
60
50
40
-20
-20
IMD (dBc)
-40
-50
-60
-70
3rd Order
5th
Drain Efficiency (%)
IMD Up
Efficiency
-30
-35
-40
30
20
10
7th
-80
40
44
48
52
56
Gain
-45
-50
0
37
39
41
43
45
47
49
Output Power, PEP (dBm)
Output Power (dBm)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
2.33 A
4.65 A
9.33 A
11.64 A
13.98 A
Normalized Bias Voltage (V)
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
0
20
40
60
80
100
Case Temperature (°C)
Data Sheet
4 of 10
Rev. 02, 2009-05-27
IMD (dBc) , ACPR (dBc)
-30
IMD Low
-25
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