PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 725 – 770 MHz
Description
The PTFA072401EL and PTFA072401FL are 240-watt LDMOS
FETs designed for use in cellular power amplifier applications in the
725 to 770 MHz frequency band. These devices feature internal I/O
matching and thermally-enhanced, open-cavity ceramic packages.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior reliability.
PTFA072401EL
Package H-33288-2
PTFA072401FL
Package H-34288-2
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.9 A, ƒ = 765 MHz
Features
•
•
Broadband internal matching
Typical two-carrier WCDMA performance at
770 MHz, 30 V
- Average output power = 40 W
- Linear Gain = 19 dB
- Efficiency = 25%
- Intermodulation distortion = –39 dBc
Typical CW performance, 770 MHz, 30 V
- Output power at P
1dB
= 240 W
- Efficiency = 58%
Integrated ESD protection
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 30 V, 240 W
(CW) output power
Thermally-enhanced packages, Pb-free and RoHS
compliant with low gold (<0.25 micron) plating
21
20
19
65
55
Drain Efficiency (%)
Gain
45
35
25
15
5
•
Gain (dB)
18
17
16
15
30
35
40
45
50
55
•
•
•
•
Efficiency
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1800 mA, P
OUT
= 40 W average, ƒ
1
= 760 MHz, ƒ
2
= 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8.1 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
hD
IMD
Min
—
—
—
Typ
19
25
–39
Max
—
—
—
Unit
dB
%
dBc
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 03, 2011-04-01
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
V
DD
= 30 V, I
DQ
= 1800 mA, P
OUT
= 220 W PEP, ƒ = 765 MHz, tone spacing = 1 MHz
Symbol
G
ps
hD
IMD
Min
18
43
—
Typ
19
45
–29
Max
—
—
–28
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
1.82
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
W
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 1800 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 240 W CW)
T
STG
R
qJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
700
4.0
–40 to +150
0.28
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA072401EL V4
PTFA072401FL V4
Package Outline
H-33288-2
H-34288-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Shipping
Tray
Tray
Data Sheet
2 of 9
Rev. 03, 2011-04-01
PTFA072401EL
PTFA072401FL
Typical Performance
(data taken in a production test fixture)
V
DD
= 30 V, I
DQ
= 1800 mA, P
O UT
= 126 W
Broadband Performance
V
DD
= 30 V, I
DQ
= 1800 mA,
ƒ = 765 MHz, tone spacing = 1 MHz
Two-tone Drive-up
50
0
-5
-10
-25
50
45
Gain (dB), Efficiency (%)
40
35
30
25
20
15
700
730
760
790
-35
-40
-45
-50
-55
-60
42
44
46
Return Loss
IM3
Efficiency
IM5
40
35
30
25
-15
-20
-25
-30
-35
Gain
IM7
48
50
52
54
56
20
15
Frequency (MHz)
Output Power, PEP (dBm)
V
DD
= 30 V, ƒ = 770 MHz
Power Sweep
Two-carrier WCDMA Performance
V
DD
= 30 V, I
DQ
= 1.9 A, ƒ = 765 MHz
21
20
I
DQ
= 2.2 A
60
50
40
30
20
10
-20
Drain Efficiency (%)
I
DQ
= 2.0 A
T
CA S E
= 25°C
T
CA S E
= 90°C
IM3
-25
-30
-35
-40
-45
Power Gain (dB)
18
17
16
15
30
35
I
DQ
= 1.8 A
I
DQ
= 1.6 A
I
DQ
= 1.4 A
ACPR
Efficiency
-50
-55
-60
0
Output Power (dBm)
40
45
50
55
30
32
34
36
38
40
42
44
46
48
50
Output Power (dBm)
Data Sheet
3 of 9
Rev. 03, 2011-04-01
ACPR (dBc)
19
Drain Efficiency (%)
Efficiency
Input Return Loss (dB)
45
Intermodulation Distortion (dBc)
-30
Confidential, Limited Internal Distribution
zed to 50 Ohms
0.
0
R
--
->
D
-
W
AV
E
LE
NGT
H
S T
OW
A
RD
G
E
NE
Z Source
Z Load
RA
T
O
G
S
W
ARD
LOA
D
-
T HS
T
O
L E
NG
Z Source
0.1
0.0
0.2
0.3
0.4
770 MHz
725 MHz
Frequency
MHz
725
736
748
759
770
R
Z Source
W
jX
–4.83
–4.64
–4.41
–4.22
–4.04
R
2.53
2.48
2.44
2.41
2.37
Z Load
W
jX
–1.54
–1.48
–1.33
–1.17
–1.11
1.64
1.55
1.46
1.42
1.36
Z Load
0.1
770 MHz
725 MHz
W
<---
A VE
0.
2
0.
45
0.
05
See next page for reference circuit information
0. 3
0.
4
0.
5
0.
6
Data Sheet
4 of 9
Rev. 03, 2011-04-01
0.
1
0
0.
7
0.5
0.
3
Broadband Circuit Impedance
0.
45
0.
5
4
72401efl
PTFA072401EL
PTFA072401FL
Z
0
= 50
W
0. 2
0.
1efl Feb. 26, 2009 3:00:22 PM
5
0. 6
0 .1
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
Reference Circuit
C1
0.001μF
R2
1.3K
R1
1.2K
QQ1
LM7805
V
DD
Q1
BCP56
C2
0.001μF
R3
2K
C3
0.001μF
R4
2K
R5
10
C4
0.1μF
R9
2K
R6
10
C5
10μF
35V
R7
5.1K
C6
4.7μF
C7
0.1μF
C8
62pF
L1
V
DD
C12
62pF
C13
2.2μF
C14
10μF
C15
0.1μF
C16
10μF
35V
5
R8
10
7
C22
3.9pF
C24
62pF
l 12
C9
62pF
J1
4
DUT
1
2
3
C10
3.9pF
C11
9.1pF
6
9
10
l 11
C23
3.9pF
L2
13
J2
8
C17
62pF
C18
2.2μF
C19
10μF
C20
0.1μF
C21
10μF
35V
Reference circuit schematic for ƒ = 770 MHz
Circuit Assembly Information
DUT
PCB
PTFA072401EL or PTFA072401FL
LTN/PTFA072401E or LTN/PTFA072401F
LDMOS Transistor
Rogers RO4350: 0.76 mm [.030"] thick,
e
r = 3.48, 1 oz. copper
Microstrip
l1
l2, l3
l4
l5
l6
l7, l8
l9
l10
(taper)
l11
(taper)
l12
l13
Electrical Characteristics
at 770 MHz
0.025
λ,
50.7
W
0.048
λ,
38.4
W
0.002
λ,
76.8
W
0.145
λ,
76.8
W
0.094
λ,
7.8
W
0.108
λ,
44.5
W
0.140
λ,
6.5
W
0.058
λ,
6.5
W
/ 29.4
W
0.004
λ,
29.4
W
/ 38.4
W
0.005
λ,
38.4
W
0.016
λ,
50.7
W
Dimensions: L x W (mm)
5.84 x 1.65
11.18 x 2.54
0.51 x 0.76
35.43 x 0.76
20.32 x 17.78
25.40 x 2.03
29.97 x 21.59
13.13 x 21.59 / 3.68
0.84 x 3.68 / 2.54
1.27 x 2.54
3.76 x 1.65
Dimensions: L x W (in.)
0.230 x 0.065
0.440 x 0.100
0.020 x 0.030
1.395 x 0.030
0.800 x 0.700
1.000 x 0.080
1.180 x 0.850
0.517 x 0.850 / 0.145
0.033 x 0.145 / 0.100
0.050 x 0.100
0.148 x 0.065
Data Sheet
5 of 9
Rev. 03, 2011-04-01
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